A grain oriented electrical steel sheet comprising a grain oriented electrical steel sheet having a surface and a forsterite film formed on the surface of the steel sheet, wherein a total area percentage of defective parts scattered on the forsterite film is less than 1.5% relative to a surface area of the forsterite film when viewed from above the surface, and methods for evaluating a grain oriented electrical steel sheet comprising a grain oriented electrical steel sheet having a surface and a forsterite film formed on the surface of the steel sheet.

A grain oriented electrical steel sheet comprising a grain oriented electrical steel sheet having a surface and a forsterite film formed on the surface of the steel sheet, wherein a total area percentage of defective parts scattered on the forsterite film is less than 1.5% relative to a surface area of the forsterite film when viewed from above the surface, and methods for evaluating a grain oriented electrical steel sheet comprising a grain oriented electrical steel sheet having a surface and a forsterite film formed on the surface of the steel sheet.

Mineral definitions each include a list of elements, each of the elements having a corresponding standard spectrum. To determine the composition of an unknown mineral sample, the acquired spectrum of the sample is sequentially decomposed into the standard spectra of the elements from the element list of each of the mineral definitions, and a similarity metric computed for each mineral definition. The unknown mineral is identified as the mineral having the best similarity metric.

A system for adaptive electron beam scanning may include an inspection sub-system configured to scan an electron beam across the surface of a sample. The inspection sub-system may include an electron beam source, a sample stage, a set of electron-optic elements, a detector assembly and a controller communicatively coupled to one or more portions of the inspection sub-system. The controller may assess one or more characteristics of one or more portions of an area of the sample for inspection and, responsive to the assessed one or more characteristics, adjust one or more scan parameters of the inspection sub-system.

Deskew for image review, such as SEM review, aligns inspection and review coordinate systems. Deskew can be automated using design files or inspection images. A controller that communicates with a review tool can align a file of the wafer, such as a design file or an inspection image, to an image of the wafer from the review tool; compare alignment sites of the file to alignment sites of the image from the review tool; and generate a deskew transform of coordinates of the alignment sites of the file and coordinates of alignment sites of the image from the review tool. The image of the wafer may not contain defects.

The disclosure provides methods and systems for identifying materials using charged particle beam systems combined with x-ray spectroscopy systems.

The invention relates to a method for inspecting a sample with an assembly comprising a scanning electron microscope (SEM) and a light microscope (LM). The assembly comprises a sample holder for holding the sample. The sample holder is arranged for inspecting the sample with both the SEM and the LM, preferably at the same time. The method comprising the steps of: capturing a LM image of the sample in its position for imaging with the SEM; determining a position and dimensions of a region of interest in or on the sample using the LM image; determining values to which the SEM parameters need to be set to image the sample at a desired resolution; and capturing a SEM image of the region of interest, preferably using the first electron beam exposure of said region of interest.

An object of the invention is to easily acquire an image of a position corresponding between each section in an imaging device that acquires an image of a plurality of sample sections. The imaging device according to the invention calculates, according to a correspondence relationship between a characteristic point and a first observation region in a first sample section, coordinates of a second observation region of a second sample section, and generates an observation image at the calculated coordinates (see FIG. 7B).

A method is provided of measuring the mass thickness of a target sample for use in electron microscopy. Reference data are obtained which is representative of the X-rays (28) generated within a reference sample (12) when a particle beam (7) is caused to impinge upon a region (14) of the reference sample (12). The region (14) is of a predetermined thickness of less than 300 nm and has a predetermined composition. The particle beam (7) is caused to impinge upon a region (18) of the target sample (16). The resulting X-rays (29) generated within the target sample (16) are monitored (27) so as to produce monitored data. Output data are then calculated based upon the monitored data and the reference data, the output data including the mass thickness of the region (18) of the target sample (16).

The invention describes a method and a device (9) for executing a method of X-ray nano-radiography and nanotomography using a scanning electron microscope (1) consisting of the focus of an electron beam (2) from an electron microscope (1) onto one point of the surface of a scanned sample (3), the emission of bremsstrahlung and fluorescent radiation (6) from the focal point of the impact of the electron beam (2), the sensing of the scanned sample (3), and recording an image of the structure of the scanned sample (3) based on the change of intensities of the bremsstrahlung and fluorescent radiation (6) by the imaging detector (7) arranged behind the sample (3).