A system and method for analyzing a three-dimensional structure of a sample includes generating a first x-ray beam having a first energy bandwidth less than 20 eV at full-width-at-half maximum and a first mean x-ray energy that is in a range of 1 eV to 1 keV higher than an absorption edge energy of a first atomic element of interest, and that is collimated to have a collimation angular range less than 7 mrad in at least one direction perpendicular to a propagation direction of the first x-ray beam; irradiating the sample with the first x-ray beam at a plurality of incidence angles relative to a substantially flat surface of the sample, the incidence angles of the plurality of incidence angles in a range of 3 mrad to 400 mrad; and simultaneously detecting a reflected portion of the first x-ray beam from the sample and detecting x-ray fluorescence x-rays and/or photoelectrons from the sample.

To facilitate a reliable detection of age-related damage or delamination on components the following is proposed: [i] within the scope of radiofrequency reflectometry, scanning a component by radiofrequency signal irradiation in the micrometer or millimeter wavelength range and by measuring at least one reflection signal, which was reflected at the component, in punctiform, one-dimensional or two-dimensional fashion for the purposes of generating at least one first radiofrequency image representation; [ii] scanning the component in direct time offset fashion with respect to the radiofrequency signal irradiation by a combination of ultrasonic signal irradiation and the radiofrequency signal irradiation in the micrometer or millimeter wavelength range and by measuring at least one further reflection signal, which was reflected at the component; and [iii] comparing the radiofrequency image representations generated based on the reflection signals, wherein determined changes in the radiofrequency image representations indicate damage or delamination on the component.

The apparatus (1) for agricultural crop analysis, comprises: a light source (2) for sending light radiation towards a crop; a plurality of sensors (21) for acquiring light radiation reflected by the crop and a plurality of filtering elements (22) adapted to enable complete passage only of light having frequencies within a predetermined passband. The filtering elements (22) have passbands that differ from each other and each filtering element (22) is functionally coupled with a respective sensor (21) in such a manner that the latter receives only light radiation that has traversed the former.

To shorten a waiting time for a belongings inspection, the present invention provides an inspection system 10 including: an electromagnetic wave transmission/reception unit 11 that irradiates an electromagnetic wave having a wavelength of equal to or more than 30 micrometers and equal to or less than one meter, and receives a reflection wave; a detection unit 12 that performs detection processing of detecting an abnormal state, based on a signal of the reflection wave; a decision unit 13 that decides, for an inspection target person from which the abnormal state is detected, whether to perform a secondary inspection at a place or perform a secondary inspection later; and a registration unit 16 that registers, in association with a result of the detection processing, identification information about the inspection target person decided that a secondary inspection is performed later.

Methods and systems for measuring structural and material characteristics of semiconductor structures based on wavelength resolved, soft x-ray reflectometry (WR-SXR) at multiple diffraction orders are presented. WR-SXR measurements are simultaneous, high throughput measurements over multiple diffraction orders with broad spectral width. The availability of wavelength resolved signal information at each of the multiple diffraction orders improves measurement accuracy and throughput. Each non-zero diffraction order includes multiple measurement points, each different measurement point associated with a different wavelength. In some embodiments, WR-SXR measurements are performed with x-ray radiation energy in a range of 10-5,000 electron volts at grazing angles of incidence in a range of 1-45 degrees. In some embodiments, the illumination beam is controlled to have relatively high divergence in one direction and relatively low divergence in a second direction, orthogonal to the first direction. In some embodiments, multiple detectors are employed, each detecting different diffraction orders.

A non-destructive testing method of analyzing a sample comprising a composite material is disclosed. The method comprises: emitting an electromagnetic signal onto the sample, the electromagnetic signal having a range of frequencies; detecting a response signal transmitted and/or reflected by the sample in response to the electromagnetic signal; processing the response signal to determine variation with frequency of a dielectric permittivity of the sample over the range of frequencies; and determining an indication of a structural characteristic of the sample from a measure of the variation with frequency of the dielectric permittivity of the sample.

A system and method for analyzing a three-dimensional structure of a sample includes generating a first x-ray beam having a first energy bandwidth less than 20 eV at full-width-at-half maximum and a first mean x-ray energy that is in a range of 1 eV to 1 keV higher than an absorption edge energy of a first atomic element of interest, and that is collimated to have a collimation angular range less than 7 mrad in at least one direction perpendicular to a propagation direction of the first x-ray beam; irradiating the sample with the first x-ray beam at a plurality of incidence angles relative to a substantially flat surface of the sample, the incidence angles of the plurality of incidence angles in a range of 3 mrad to 400 mrad; and simultaneously detecting a reflected portion of the first x-ray beam from the sample and detecting x-ray fluorescence x-rays and/or photoelectrons from the sample.

A method of detecting an anomaly in a crystallographic structure, the method comprising: illuminating the structure with x-ray radiation in a known direction relative to the crystallographic orientation; positioning the structure such that its crystallographic orientation is known; detecting a pattern of the diffracted x-ray radiation transmitted through the structure; generating the simulated pattern based on the known direction relative to the crystallographic orientation; comparing the detected pattern to a simulated pattern for x-ray radiation illuminating in the known direction; and, detecting the anomaly in the crystallographic structure based on the comparison.

A thin film analyzing device includes a processing and analyzing chamber for performing processing and analyzing of a subject having a thin film on a substrate. The processing and analyzing chamber includes a sample holder arranged to hold the subject, an X-ray irradiation source arranged to irradiate the subject with X-rays, a fluorescent X-ray detector configured to detect fluorescent X-rays which are emitted from the subject, a diffracted/reflected X-ray detector configured to detect reflected X-rays and diffracted X-rays which are emitted from the subject, and a substrate remover arranged to remove the substrate.

A defect inspection device, a defect inspection method, and a computer readable medium accurately and rapidly detect a minute defect and a defect candidate indicated by a signal in a received light image of an inspection object. A defect inspection device includes an image acquisition unit, an input unit, an exposure condition acquisition unit, memory, and a parameter determination unit that determines an image processing parameter for a received light image based on an exposure condition acquired by the exposure condition acquisition unit, a physical feature received by the input unit, and exposure information stored in memory, and an image processing unit extracts a defect candidate image which corresponds to a defect candidate of the inspection object from the received light image by performing image processing of the received light image based on the image processing parameter determined by the parameter determination unit.