A state change tracking device includes: a hardware processor that non-destructively tracks a state change of an inspection target by a plurality of reconstructed images acquired by imaging the inspection target placed under a specific environment by an X-ray Talbot imaging device over time.

Methods and systems for performing measurements of semiconductor structures based on high-brightness, polychromatic, reflective small angle x-ray scatterometry (RSAXS) metrology are presented herein. RSAXS measurements are performed over a range of wavelengths, angles of incidence, and azimuth angles with small illumination beam spot size, simultaneously or sequentially. In some embodiments, RSAXS measurements are performed with x-ray radiation in the soft x-ray (SXR) region at grazing angles of incidence in the range of 5-20 degrees. In some embodiments, the x-ray illumination source size is 10 micrometers or less, and focusing optics project the source area onto a wafer with a demagnification factor of 0.2 or less, enabling an incident x-ray illumination spot size of less than two micrometers. In another aspect, active focusing optics project programmed ranges of illumination wavelengths, angles of incidence, and azimuth angles, or any combination thereof, onto a metrology area, either simultaneously or sequentially.

Methods and systems for improved monitoring of tool drift and tool-to-tool matching across large fleets of measurement systems employed to measure semiconductor structures are presented herein. One or more Quality Control (QC) wafers are measured by each of a fleet of measurement systems. Values of system variables are extracted from the QC measurement data associated with each measurement system using a trained QC encoder. The extracted values of the system variables are employed to condition the corresponding measurement model employed by each measurement tool to characterize structures under measurement having unknown values of one or more parameters of interest. Accurate tool-to-tool matching across a fleet of conditioned measurement systems is achieved by extracting values of system variables from measurement data collected from the same set of QC wafers. Tool health is monitored based on changes in values of system variables extracted from measurements performed at different times.

The present disclosure introduces methods for characterizing iron core carbohydrate colloid drug products, such as iron sucrose drug products. Disclosed methods enable the characterization of the iron core size of the iron core nanoparticles in iron carbohydrates as they exist in the formulation in solution, such as e.g. iron sucrose drug products, and more particularly, the average particle diameter size and size distribution(s) of the iron core nanoparticles. The disclosed methods apply small-angle X-ray scattering (SAXS) in parallel beam transmission geometry, with a sample mounted inside a capillary and centered in the X-ray beam, to iron carbohydrates, such as iron sucrose, in solution without the need to modify the sample, such as to remove unbound carbohydrates, dilute, or dry the sample, to accurately characterize the average iron core particle diameter size of the iron core nanoparticles. An example application of the disclosed method is to perform SAXS measurements under identical instrument settings on two samples of the same type of iron core nanoparticle colloid drug product for the purpose of comparing their iron core structures. Such comparisons are typically performed during the iron core carbohydrate colloid drug development process, and can include comparisons of samples that have been manipulated.

Methods and systems for realizing a high radiance x-ray source based on a high density electron emitter array are presented herein. The high radiance x-ray source is suitable for high throughput x-ray metrology and inspection in a semiconductor fabrication environment. The high radiance X-ray source includes an array of electron emitters that generate a large electron current focused over a small anode area to generate high radiance X-ray illumination light. In some embodiments, electron current density across the surface of the electron emitter array is at least 0.01 Amperes/mm.sup.2, the electron current is focused onto an anode area with a dimension of maximum extent less than 100 micrometers, and the spacing between emitters is less than 5 micrometers. In another aspect, emitted electrons are accelerated from the array to the anode with a landing energy less than four times the energy of a desired X-ray emission line.

A detection scheme for x-ray small angle scattering is described. An x-ray small angle scattering apparatus may include a first grating and a complementary second grating. The first grating includes a plurality of first grating cells. The complementary second grating includes a plurality of second grating cells. The second grating is positioned relative to the first grating. A configuration of the first grating, a configuration of the second grating and the relative positioning of the grating are configured to pass one or more small angle scattered photons and to block one or more Compton scattered photons and one or more main x-ray photons.

A single-piece hybrid droplet generator and nozzle component for serial crystallography. The single-piece hybrid droplet generator component including an internally-formed droplet-generation channel, an internally-formed sample channel, a nozzle, and a pair of electrode chambers. The droplet-generation channel extends from a first fluid inlet opening to the nozzle. The sample channel extends from a second fluid inlet opening to the droplet-generation channel and joins the droplet-generation channel at a junction. The nozzle is configured to eject a stream of segmented aqueous droplets in a carrier fluid from the droplet-generation channel through a nozzle opening of the single-piece component. The pair of electrode chambers are positioned adjacent to the droplet-generation channel near the junction between the droplet-generation channel and the sample channel. The timing of sample droplets in the stream of fluid ejected through the nozzle is controlled by applying a triggering signal to electrodes positioned in the electrode chambers of the single-piece component.

A method for X-ray measurement includes generating and directing an X-ray beam to a sample including at least first and second layers stacked on one another, the X-ray beam incident on a sample location at which the first and second layers include respective first and second high aspect ratio (HAR) structures. X-ray scatter profiles are measured, that are emitted from the sample location in response to the X-ray beam as a function of tilt angle between the sample and the X-ray beam. A shift is estimated, between the first and second layers and a characteristic tilt of the first and second layers, based on the X-ray scatter profiles measured as a function of the tilt angle.

A method for X-Ray Scattering material analysis, in particular Small Angle X-ray Scattering material analysis for generating and directing an incident X-ray beam along a propagation direction to a sample held in a sample environment executing a sample measurement process. An apparatus adapted to carry out such a method is also disclosed.

According to one embodiment, there is provided an inspection device including a measurement unit and a controller. The measurement unit measures a physical quantity in accordance with a predetermined pattern for a sample with the predetermined pattern, and generates a first spectral pattern in accordance with a measurement result. The controller predicts a processed cross-sectional shape by applying a parameter to a shape function indicating an ion flux amount in accordance with an etching depth in a case where the predetermined pattern is processed in dry etching processing, determines a second spectral pattern in accordance with the processed cross-sectional shape that has been predicted, adjusts the parameter while comparing the first spectral pattern with the second spectral pattern, and reconstructs the processed cross-sectional shape of the sample in accordance with an adjustment result.