There is provided a control apparatus 40 that controls a tilt of a sample, the control apparatus comprising an input section 41 that receives an input of inclination information representing inclination of the sample with respect to a ϕ axis; an adjustment amount determination section 43 that determines adjustment amounts of a ω value and a χ value for correcting a deviation amount between a scattering vector and a normal line to a sample surface or a lattice plane with respect to a ϕ value that varies, using the inclination information; and a drive instruction section 47 that drives a goniometer according to ϕ axis rotation of the sample, based on the determined adjustment amounts of the ω value and the χ value, during an X-ray diffraction measurement.

A method may include: analyzing each of a group of inorganic particles to generate data about physicochemical properties of each of the inorganic particles; and generating a correlation between a reactivity index of each of the inorganic particles and the data.

A diffraction apparatus and a method for non-destructively testing internal crystal orientation uniformity of a workpiece are provided. The apparatus includes: an X-ray irradiation system for irradiating an X-ray to a measured part of a sample under testing, and an X-ray detection system for simultaneously detecting a plurality of diffracted X-rays formed by diffraction of a plurality of parts of the sample under testing, to measure an X-ray diffraction intensity distribution of the sample under testing, where the detected diffracted X-rays are short-wavelength characteristic X-rays, and the X-ray detection system is an array detection system. By the apparatus and the method, the detection efficiency is greatly improved.

A ball-mapping system connectable to an X-ray diffraction apparatus, for collecting X-ray diffraction data at measurement points located on a ball-shaped sample is provided. The ball-mapping system includes a sample stage, including a sample-contacting surface and a guide assembly cooperating with the sample-contacting surface for guiding the sample-contacting surface along a first axis and along a second axis unparallel to the first axis. The ball-mapping system includes a sample holder for keeping the ball-shaped sample in contact with the sample stage and a motor assembly in driving engagement with the guide assembly, the motor assembly driving the sample-contacting surface in translational movement along the first axis and the second axis, the translational movement of the sample-contacting surface causing the ball-shaped sample to rotate, on the sample-contacting surface along the first axis and the second axis. A method for mapping the ball-shaped sample is also provided.

There is provided an X-ray measurement apparatus (X-ray diffractometer 2) constituting a measurement system of X-ray analysis from a plurality of components, the X-ray measurement apparatus comprising an apparatus body directly or indirectly attaching each of target components and each of non-target components; each of the target components (selection slit 41) to be attached, the type of the attached target component being recognized by the apparatus body, and each of the non-target components to be attached, the type of the attached non-target component not being recognized by the apparatus body a measurement category; and an indicator (indicator 41a for the selection slit) that indicates whether attachment of each of the target components is appropriate for a measurement category.

A mounting system and a sample holder for an X-ray diffraction (XRD) apparatus are provided. The mounting system includes a mounting bracket, an attachment module and a biasing assembly. The mounting bracket is mountable to the XRD apparatus and is rotatable about a rotation axis. The mounting bracket includes an abutment structure defining a reference position. The attachment module is mountable onto the mounting bracket at an adjustable attaching position with respect to the reference position. The attachment module comprises an attaching element that is engageable with the abutment structure for abutting the mounting bracket proximate the reference position. The biasing assembly is mounted onto one of the mounting bracket or the attachment module for interlocking the mounting bracket with the attachment module, such that the mounting bracket is blocked in a plane substantially parallel to the rotation axis, thereby allowing the attaching position to be aligned with the rotation axis.

An X-ray inspection device of the present invention includes a sample placement unit 11 for placing a sample as an inspection target therein, a sample placement unit positioning mechanism 30 for moving the sample placement unit 11, a goniometer 20 including first and second rotation members 22, 23 that rotate independently of each other, an X-ray irradiation unit 40 installed on the first rotation member 22, and a two-dimensional X-ray detector 50 installed on the second rotation member 23. The sample placement unit positioning mechanism 30 includes a rotation mechanism 35 for rotating the sample placement unit 11 and a -axis about a -axis that is orthogonal to a s-axis and a d-axis at a measurement point P and extends horizontally.

A sample holder (10) filled with a sample is held in a base member (20), and an airtight member (30) is mounted on the base member (20) so as to cover the surroundings of the sample holder (10), thereby forming a sample holding structure in a closed space. The airtight member (30) includes a fitting portion (35) which is configured to be fitted and mounted in a mounting portion (21).

An X-ray diffraction method measures crystallite size distribution in a polycrystalline sample using an X-ray diffractometer with a two-dimensional detector. The diffraction pattern collected contains several spotty diffraction rings. The spottiness of the diffraction rings is related to the size, size distribution and orientation distribution of the crystallites as well as the diffractometer condition. The invention allows obtaining of the diffraction intensities of all measured crystallites at perfect Bragg condition so that the crystallite size distribution can be measured based on the 2D diffraction patterns.

A material analysis method is provided. A plurality of wafers processed from a plurality of ingots are measured by a measuring instrument to obtain an average of a bow of each of the wafers processed from the ingots and a plurality of full widths at half maximum (FWHM) of each of the wafers. Key factors respectively corresponding to the ingots are calculated according to the FWHM of the wafers. A regression equation is obtained according to the key factors and the average of the bows.