The present disclosure concerns an electron microscopy method, including the emission of a precessing electron beam and the acquisition, at least partly simultaneous, of an electron diffraction pattern and of intensity values of X rays.

A system for high-resolution high-contrast x-ray ghost diffraction comprises: A) a laboratory x-ray source configured to provide an input beam; B) a diffuser configured to induce intensity fluctuations in the input beam; C) a beam splitter configured to split the input beam into: i) a test arm comprising an object and a single-pixel detector; and ii) a reference arm comprising one of: (a) a multi-pixel detector and (b) a single-pixel detector and an aperture or a scanning slit configured to simulate a one or two dimensional multi-pixel detector; and D) a processor configured to receive output intensity measurements of the detectors in the test arm and the reference arm, to record the output intensity measurements at different rotational positions of the rotating diffuser, to correlate the output intensity measurements, and to use the correlated output measurements to reconstruct a diffraction pattern of the object; wherein the object is placed as close as possible to the beam splitter and the detectors in the test arm and the reference arm are equidistant from the beam splitter.

Estimating wear on bottom hole assembly (BHA) components utilizes a rock hardness index using analysis of drill cutting. Estimating the amount of wear on borehole assembly components comprises measuring the rock properties in drilled cuttings from a borehole. A hardness value is assigned to each mineral present in the drilled cuttings. A hardness index is calculated for a drilled borehole interval. A wear resistance factor is assigned to each BHA component of the BHA. The wear resistance factor depends on the wear resistance of each BHA component. A wear value for each BHA component is calculated based on the hardness index for the drilled borehole interval, the wear resistance of the BHA component, and drilling parameters.

The present invention is a method for measuring a residual stress in a cast and forged steel product, the method using X-rays, including: irradiating a cast and forged steel product with X-rays; two-dimensionally detecting intensities of diffracted X-rays originating from the X-rays; and calculating a residual stress based on a diffraction ring formed by an intensity distribution of the diffracted X-rays detected in the detecting, wherein, when the residual stress is measured for each of a plurality of measurement positions of the cast and forged steel product, the residual stress for each of the measurement positions is calculated in the calculating based on the diffraction ring for each of the measurement positions and an X-ray elastic constant which varies for each of the measurement positions.

Various aspects include methods and devices for reducing the scanning time for an X-ray diffraction scanner system by increasing the count rate or efficiency of the energy discriminating X-ray detector. In a first embodiment, the count rate of the energy discriminating X-ray detector is increased by increasing the number of detectors counting X-ray scatter photon in particular energy bins by configuring individual pixel detectors within a 2-D X-ray detector array to count photons within specific energy bins. In a second embodiment, the gain of amplifier components in the detector processing circuitry is increased in order to increase the energy resolution of the detector. In a third embodiment, the individual pixel detectors within a 2-D X-ray detector array are configured to count photons within specific energy bins and the gain of amplifier components in the detector processing circuitry is increased in order to increase the energy resolution of the detector.

A mounting system and a sample holder for an X-ray diffraction (XRD) apparatus are provided. The mounting system includes a mounting bracket, an attachment module and a biasing assembly. The mounting bracket is mountable to the XRD apparatus and is rotatable about a rotation axis. The mounting bracket includes an abutment structure defining a reference position. The attachment module is mountable onto the mounting bracket at an adjustable attaching position with respect to the reference position. The attachment module comprises an attaching element that is engageable with the abutment structure for abutting the mounting bracket proximate the reference position. The biasing assembly is mounted onto one of the mounting bracket or the attachment module for interlocking the mounting bracket with the attachment module, such that the mounting bracket is blocked in a plane substantially parallel to the rotation axis, thereby allowing the attaching position to be aligned with the rotation axis.

A method for testing salt formation includes heating, by a first heater of an apparatus, an anion solution arranged in a first vessel of the apparatus to a first predetermined temperature and heating, by a second heater of the apparatus, a cation solution arranged in a second vessel of the apparatus to a second predetermined temperature. The method also includes conveying, by a fluid pump of the apparatus, a volume of the anion solution from the first vessel to the second vessel and simultaneously rotating a stirrer arranged in the second vessel to form a mixed solution. The method includes conveying the mixed solution from the second vessel of the apparatus to a sampler of the apparatus.

Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy. The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering. In other aspects, model based measurements are performed based on the zero diffraction order beam, and measurement performance of the full beam x-ray scatterometry system is estimated and controlled based on properties of the measured zero order beam.

An X-ray analysis apparatus and method. The apparatus comprises an adjustable slit (210) between an X-ray source (4) and a sample (6); and optionally a further slit (220, 220a). A controller (17) is configured to control a width of the adjustable slit, between a first width, a larger second width, and an even larger third width. At the first and second widths: the adjustable slit (210) limits the divergence of the incident beam and thereby limits an area of the sample that is irradiated; and the further slit (220) does not limit the divergence of the incident beam. At the third width: the adjustable slit (210) does not limit the divergence of the incident beam, and the further slit (220) limits the divergence of the incident beam and thereby limits the area of the sample that is irradiated. Alternatively, at the third width, the adjustable slit (210) continues to limit the area irradiated.

Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy. The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering. In other aspects, model based measurements are performed based on the zero diffraction order beam, and measurement performance of the full beam x-ray scatterometry system is estimated and controlled based on properties of the measured zero order beam.