Patent classifications
G01N2223/071
METHOD FOR TEMPERATURE MONITORING IN CRYO-ELECTRON MICROSCOPY
Temperatures of cryo-electron microscopy samples are assessed based on images portions associated with high temperature superconductor (HTSC) areas or other thermal sensor materials that are thermally coupled to or thermally proximate the samples. Such thermal areas can be provided on sample mounts such as metallic grids, carbon films, or on sample stages. In examples using HTSCs, HTSCs having critical temperatures between −175° C. and −135° C. are typically used.
METHOD FOR IMPROVING TRANSMISSION KIKUCHI DIFFRACTION PATTERN
The present invention refers to a method for improving a Transmission Kikuchi Diffraction, TKD pattern, wherein the method comprises the steps of: Detecting a TKD pattern (20b) of a sample (12) in an electron microscope (60) comprising at least one active electron lens (61) focussing an electron beam (80) in z-direction on a sample (12) positioned in distance D below the electron lens (61), the detected TKD (20b) pattern comprising a plurality of image points x.sub.D, y.sub.D and mapping each of the detected image points x.sub.D, y.sub.D to an image point of an improved TKD pattern (20a) with the coordinates x.sub.0, y.sub.0 by using and inverting generalized terms of the form x.sub.D=γ*A+(1−γ)*B and y.sub.D=γ*C+(1−γ)*D wherein
INSPECTION SYSTEM AND METHOD
An inspection system includes one or more processors and an infrared (IR) camera operably coupled to the one or more processors. The one or more processors control a microwave transmitter to sequentially emit microwaves having different frequencies within a designated frequency range into an object during a first sweep. The IR camera generates thermal image data of the object after the object is heated by each of the different frequencies of microwaves. The one or more processors analyze the thermal image data and determine a selected frequency within the designated frequency range that provides greater heating of the object than one or more other frequencies in the designated frequency range. The one or more processors also analyze select thermal image data of the object, responsive to heating of the object by the selected frequency of microwaves, to detect an element in the object.
X-RAY REFLECTOMETRY APPARATUS AND METHOD THEREOF FOR MEASURING THREE DIMENSIONAL NANOSTRUCTURES ON FLAT SUBSTRATE
This disclosure relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this disclosure is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode of 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR for measurements of samples with limited sample area and scattering volumes.
Charged Particle Beam System and Overlay Shift Amount Measurement Method
Overlay shift amount measurement with high accuracy becomes possible. A charged particle beam system includes a computer system that measures an overlay shift amount between a first layer of a sample and a second layer lower than the first layer based on output of a detector. The computer system generates first images with respect to the first layer and second images with respect to the second layer based on the output of the detector, generates a first added image by adding the first images by a first added number of images, and generates a second added image by adding the second image by a second added number of images greater than the first added number of images. An overlay shift amount between the first layer and the second layer is measured based on the first added image and the second added image.
ELECTRON MICROSCOPY ANALYSIS METHOD
The present disclosure concerns an electron microscopy method, including the emission of a precessing electron beam and the acquisition, at least partly simultaneous, of an electron diffraction pattern and of intensity values of X rays.
Analyzing apparatus, system, analyzing method, and program
An analyzing apparatus includes a collection filter, a two-dimensional sensor, and a calculation unit. The collection filter collects fine particulate matter included in the air. The two-dimensional sensor obtains collection image data including a collection area of the collection filter in which the fine particulate matter is collected. The calculation unit calculates data relating to content of the colored particulate matter included in the collection area based on the collection image data.
System and methods for computing physical properties of materials using imaging data
A method for computing physical properties of materials, such as two-phase and three-phase relative permeabilities through a porous material, is described. The method employs single or multi-scale digital images of a representative sample which capture one or multiple fractionations of a micro-structure size cascade at the respective, required imaging resolutions. At a high resolution, the method computes basic physical properties, such as absolute permeabilities with a numerical method such as computational fluid dynamics solving the Navier-Stokes equation, and capillary pressure with simulations solving Young-Laplace equation. Saturation states of multiple fluids are combined to derive capillary pressure relationships at low resolutions when necessary. Upscaled physical properties, such as upscaled relative permeabilities corresponding to the low resolutions, are subsequently computed using the composition of multiple permeable facies at corresponding upscaled saturations determined by upscaled capillary pressure, honoring upscaled governing laws of the physical property, such as Darcy's law.
System and method to evaluate kerogen-rich shale
A system and method for evaluating kerogen-rich shale (KRS) including measuring, via scanning microscopy, electrical conductivity of a KRS sample and a mechanical property of the KRS sample.
System and Method to Evaluate Kerogen-Rich Shale
A system and method for evaluating kerogen-rich shale (KRS) including measuring, via scanning microscopy, electrical conductivity of a KRS sample and a mechanical property of the KRS sample.