The radiation detection device includes: a sample holding unit; an optical microscope configured to observe a sample held by the sample holding unit; an irradiation unit that irradiates the sample with radiation; a detection unit that detects radiation generated from the sample; an adjustment unit that adjusts a relationship between a focal position of the optical microscope and a position of the sample such that the optical microscope is focused on one portion of the sample; a change unit that changes a position, on which the optical microscope is to be focused, on the sample; an imaging unit that creates a partial image captured by the optical microscope at the changed position on the sample in a state in which the adjustment unit performs adjustment for focusing; and a sample image creation unit that creates a sample image by combining a plurality of partial images created by the imaging unit.

A method for improving the quality/integrity of an EBSD/TKD map, wherein each data point is assigned to a corresponding grid point of a sample grid and represents crystal information based on a Kikuchi pattern detected for the grid point; comprising determining a defective data point of the EBSD/TKD map and a plurality of non-defective neighboring data points, comparing the position of Kikuchi bands of a Kikuchi pattern detected for a grid point corresponding to the defective data point with the positions of bands in at least one simulated Kikuchi pattern corresponding to crystal information of the neighboring data points and assigning the defective data point the crystal information of one of the plurality of neighboring data point based on the comparison.

Methods and systems include generating, from an electron beam generator, an electron beam in a vacuum chamber. A mounting platform in the vacuum chamber is configured to support a material. The electron beam is directed at a surface region of the material at a grazing angle. A detector assembly, which may have an optical entry path positioned above the surface region, receives cathodoluminescent light emission arising from the electron beam transferring energy to the surface region. The detector assembly determines spectral characteristics of the cathodoluminescent light emission to characterize the surface region.

Apparatus include a reflector positioned adjacent to a sample location that is situated to receive a charged particle beam (CPB) along a CPB axis from a CPB focusing assembly so that the reflector is situated to receive light emitted from a sample at the sample location based on a CPB-sample interaction or a photon-sample interaction and to direct the light to a photodetector, and a steering electrode situated adjacent to the reflector so as to direct secondary charged particles emitted from the sample based on the CPB-sample interaction away from the reflector and CPB axis. Methods and systems are also disclosed.

A method of investigating a specimen using charged-particle microscopy, and a charged particle microscope configured for same. In one embodiment, the method includes: (a) selecting a virtual sampling grid on a surface of a specimen, the virtual sampling grid extending in an XY plane and comprising nodes to be impinged upon by a beam of charged particles; (b) selecting a landing energy for the beam, the landing energy associated with a penetration depth; (c) generating a scan image by irradiating the specimen at each of the nodes with the beam, and detecting output radiation emanating from the specimen in response thereto; (d) repeating steps (b) and (c) for a series of different landing energies corresponding to an associated series of penetration depths, (e) pre-selecting an energy increment by which the landing energy is to be altered after a first iteration of steps (b) and (c); (f) associating the energy increment with a corresponding depth increment; (g) selecting the virtual sampling grid to have a substantially equal node pitch p in X and Y, which pitch p is matched to the value of the depth increment so as to produce a substantially cubic sampling voxel; and (h) selecting subsequent energy values in the series of landing energies so as to maintain a substantially constant depth increment between consecutive members of the series of penetration depths.

Intensity of near-ultraviolet light or visible light of 180 to 700 nm emitted from a solid sample, such as an organic semiconductor, irradiated with an electron beam is measured, while kinetic energy (accelerating energy) of the electron beam is changed in a range of 0 to 5 eV so as to obtain a spectrum. Peaks are detected from the spectrum, and the energy thereof is defined as unoccupied-states energy of the sample. The onset energy of the first peak represents electronic affinity energy (electron affinity) of the sample. Since the energy of the electron beam irradiated onto the sample is 5 eV or less, almost no damage is exerted on the sample even when the sample is an organic semiconductor.