A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.

A process for producing x-ray photoelectron spectra of a sample comprising the steps of: producing a plurality of different oxidation states of the sample in a surface thereof by exposing the sample surface to an agent configured to change the oxidation state of said sample surface; placing the sample in an x-ray photoelectron spectroscopy apparatus; obtaining an x-ray photoelectron spectra for each of the plurality of oxidation states of the said sample surface; identifying materials within the sample by analysing the plurality of spectra.

A measurement system and method are presented for measuring one or more parameters of a sample. The measurement system comprises an excitation system and a detection system. The excitation system is configured to generate combined exciting radiation comprising one- or multi-parameter modulation of multiple exciting signals of different types to be applied to at least a portion of a sample under measurements to thereby induce electron emission response of said at least portion of the sample to said combined exciting radiation. The detection system is configured for detecting the electron emission response of the at least portion of the sample and generating measured data indicative of a modulated change of an electrical state of the at least portion of the sample, thereby enabling determination of one or more parameters of the sample from the measured data.

A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.

A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.

An X-ray photoelectron spectroscopy of the present invention equipped with a sample stage (1) having a movable range where it is possible to inspect the entire surface of a semiconductor wafer having a diameter of 300 mm or more, including an X-ray optical device (2) that is configured to include a rotating anode type X-ray source (20) and an X-ray optical system (30) as components, the X-ray optical system (30) being configured such that X-rays of a specific bandwidth from X-rays collimated by a collimating optical system (31) are extracted by a planar crystal optical system (32), and the X-rays of the specific bandwidth are focused by a focusing optical system (33) to irradiate the surface of the semiconductor wafer with the X-rays.

A measurement system includes: an excitation system; a detector; and a control unit. The excitation system includes excitation sources generating excitations of different types comprising: a high energy electromagnetic radiation source; at least one electric power supply providing a bias voltage to a sample; and at least one electron beam source generating relatively low energy e-radiation in the form of an electron beam. The excitation system includes first and second sequentially performed measurement modes, for respectively, exciting the sample by the high energy radiation to induce a first-mode secondary electron emission spectral response, and supplying initial bias voltage to the sample and exciting the sample with the e-radiation followed by a gradual variation of the bias voltage from said initial bias voltage to induce a second-mode electric current variations in the sample. The detector detects said first-mode secondary electron emission spectral response and generates first-mode measured data, and monitors the electric current through the sample and generates second-mode measured data indicative of sample current readout.

A method includes using machine learning to classify and sort energy storage devices based on at least one of the detected chemical or physical properties. In some embodiments, the method can include irradiating an energy storage device with an input radiation and detecting the output radiation reflected or backscattered by the energy storage device. The method may further include detecting a physical property of the energy storage device.