An object of the invention is to quantitatively evaluate crystal growth amount in a wide range from an undergrowth state to an overgrowth state with nondestructive inspection. By using a plenty of image feature values such as pattern brightness, a pattern area and a pattern shape which are extracted from an SEM image, and depending on whether brightness inside a pattern is lower than brightness outside the pattern (401), undergrowth and overgrowth is determined (402, 405). Based on a brightness difference or the pattern area, a growth amount index or a normality index of crystal growth in a concave pattern such as a hole pattern or a trench pattern is calculated (404, 407).

Diffraction patterns of a sample at various tilt angles are acquired by irradiating a region of interest using a first charged particle beam. Sample images are acquired by irradiating the region of interest using a second charged particle beam. The first and second charged particle beams are formed by splitting charged particles generated by a charged particle source.

Provided are processes and materials for solving biological or structural information about proteins or other organic molecules. The processes capitalize on a rigid multimeric nanocage formed from self-assembling substructure proteins. The processes and materials allow for recognition and tight, optionally covalent, bonding of any protein molecule with a tag complementary to a capture sequence on the nanocage. The processes and materials may be used to obtain biological or structural information by cryo-electron microscopy and overcome prior limitations of target protein size or salt concentration.

Provided is an X-ray analysis device and an X-ray analysis method capable of easily analyzing a valence of a target element in a sample. A controller 22 of a signal processing device of the X-ray analysis device is provided with: a storage unit 360 for storing a calibration curve generated based on a peak energy of Kα.sub.1 X-ray and a peak energy of Kα.sub.2 X-ray emitted from a metal simple substance, a peak energy of Kα.sub.1 X-ray and a peak energy of Kα.sub.2 X-ray emitted from each of two or more types of compounds each containing the metal simple substance, and a valence of the metal in each of the two or more types of compounds; a processing unit 302 configured to acquire a peak energy of Kα.sub.1 X-ray and a peak energy of Kα.sub.2 X-ray of the metal emitted from the metal contained in an unknown sample; and a calculation unit 308 configured to calculate a mean valence of the metal contained in the unknown sample by applying the obtained peak energy of Kα.sub.1 X-ray and peak energy of Kα.sub.2 X-ray to the calibration curve.

Provided is an inspection method including providing a pattern layout including measurement points, generating a first measurement map including first measurement regions that overlap the measurement points and do not overlap each other in a two-dimensional plan view, providing preliminary measurement regions on the measurement points, producing a polygon by grouping ones of the preliminary measurement regions that overlap each other in the two-dimensional plan view, providing a second measurement region on a center of the polygon, selecting the second measurement region when all of the measurement points in the polygon overlap the second measurement region in the two-dimensional plan view, generating a second measurement map including the selected second measurement region, generating a third measurement map by using the first and second measurement maps, and inspecting patterns on a semiconductor substrate by using the third measurement map. The third measurement map includes the selected second measurement region and ones of the first measurement regions that do not overlap the selected second measurement region in the two-dimensional plan view.

A data generating method includes: an atomic model generating step of generating one or more three-dimensional atomic models corresponding to a nanomaterial to be measured; a three-dimensional data generating step of generating three-dimensional atomic level structure volume data corresponding to the nanomaterial to be measured based on the one or more three-dimensional atomic model; a tilt series generating step of generating a tilt series by simulating three-dimensional tomography for a plurality of different angles in a predetermined angle range for at least some of the three-dimensional atomic level structure volume data; and a three-dimensional atomic structure tomogram volume data generating step of generating a three-dimensional atomic structure tomogram volume data set by performing three-dimensional reconstruction on at least some of the three-dimensional atomic level structure volume data based on the tilt series.

A method is carried out with the aid of a particle beam microscope which includes a particle beam column for producing a beam of charged particles, the particle beam column having an optical axis. Furthermore, the particle beam microscope includes a holding device for holding the extracted micro-sample. The method includes holding the extracted micro-sample and an adjacent hinge element via the holding device. The micro-sample adopts a first spatial orientation relative to the optical axis. The method also includes producing a bending edge in the hinge element by way of irradiation with a beam of charged particles such that the adjacent micro-sample is moved in space and the spatial orientation of the micro-sample is altered. The method further includes holding the micro-sample in a second spatial orientation relative to the optical axis, wherein the second spatial orientation differs from the first spatial orientation.

The invention relates to a method of preparing a sample for analysis. The method comprises: providing a sample comprising a surface region of interest on a first face of the sample and a second face oriented at an angle to the first face about a common edge between the first and second faces, the second face extending between the common edge and a second edge on the opposing side of the second face of the sample; and milling the second face of the sample to provide a trench in the surface of the second face, the trench extending from a first position on the second face between the common edge and the second edge to a second position adjacent to the common edge; wherein the trench is arranged so as to provide an electron transparent sample layer comprising the surface region of interest. By milling the second face of the sample only, a surface region of interest on the first face of the sample is fully preserved and remains free of milling beam induced damage. This allows for correlative characterisation work which requires both an electron transparent sample and a fully intact sample surface to obtain surface-sensitive data.

Provided is an X-ray analysis device and an X-ray analysis method capable of easily analyzing a valence of a target element in a sample. A controller 22 of a signal processing device of the X-ray analysis device is provided with: a storage unit 360 for storing a calibration curve generated based on a peak energy of Kα.sub.1 X-ray and a peak energy of Kα.sub.2 X-ray emitted from a metal simple substance, a peak energy of Kα.sub.1 X-ray and a peak energy of Kα.sub.2 X-ray emitted from each of two or more types of compounds each containing the metal simple substance, and a valence of the metal in each of the two or more types of compounds; a processing unit 302 configured to acquire a peak energy of Kα.sub.1 X-ray and a peak energy of Kα.sub.2 X-ray of the metal emitted from the metal contained in an unknown sample; and a calculation unit 308 configured to calculate a mean valence of the metal contained in the unknown sample by applying the obtained peak energy of Kα.sub.1 X-ray and peak energy of Kα.sub.2 X-ray to the calibration curve.

Provided is a scanning electron microscope provided with an energy selection and detection function for a SE.sub.1 generated on a sample while suppressing the detection amount of a SE.sub.3 excited due to a BSE in the scanning electron microscope that does not apply a deceleration method. Provided are: an electron optical system that includes an electron source 21 generating an irradiation electron beam and an objective lens 12 focusing the irradiation electron beam on a sample; a detector 13 that is arranged outside an optical axis of the electron optical system and detects a signal electron generated when the sample is irradiated with the irradiation electron beam; a deflection electrode that forms a deflection field 26 to guide the signal electron to the detector; a disk-shaped electrode 23 that is arranged to be closer to the electron source than the deflection field and has an opening through which the irradiation electron beam passes; and a control electrode arranged along the optical axis to be closer to the sample than the deflection field. The sample and the objective lens are set to a reference potential. A potential lower than the reference potential is applied to the disk-shaped electrode, and a potential higher than the reference potential is applied to the control electrode.