Systems and methods for managing transactions of physical objects are disclosed. The system is connectable to a first distributed ledger adapted to record object transactions associated with transactions of one or more physical objects between parties. The system includes a second distributed ledger adapted to record data indicative of object handling operations carried out with respect to the one or more physical objects; and an object handling management module adapted to authenticate handling operations carried out with respect to the one or more physical objects. The object handling management module is configured and operable for obtaining parameters of execution of the handling operations, authenticating the parameters of execution of the handling operations, and recording the authenticated handling operations in the second distributed ledger. The system thereby enables recordation of the object transactions associated with the one or more physical objects upon authenticating that the parameters of execution of the handling operations that are carried out with respect to the one or more physical objects satisfy one or more respective predetermined conditions.

Devices and methods are disclosed for identifying compounds using spectra generated by X-rays at two different voltage levels.

A chemical state analysis apparatus 10 includes: an excitation source 11 configured to irradiate an irradiation region A of a predetermined surface in a sample S containing a battery material with an excitation rays for generating characteristic X-rays of the battery material; an analyzing crystal 13 of a flat plate arranged so as to face the irradiation region A; a slit 12 arranged between the irradiation region A and the analyzing crystal 13, the slit being arranged in parallel to the irradiation region A and a predetermined crystal plane of the analyzing crystal 13; an X-ray linear sensor 15 in which linear detecting elements 151 each having a length in a direction parallel to the slit 12 are arranged in a direction perpendicular to the slit; a wavelength spectrum generation unit 161 configured to generate a wavelength spectrum based on intensity of the characteristic X-rays detected by the X-ray linear sensor 15; a peak wavelength determination unit 162 configured to determine a peak wavelength which is a wavelength in a peak of the wavelength spectrum; and a chemical state specification unit 163 configured to specify a value for specifying a chemical state of the battery material in the sample S from the peak wavelength determined by the peak wavelength determination unit 162 and a standard curve representing a relation between a value representing the chemical state and the peak wavelength.

A system and method for producing period-coded glass containers is disclosed. One method comprises producing a glass container from a traceable material composition associated with a predetermined time period, manufacturing facility, and/or time of container manufacture, where the glass container is configured to be analyzed for the traceable material composition, and at least one of constituents of or amounts of materials in the traceable material composition is configured to be identified and cross-referenced to a cross-reference schedule for identifying the time period, manufacturing facility, and/or time of container manufacture in which the glass container was produced.

A method of extracting information encoded in a product includes: determining a concentration of a non-functional amount of a chemical in a product, where the concentration corresponds to one of a plurality of possible concentration ranges, where each of the plurality of possible concentration ranges indicates different non-composition manufacturing information about the product.

Optical geometry calibration devices, systems, and related methods for x-ray imaging are disclosed. An optical-based geometry calibration device is configured to interface with a two-dimensional (2D) imaging device to perform three-dimensional (3D) imaging. The optical-based geometry calibration device includes one or more optical cameras fixed to either an x-ray source or an x-ray detector, one or more markers fixed to the x-ray detector or the x-ray source, with each of the one or more optical cameras being configured to capture at least one photographic image of one or more corresponding optical markers when each x-ray image of the object is captured, and an image processing system configured to compute positions of the x-ray source relative to the x-ray detector for each 2D projection image based on the at least one photographic image of the one or more markers.

Provided is a fine structure determination method capable of easily determining tilt angles of columnar scattering bodies that are long in a thickness direction, and provided are an analysis apparatus and an analysis program thereof. There is provided an analysis method for a fine structure of a plate-shaped sample formed to have columnar scattering bodies that are long in a thickness direction and periodically arranged, comprising the steps of preparing scattering intensity data from the plate-shaped sample, that is generated via transmission of X-rays; and determining tilt angles of the scattering bodies in the plate-shaped sample with respect to a reference rotation position at which a surface of the plate-shaped sample is perpendicular to an incident direction of the X-rays, based on the prepared scattering intensity data.

An X-ray phase contrast imaging system includes an X-ray source, a detector, a plurality of gratings including a first grating and a second grating, and a grating positional displacement acquisition section configured to obtain a positional displacement of the grating based on a Fourier transform image obtained by Fourier transforming an interference fringe image detected by the detector.

Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy. The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering. In other aspects, model based measurements are performed based on the zero diffraction order beam, and measurement performance of the full beam x-ray scatterometry system is estimated and controlled based on properties of the measured zero order beam.

Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy. The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering. In other aspects, model based measurements are performed based on the zero diffraction order beam, and measurement performance of the full beam x-ray scatterometry system is estimated and controlled based on properties of the measured zero order beam.