Apparatuses, systems, and methods for determining local focus points (LFPs) on a sample are provided. In some embodiments, a controller including circuitry may be configured to cause a system to perform selecting a first plurality of resist pattern designs; performing a plurality of process simulations using the first plurality of resist pattern designs; identifying a hotspot that corresponds to a resist pattern design based on results of the performed process simulations; determining focus-related characteristics that correspond to a plurality of candidate resist patterns, wherein the plurality of candidate resist pattern designs is a subset of the first plurality of resist pattern designs and the subset is selected based on the identified hotspot; and determining locations of a plurality of LFPs based on the generated focus-related characteristics.

A method includes receiving images of a rock sample. The method also includes modifying a set of voxels related to one or more of the received images by applying a digital pore growing operation that changes non-pore voxels surrounding a pore space to pore voxels, wherein the digital pore growing operation is based at least in part on a predetermined dead oil estimate. The method also includes estimating a property of the rock sample based at least in part on the modified set of voxels.

Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

To measure a pulse height of an X-ray signal at high speed and with high precision even for high count rate X-ray measurement regardless of the type of an X-ray detector and a circuit configuration of a preamplifier, provided is an X-ray spectrometer including: a learning unit which acquires a part of a stepped wave including a rise portion through use of incident time, and generates a trained model which has learned a correlation between a acquired part and a pulse height through use of training data including a plurality of combinations of the acquired part and the pulse height; and a pulse height predictor which acquires a part of the stepped wave from the newly converted stepped wave through use of the incident time, and calculates a predicted pulse height from the acquired part of the stepped wave and the trained model.

Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

To measure a pulse height of an X-ray signal at high speed and with high precision even for high count rate X-ray measurement regardless of the type of an X-ray detector and a circuit configuration of a preamplifier, provided is an X-ray spectrometer including: a learning unit which acquires a part of a stepped wave including a rise portion through use of incident time, and generates a trained model which has learned a correlation between a acquired part and a pulse height through use of training data including a plurality of combinations of the acquired part and the pulse height; and a pulse height predictor which acquires a part of the stepped wave from the newly converted stepped wave through use of the incident time, and calculates a predicted pulse height from the acquired part of the stepped wave and the trained model.

An example scan procedure generation system includes: a display; a processor; and a computer readable storage medium comprising computer readable instructions which, when executed, cause the processor to: output, via the display, a first visual representation of an arrangement of a radiation source, a radiation detector, a workpiece positioner, and a workpiece; and based on positions and orientations of the radiation source, the radiation detector, the workpiece positioner, and the workpiece, generate a scanning procedure for execution by a physical scanner having a physical radiation source, a physical radiation detector, and a physical workpiece positioner, wherein the generated scanning procedure comprises a plurality of movements of one or more of the physical radiation source, the physical radiation detector, and the physical workpiece positioner and a plurality of image captures to capture a plurality of scan images of a physical workpiece corresponding to the workpiece in the first virtual representation.

A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer. An XPS data analyzer module analyzes the data indicative of the XPS measurements and generates geometrical and material related data indicative of geometrical and material composition parameters for said layer and data indicative of material composition of the underlayer. An XRF data analyzer module analyzes the data indicative of the XRF measurements and generates data indicative of amount of a predetermined material composition in the multi-layer structure. A data interpretation module generates combined data received from analyzer modules and processes the combined data and determines the at least one property of at least one layer of the multi-layer structure.

An example method includes obtaining one or more three dimensional computer models that model geometric and material properties of a component, and model beam properties of a beam of radiation to be applied to the component; utilizing the one or more three dimensional computer models to obtain simulated radiation imaging data, which includes simulated elastic scattering data, resulting from a simulated application of the beam having the beam properties on a plurality of discretized samples of the component, and which accounts for sequential interactions of rays of the beam with multiple ones of the plurality of discretized samples; obtaining actual radiation imaging data, which includes actual elastic scattering data, of an output beam pattern caused by application of a non-simulated beam of radiation having the beam properties to the component; and performing at least one of: determining whether an anomaly exists in a crystalline structure of the component based a comparison of the simulated elastic scattering data to the actual elastic scattering data; and modifying the actual radiation imaging data based on the simulated elastic scattering data to at least partially remove the actual elastic scattering data from the actual radiation imaging data. A corresponding system is also disclosed.

Provided is a scattering measurement analysis method including obtaining a theoretical scattering intensity from a structural model that contains a lot of scatterers, wherein the obtaining of a theoretical scattering intensity includes obtaining a contribution to the theoretical scattering intensity of a pair of a scatterer m and a scatterer n existing at a distance r from the scatterer m among a plurality of scatterers by at least one of calculations in accordance with the distance r, the calculations including a first calculation of calculating contributions of the scatterer m and the scatterer n from respective scattering factors f.sub.m(q) and f.sub.n*(q) and a center-to-center distance r.sub.mn between the scatterer m and the scatterer n, and a second calculation of substituting the scattering factor f.sub.n*(q) of the scatterer n by a first representative value and substituting a probability density function of the number of scatterers existing at the distance r by a constant value.