A micro beam generation unit capable of simultaneously capturing anisotropic images in a high signal-to-background ratio with a compact configuration and an X-ray small-angle scattering apparatus are provided. A micro beam generation unit 110 generates X-rays having a micro spot size, with which a sample is irradiated, in order to detect diffracted X-rays by a one-dimensional detector or a two-dimensional detector. The micro beam generation unit 110 includes a slit 115 that is provided on an X-ray optical path and reshapes X-rays into parallel beams, and two channel-cut monochromator crystals 117 and 118 that are arranged in arrangement of (+, , , +) and remove parasitic scattering of parallel beams reshaped by the slit. Accordingly, it is possible to simultaneously obtain anisotropic images in a high signal-to-background ratio with a compact configuration.

There is provided a transmission X-ray diffraction (XRD) apparatus, the transmission XRD apparatus including an X-ray source for generating a direct X-ray beam; sample holder for receiving the sample, the sample being positioned to receive the direct X-ray beam when held by the sample holder; a detector for receiving X-rays transmitted through the sample and outputting an X-ray diffraction pattern therefrom; and an optical element positioned between the X-ray source and the detector, the optical element including a Montel optic and a secondary pin-hole collimator collectively adapted to focus the direct X-ray beam on the detector, wherein a ratio between a dimension of the direct X-ray beam projected on the detector and a sample-to-detector distance is equal or smaller than 1/570. Related methods are also provided.

An X-ray photoelectron spectroscopy of the present invention equipped with a sample stage (1) having a movable range where it is possible to inspect the entire surface of a semiconductor wafer having a diameter of 300 mm or more, including an X-ray optical device (2) that is configured to include a rotating anode type X-ray source (20) and an X-ray optical system (30) as components, the X-ray optical system (30) being configured such that X-rays of a specific bandwidth from X-rays collimated by a collimating optical system (31) are extracted by a planar crystal optical system (32), and the X-rays of the specific bandwidth are focused by a focusing optical system (33) to irradiate the surface of the semiconductor wafer with the X-rays.