A computer-based method for three-dimensional surface metrology of samples based on scanning electron microscopy and atomic force microscopy. The method includes: (i) using a scanning electron microscope (SEM) to obtain SEM data of a set of sites on a surface of a sample; (ii) using an atomic force microscope (AFM) to measure vertical parameters of sites in a calibration subset of the set; (iii) calibrating an algorithm, configured to estimate a vertical parameter of a site when SEM data of the site are fed as inputs, by determining free parameters of the algorithm, such that residuals between the algorithm-estimated vertical parameters and the AFM-measured vertical parameters are about minimized; and (iv) using the calibrated algorithm to estimate vertical parameters of the sites in the complement to the calibration subset.

The present invention provides a charged particle beam device with which optimal parameters for the device can be effectively derived in a short time period. This charged particle beam device comprises: an electron gun (1) that irradiates a sample (10) with an electron beam (2); an image processing unit (901) that acquires an image of the sample (10) from a signal (12) generated by the sample (10) due to the electron beam (2); a database (604) that holds correspondence between a first parameter that is an optical condition, a second parameter that is a value pertaining to device performance, and a third parameter that is information pertaining to the device configuration, and stores a plurality of analysis values and measurement values; and a learning machine (605) that searches the database (604) and derives a first parameter that satisfies a target value of the second parameter.

This radiation analysis system comprises a transition edge sensor that detects radiation, a current detection mechanism that detects a current flowing in the transition edge sensor, and a computer sub-system that processes a current detection signal from the current detection mechanism. The computer sub-system is characterized by executing: a process for calculating a baseline current of the current detection signal; a process for calculating a wave height value of a signal pulse produced in the detection signal when the transition edge sensor has detected radiation; a process for acquiring correlation data based on the baseline current and the wave height value; and a process for correcting the wave height value of the signal pulse, or an energy value calculated from the wave height value, on the basis of the correlation data and the baseline current from before production of the signal pulse when radiation having unknown energy is detected by the transition edge sensor.

Systems and methods of observing a sample using an electron beam apparatus are disclosed. The electron beam apparatus comprises an electron source configured to generate a primary electron beam along a primary optical axis, and a first electron detector having a first detection layer substantially parallel to the primary optical axis and configured to detect a first portion of a plurality of signal electrons generated from a probe spot on a sample. The method may comprise generating a plurality of signal electrons and detecting the signal electrons using the first electron detector substantially parallel to the primary optical axis of the primary electron beam. A method of configuring an electrostatic element or a magnetic element to detect backscattered electrons may include disposing an electron detector on an inner surface of the electrostatic or magnetic element and depositing a conducting layer on the inner surface of the electron detector.

Disclosed herein is a method of operating an imaging system which comprises (A) an image sensor comprising (a) a top surface, (b) M physically separate active areas on the top surface, and (c) a dead zone on the top surface and between the M active areas, and (B) a radiation source system which comprises an electron bombardment target, the method comprising: for i=1, . . . , N, sequentially causing emission of X-ray photons (i) from a radiation position (i) by causing electrons to bombard a target surface of the electron bombardment target at the radiation position (i); and for i=1, . . . , N, in response to the emission of the X-ray photons (i), capturing M images (i) of portions (i) of a same object, respectively in the M active areas, resulting in M×N images, wherein each point of the object is captured in at least one image of the M×N images.

An electron beam detection apparatus for a semiconductor device and an electron beam detection assembly are disclosed, the electron beam detection apparatus including a stage, which is configured to carry and hold the semiconductor device at a top surface of the stage, and is translatable in two directions orthogonal to each other, an aiming device, configured to determine a position of the semiconductor device in a coordinate system of the electron beam detection apparatus by capturing an image of the semiconductor device, the aiming device provided with a first field of view and a first optical axis, and an electron beam detection device, configured to detect an emergent electron beam exiting the semiconductor device by projecting an electron beam to the semiconductor device, the electron beam detection device provided with a second field of view and a second optical axis which is not consistent with the first optical axis.

Provided is a tube weld X-ray inspection device for inspecting an abnormality, such as a tube welding part crack, of a heat exchanger by using X-rays.

Disclosed is a measurement probe for a measurement of elements in a mineral slurry. The measurement probe includes a housing having an X-ray window. The housing encloses: an X ray source positioned to emit source X-rays at the X-ray window; an X-ray detector positioned to detect X-rays from the X-ray window; and a control module. The control module is configured to: control an operation of the X-ray source and the X-ray detector; process X-rays detected by the X-ray detector to generate X-ray spectra data; and process the X-ray spectra data to determine a quantity of one or more elements of interest in the mineral slurry. The measurement probe further includes a probe mount adapted to couple the measurement probe to a pipe mount on a pipe carrying the mineral slurry; when the probe mount is coupled to the pipe mount, the X-ray window provides a transmission window for X-rays into a lumen of the pipe.

Some disclosed embodiments include an electron detector comprising: a first semiconductor layer having a first portion and a second portion; a second semiconductor layer; a third semiconductor layer; a PIN region formed by the first, second, and third semiconductor layers; a power supply configured to apply a reverse bias between the first and the third semiconductor layers; and a depletion region formed within the PIN region by the reverse bias and configured to generate a detector signal based on a first subset of the plurality of signal electrons captured within the depletion region, wherein the second portion of the first semiconductor layer is not depleted and is configured to provide an energy barrier to block a second subset of the plurality of signal electrons and to allow the first subset of the plurality of signal electrons to pass through to reach the depletion region.

A method for measuring at least one property of a sample includes obtaining a sample of fluid including at least fines from a downhole environment, exposing the sample to a magnetic field, measuring a magnetic susceptibility of the fines in the sample in response to the magnetic field, and identifying at least one mineral present in the fines based at least partially on the magnetic susceptibility.