A 3D printed hybrid nozzle device combining a microfluidic mixer with a liquid jet injector that addresses the bottleneck of investigating substrate-initiated biological reaction paths employing serial crystallography with XFELs. The hybrid nozzle provides for injecting aqueous protein crystal jets after fast mixing (<5 ms), reaching reaction time points (e.g., about 10 ms to about 150 ms) suitable to resolve enzyme kinetics.

A device to host a crystallization medium, such as a solution, for crystal growth and a system for X-ray diffraction experiments to determine the atomic structure of crystals. A plurality of cells have a well, a sample holder placed in the well. The solution is hosted in the sample holder between thin-plates or one thin-plate. A cap seals an opening to the cell and each sample holder can be extracted independently from each well. A system for automated X-ray diffraction experiments for small crystals in the sample holder extracted from the wells utilizes an ultrasonic acoustic levitator to determine the crystal structure at atomic resolution. X-ray diffraction images are generated by scanning the X-ray beam over the levitated sample holder along a spiral trajectory by rotating the sample holder and moving in the direction perpendicular to the X-ray beam and the rotation axis at the same time.

Methods and systems are provided for serial femtosecond crystallography for reducing the vast amount of waste of injected crystals practiced with traditional continuous flow injections. A micrometer-scale 3-D printed water-in-oil droplet generator device includes an oil phase inlet channel, an aqueous phase inlet channel, a droplet flow outlet channel, and two embedded non-contact electrodes. The inlet and outlet channels are connected internally at a junction. The electrodes comprise gallium metal injected within the 3-D printed device. Voltage across the electrodes generates water-in-oil droplets, determines a rate for a series of droplets, or triggers a phase shift in the droplets. An external trigger generates the droplets based on the frequency of an XFEL utilized in droplet detection, thereby synchronizing a series of droplets with x-ray pulses for efficient crystal detection. The generated droplets can be coupled to an SFX with XFEL experiment compatible with common liquid injector such as a GDVN.

There is provided an analysis model creation method which is capable of simply and quickly creating an accurate analysis model with respect to a structure including a crystalline material. In order to solve a problem described above, there is provided a model creation method of an analysis region used in numeral analysis, the method including a step of designating a crystal growth direction if a region is a region including crystallinity including acoustic anisotropy in the analysis region, a step of selecting partial image data to which the crystallinity of the region is reflected, a step of rotating and operating the partial image data along the crystal growth direction, and a step of creating image data which is covered in the region designated using the rotated partial image data.

An apparatus for integrating metrology and method for using the same are disclosed. The apparatus includes a multi-chamber system having a transfer chamber, a deposition chamber, an etch chamber and a metrology chamber, and a robot configured to transfer a substrate between the deposition chamber or etch chamber and the metrology chamber.

A 3D printed hybrid nozzle device combining a microfluidic mixer with a liquid jet injector that addresses the bottleneck of investigating substrate-initiated biological reaction paths employing serial crystallography with XFELs. The hybrid nozzle provides for injecting aqueous protein crystal jets after fast mixing (<5 ms), reaching reaction time points (e.g., about 10 ms to about 150 ms) suitable to resolve enzyme kinetics.

A fixed target sample holder for serial synchrotron crystallography comprising a goniometer compatible base, a carrier, a sample holding insert which can be placed into the carrier. The sample holding insert comprising fiducials and windows, wherein each of the windows are respectively configured to accept a sample. The windows can also have holes and texture within each window. Additionally, a sample loading workstation for loading crystals into the sample holder and the removal of excess liquid from the sample, comprising a humidity-controlled chamber, a sample support within the chamber, a capture to place the goniometer-compatible base, and a channel in communication with the chamber that allows for the flow of humidified air into the chamber.

The present invention relates to a recrystallization rate measurement method of zirconium alloy cladding of a nuclear fuel rod, the method including: step 1 of irradiating SEM electron beams at a given scanning interval onto a first specimen to a third specimen which were electrolytically polished and obtaining electron backscattered signals therefrom by an EBSD camera; step 2 of converting electron backscattered signals obtained in step 1 into pattern quality values, respectively, and generating the pattern quality values as frequencies by a specified interval; step 3 of obtaining pattern quality frequencies (B+D) which are a portion of a whole frequency distribution of the second specimen, and pattern quality frequencies (D+E) which are a portion of a whole frequency distribution of the first specimen; and step 4 of obtaining the recrystallization rate of the second specimen with an equation of

[00001]$X^{}=\frac{\left(B+D\right)}{\left(D+E\right)}100,\%.$

There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieves a favorable bond reliability of the 2nd bonded part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices is characterized in that the bonding wire includes: a core material of Cu or Cu alloy; and a coating layer containing conductive metal other than Cu formed on a surface of the core material, wherein the coating layer has a region containing Pd as a main component on a core material side, and has a region containing Ni and Pd in a range from a wire surface to a depth of 0.5 d when a thickness of the coating layer is defined as d (nm) in a thickness direction of the coating layer, the thickness d of the coating layer is 10 nm or more and 130 nm or less, a ratio C.sub.Ni/C.sub.Pd of a concentration C.sub.Ni (mass %) of Ni to a concentration C.sub.Pd (mass %) of Pd relative to the entire wire is 0.02 or more and 0.7 or less, a position indicating a maximum concentration of Ni is present in the range from the wire surface to a depth of 0.5 d in a concentration profile in a depth direction of the wire, and the maximum concentration of Ni is 10 atomic % or more, and at least one of the following conditions (i) and (ii) is satisfied: (i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less (ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.

The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy and a coating layer containing conductive metal other than Cu formed on a surface of the core material. The coating layer has a region containing Ni as a main component on a core material side, and has a region containing Au and Ni on a wire surface side, in a thickness direction of the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, a ratio of a concentration C.sub.Au (mass %) of Au to a concentration C.sub.Ni (mass %) of Ni relative to the entire wire is 0.02<C.sub.Au/C.sub.Ni?0.7, and a concentration of Au at the surface of the wire is 10 atomic % or more and 90 atomic % or less.