A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d.sub.1d.sub.2|/d.sub.2 obtained from the plane spacing d.sub.1 at the X-ray penetration depth of 0.3 m and the plane spacing d.sub.2 at the X-ray penetration depth of 5 m is equal to or lower than 2.110.sup.3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

An analysis device includes an X-ray generation part configured to generate four monochromatic X-rays with different energies to irradiate a sample, an electrically conductive sample stage configured to place the sample thereon and formed of an electrically conductive material, an electrode configured to detect an electric current carried by irradiating the sample with the four monochromatic X-rays with different energies, and an electric power source configured to apply a voltage between the electrically conductive sample stage and the electrode, wherein the four monochromatic X-rays with different energies are X-rays included within a range from an absorption edge of a compound semiconductor included in the sample to a higher energy side of 300 eV.

A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d.sub.1d.sub.2|/d.sub.2 obtained from the plane spacing d.sub.1 at the X-ray penetration depth of 0.3 m and the plane spacing d.sub.2 at the X-ray penetration depth of 5 m is equal to or lower than 2.110.sup.3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

A fixed target sample holder for serial synchrotron crystallography comprising goniometer compatible base, a carrier, a sample holding insert which can be placed into the carrier. The sample holing insert comprising fiducials and windows, wherein each of the windows are respectively configured to accept a sample. The windows can also have holes and texture within each window. Additionally, a sample loading workstation for loading crystals into the sample holder and the removal of excess liquid from the sample, comprising a humidity-controlled chamber, a sample support within the chamber, a capture to place the goniometer-compatible base and a channel in communication with the chamber that allows for the flow of humidified air into the chamber.

A method for quantitatively characterizing a dendrite segregation and dendrite spacing of a high-temperature alloy ingot is disclosed. The method includes preparation and surface treatment of the high-temperature alloy ingot, selection of calibration sample and determination of an element content, establishment of quantitative method for elements in micro-beam X-ray fluorescence spectrometer, quantitative distribution analysis of element components of the high-temperature alloy, quantitative characterization of characteristic element line distribution of high-temperature alloy, and analysis of a characteristic element line distribution map and statistics of a secondary dendrite spacing.

A fixed target sample holder for serial synchrotron crystallography comprising goniometer compatible base, a carrier, a sample holding insert which can be placed into the carrier. The sample holing insert comprising fiducials and windows, wherein each of the windows are respectively configured to accept a sample. The windows can also have holes and texture within each window. Additionally, a sample loading workstation for loading crystals into the sample holder and the removal of excess liquid from the sample, comprising a humidity-controlled chamber, a sample support within the chamber, a capture to place the goniometer-compatible base and a channel in communication with the chamber that allows for the flow of humidified air into the chamber.