A single-piece hybrid droplet generator and nozzle component for serial crystallography. The single-piece hybrid droplet generator component including an internally-formed droplet-generation channel, an internally-formed sample channel, a nozzle, and a pair of electrode chambers. The droplet-generation channel extends from a first fluid inlet opening to the nozzle. The sample channel extends from a second fluid inlet opening to the droplet-generation channel and joins the droplet-generation channel at a junction. The nozzle is configured to eject a stream of segmented aqueous droplets in a carrier fluid from the droplet-generation channel through a nozzle opening of the single-piece component. The pair of electrode chambers are positioned adjacent to the droplet-generation channel near the junction between the droplet-generation channel and the sample channel. The timing of sample droplets in the stream of fluid ejected through the nozzle is controlled by applying a triggering signal to electrodes positioned in the electrode chambers of the single-piece component.

Provided is a crystal evaluation method and a crystal evaluation device that can detect and evaluate efficiently in a short time multiple types of defects that may exist in SiC crystal, as well as a SiC substrate, a SiC device, and a SiC epitaxial wafer, each containing only a certain level or less of defects evaluated by the crystal evaluation method. A crystal evaluation method of evaluating a crystal state of a SiC crystal has at least a detection process of acquiring Kikuchi patterns at a plurality of measurement points of the SiC crystal using an electron backscatter diffraction method, and an evaluation process of evaluating the crystal state of the SiC crystal through image analysis of the Kikuchi pattern of each measurement point obtained in the detection process.