The present invention refers to a method for improving a Transmission Kikuchi Diffraction, TKD pattern, wherein the method comprises the steps of: Detecting a TKD pattern (20b) of a sample (12) in an electron microscope (60) comprising at least one active electron lens (61) focusing an electron beam (80) in z-direction on a sample (12) positioned in distance D below the electron lens (61), the detected TKD (20b) pattern comprising a plurality of image points x.sub.D, y.sub.D and mapping each of the detected image points x.sub.D, y.sub.D to an image point of an improved TKD pattern (20a) with the coordinates x.sub.0, y.sub.0 by using and inverting generalized terms of the form x.sub.D=γ*A+(1−γ)*B and y.sub.D=γ*C+(1−γ)*D wherein $\gamma =\frac{Z}{D}$
with Z being an extension in the z-direction of a cylindrically symmetric magnetic field B.sub.Z of the electron lens (61), and wherein A, B, C, D are trigonometric expressions depending on the coordinates x.sub.0, y.sub.0, with B and D defining a rotation around a symmetry axis of the magnetic field B.sub.Z, and with A and C defining a combined rotation and contraction operation with respect to the symmetry axis of the magnetic field B.sub.Z. The invention further relates to a measurement system, computer program and computer-readable medium for carrying out the method of the invention.

An apparatus for inspecting a semiconductor device according to an embodiment includes an X-ray irradiation unit configured to make monochromatic X-rays obliquely incident on the semiconductor device, which is an object at a predetermined angle of incidence, a detection unit configured to detect observed X-rays observed from the object using a plurality of two-dimensionally disposed photodetection elements, an analysis apparatus configured to generate X-ray diffraction images obtained by photoelectrically converting the observed X-rays, and a control unit configured to change an angle of incidence and a detection angle of the X-rays, in which the analysis apparatus acquires an X-ray diffraction image every time the angle of incidence is changed, extracts a peak X-ray diffraction image, X-ray intensity of which becomes maximum for each of pixels and compares the peak X-ray diffraction image among the pixels to thereby estimate a stress distribution of the object.

A system and a method use x-ray fluorescence to analyze a specimen by illuminating a specimen with an incident x-ray beam having a near-grazing incident angle relative to a surface of the specimen and while the specimen has different rotational orientations relative to the incident x-ray beam. Fluorescence x-rays generated by the specimen in response to the incident x-ray beam are collected while the specimen has the different rotational orientations.

A thin film analyzing device includes a processing and analyzing chamber for performing processing and analyzing of a subject having a thin film on a substrate. The processing and analyzing chamber includes a sample holder arranged to hold the subject, an X-ray irradiation source arranged to irradiate the subject with X-rays, a fluorescent X-ray detector configured to detect fluorescent X-rays which are emitted from the subject, a diffracted/reflected X-ray detector configured to detect reflected X-rays and diffracted X-rays which are emitted from the subject, and a substrate remover arranged to remove the substrate.

The present invention refers to a method for improving a Transmission Kikuchi Diffraction, TKD pattern, wherein the method comprises the steps of: Detecting a TKD pattern (20b) of a sample (12) in an electron microscope (60) comprising at least one active electron lens (61) focussing an electron beam (80) in z-direction on a sample (12) positioned in distance D below the electron lens (61), the detected TKD (20b) pattern comprising a plurality of image points x.sub.D, y.sub.D and mapping each of the detected image points x.sub.D, y.sub.D to an image point of an improved TKD pattern (20a) with the coordinates x.sub.0, y.sub.0 by using and inverting generalized terms of the form x.sub.D=γ*A+(1−γ)*B and y.sub.D=γ*C+(1−γ)*D wherein

[00001]$\gamma =\frac{Z}{D}$ with Z being an extension in the z-direction of a cylindrically symmetric magnetic field B.sub.Z of the electron lens (61), and wherein A, B, C, D are trigonometric expressions depending on the coordinates x.sub.0, y.sub.0, with B and D defining a rotation around a symmetry axis of the magnetic field B.sub.Z, and with A and C defining a combined rotation and contraction operation with respect to the symmetry axis of the magnetic field B.sub.Z. The invention further relates to a measurement system, computer program and computer-readable medium for carrying out the method of the invention.

A ball-mapping system connectable to an X-ray diffraction apparatus, for collecting X-ray diffraction data at measurement points located on a ball-shaped sample is provided. The ball-mapping system includes a sample stage, including a sample-contacting surface and a guide assembly cooperating with the sample-contacting surface for guiding the sample-contacting surface along a first axis and along a second axis unparallel to the first axis. The ball-mapping system includes a sample holder for keeping the ball-shaped sample in contact with the sample stage and a motor assembly in driving engagement with the guide assembly, the motor assembly driving the sample-contacting surface in translational movement along the first axis and the second axis, the translational movement of the sample-contacting surface causing the ball-shaped sample to rotate, on the sample-contacting surface along the first axis and the second axis. A method for mapping the ball-shaped sample is also provided.

Provided is a method of manufacturing a spring for inspecting the stress distribution of the spring under load. The method for manufacturing a spring (1) includes the steps of applying a load to the spring (1), measuring the stress of the spring (1) under the load, and releasing the load applied to the spring (1), the measuring the stress of the spring (1) being made by measuring the stress on the surface of the active part of the spring (1) using X-ray diffraction with the cosa method, and the method further including the step of determining whether the magnitude of the stress of the spring (1) meets a criterion.

A method for measuring a residual stress, including irradiating a cast and forged steel product with X-rays; two-dimensionally detecting intensities of diffracted X-rays originating from the X-rays; and calculating a residual stress based on a diffraction ring formed by an intensity distribution of the diffracted X-rays, wherein the irradiating includes changing a condition for irradiation of the cast and forged steel product with the X-rays, the irradiating is a step of performing the changing each time the cast and forged steel product is irradiated with the X-rays, the calculating is a step of calculating the residual stress each time the cast and forged steel product is irradiated with the X-rays, and the method further includes averaging a plurality of residual stresses calculated in the calculating after the irradiating, the detecting, and the calculating are performed in this order a plurality of times.

A method that measures stress of a test subject including a metal includes: detecting, using a two-dimensional detector, a diffraction ring of diffracted X-rays which is formed by causing X-rays from an irradiation unit to be incident on the test subject and to be diffracted by the test subject; and calculating the stress of the test subject based on detection results during the detection step. Therein, the detection step involves causing X-rays from the irradiation unit to be incident on each of a plurality of sites on the test subject with the irradiation unit angled relative to the test subject in a manner such that the angle of incidence on the test subject is within the range of 5-20, inclusive, and detecting, using a two-dimensional detector, the diffraction ring formed by the diffraction of the X-rays by the test subject.

A system and a method use x-ray fluorescence to analyze a specimen by illuminating a specimen with an incident x-ray beam having a near-grazing incident angle relative to a surface of the specimen and while the specimen has different rotational orientations relative to the incident x-ray beam. Fluorescence x-rays generated by the specimen in response to the incident x-ray beam are collected while the specimen has the different rotational orientations.