A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer. An XPS data analyzer module analyzes the data indicative of the XPS measurements and generates geometrical and material related data indicative of geometrical and material composition parameters for said layer and data indicative of material composition of the underlayer. An XRF data analyzer module analyzes the data indicative of the XRF measurements and generates data indicative of amount of a predetermined material composition in the multi-layer structure. A data interpretation module generates combined data received from analyzer modules and processes the combined data and determines the at least one property of at least one layer of the multi-layer structure.

A system and a method use x-ray fluorescence to analyze a specimen by illuminating a specimen with an incident x-ray beam having a near-grazing incident angle relative to a surface of the specimen and while the specimen has different rotational orientations relative to the incident x-ray beam. Fluorescence x-rays generated by the specimen in response to the incident x-ray beam are collected while the specimen has the different rotational orientations.

A method of in-situ TEM nanoindentation for a damaged layer of silicon is disclosed. Wet etching and ion beam lithography are used for preparing a silicon wedge sample. An etched silicon wedge is thinned and trimmed by a focused ion beam; thinning uses ion beam of 30 kV: 50-80 nA, and trimming uses ion beam of 5 kV: 1-6 pA; and the top width of the silicon wedge is 80-100 nm. The sample is fixed on a sample holder of an in-situ TEM nanomechanical system by using a conductive silver adhesive. The sample is indented with a tip in the TEM, so that the thickness of the damaged layer of the sample is 2-200 nm; and an in-situ nanoindentation experiment is conducted on the damaged layer of the sample in the TEM.

A method of quantifying an antimicrobial coatings using a handheld XRF analyzer is disclosed. The method provides an estimate of the expected level of antimicrobial efficacy for a thin film comprising silicon and/or titanium by obtaining a .sub.14Si or .sub.22Ti peak intensity using XRF spectroscopy and converting the obtained .sub.14Si or .sub.22Ti peak intensity to the expected level of efficacy using a calibration curve. A properly calibrated handheld XRF analyzer allows a user to assess the viability of antimicrobial coatings in the field, such as in a hospital where various fomites may be coated with silane and/or titanium compositions.

An analysis method using an X-ray fluorescence analyzer is provided in which an X-ray spectrum is acquired by detecting a secondary X-ray emitted from a specimen when the specimen is irradiated with a primary X-ray. The analysis method includes: acquiring a first X-ray spectrum obtained, with a take-off angle of the secondary X-ray being set as a first take-off angle; acquiring a second X-ray spectrum obtained, with a take-off angle of the secondary X-ray being set as a second take-off angle that is different from the first take-off angle; and obtaining information on an element in a depth direction of a specimen based on the first X-ray spectrum and the second X-ray spectrum.

A measurement system obtains its own measurement result through use of a different system's measurement result obtained by a different measurement system. The measurement system includes: an output data acquisition unit, a designated position acquisition unit configured to acquire a designated position, which is a position indicating an address at which the different system's measurement result is represented in the output data, by a user's designation, a different system's measurement result acquisition unit, a measurement result acquisition unit, and a position data storage unit configured to store position data indicating the designated position. The different system's measurement result acquisition unit acquires, when the position data is already stored in the position data storage unit in a case where the output data acquisition unit acquires different output data obtained by the different measurement system, the different system's measurement result included at the designated position indicated by the position data.

The present disclosure relates to a device and a method for measuring a thickness of an ultrathin film on a solid substrate. The thickness of the target ultrathin film is measured from the intensity of the fluorescence converted by the substrate and leaking and tunneling through the target ultrathin film at low detection angle. The fluorescence generated from the substrate has sufficient and stable high intensity, and therefore can provide fluorescence signal strong enough to make the measurement performed rapidly and precisely. The detection angle is small, and therefore the noise ratio is low, and efficiency of thickness measurement according to the method disclosed herein is high. The thickness measurement method can be applied into In-line product measurement without using standard sample, and therefore the thickness of the product can be measured rapidly and efficiently.

A measurement system obtains its own measurement result through use of a different system's measurement result obtained by a different measurement system. The measurement system includes: an output data acquisition unit, a designated position acquisition unit configured to acquire a designated position, which is a position indicating an address at which the different system's measurement result is represented in the output data, by a user's designation, a different system's measurement result acquisition unit, a measurement result acquisition unit, and a position data storage unit configured to store position data indicating the designated position. The different system's measurement result acquisition unit acquires, when the position data is already stored in the position data storage unit in a case where the output data acquisition unit acquires different output data obtained by the different measurement system, the different system's measurement result included at the designated position indicated by the position data.

There is provided a control apparatus 40 that controls a tilt of a sample, the control apparatus comprising an input section 41 that receives an input of inclination information representing inclination of the sample with respect to a ϕ axis; an adjustment amount determination section 43 that determines adjustment amounts of a ω value and a χ value for correcting a deviation amount between a scattering vector and a normal line to a sample surface or a lattice plane with respect to a ϕ value that varies, using the inclination information; and a drive instruction section 47 that drives a goniometer according to ϕ axis rotation of the sample, based on the determined adjustment amounts of the ω value and the χ value, during an X-ray diffraction measurement.

Provided is a substrate contamination analysis system capable of individually analyzing impurities present in a film and impurities present on a surface of the film. The substrate contamination analysis system includes: a vapor phase decomposition device configured to expose a film formed on a surface of a first substrate to a gas that reacts with the film, to thereby dissolve the film; a recovery device configured to perform a first recovery operation of moving an object to be measured to a first measurement position before the film is dissolved and a second recovery operation of moving the object to be measured to a second measurement position after the film is dissolved; and an analyzer configured to analyze the object to be measured every time the recovery device performs the first recovery operation and the second recovery operation.