This fluorescent X-ray analysis apparatus is provided with an X-ray irradiation unit 20 for irradiating a sample S with: X-rays, having an energy that exceeds the energy absorption edge value of Ag which is selected as a measurement target element, and that is no greater than the energy absorption edge value of Sn which is an adjacent element having a higher energy absorption edge value than Ag; and X-rays having an energy exceeding the energy absorption edge value of Sn which is selected as a measurement target element.

A system for evaluating a battery cell includes an imaging device configured to take an image of at least part of the battery cell, and a processor. The processor is configured to perform: determining a region of interest in the acquired image, reducing a sharpness of the acquired image to generate a reference image, comparing the acquired image and the reference image, and identifying a discontinuity of the battery cell based on a difference between the acquired image and the reference image.

This disclosure relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this disclosure is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode of 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR for measurements of samples with limited sample area and scattering volumes. In one embodiment, the incident angle of the long-wavelength focused X-ray is ≥24°, and the sample area is ≤25 μm×25 μm.

An apparatus is disclosed for the examination and inspection of integrated devices such as integrated circuits. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed. For some embodiments of the invention, the photoemissive structure is deposited directly onto the integrated device. In some embodiments, the incidence angle of the x-rays is varied to allow internal three-dimensional structures of the integrated device to be determined. In some embodiments, the recorded image is compared with a reference data to enable inspection for manufacturing quality control.

A method for producing a layer structure for the production of thin-film solar cells including: providing a carrier substrate, depositing a rear electrode layer on the carrier substrate, producing a rear-electrode-layer-free region, creating a measurement layer over the rear electrode layer such that the measurement layer is situated at least over the rear-electrode-layer-free region, wherein the measurement layer is a photoactive absorber layer or a precursor layer of the photoactive absorber layer, and determining a quantity or a relative share of a component of the measurement layer in a region of the measurement layer that is situated over the rear-electrode-layer-free region of the rear electrode layer.

A semiconductor device includes an oxide semiconductor layer including indium, a gate electrode facing the oxide semiconductor layer, a gate insulating layer between the oxide semiconductor layer and the gate electrode, and a first electrode arranged above the oxide semiconductor layer and being in contact with the oxide semiconductor layer from above the oxide semiconductor layer. The indium is unevenly distributed in an unevenly distributed region among the oxide semiconductor layer. The unevenly distributed region overlaps with the first conductive layer in a planar view.

According to one embodiment, there is provided an inspection device including a measurement unit and a controller. The measurement unit measures a physical quantity in accordance with a predetermined pattern for a sample with the predetermined pattern, and generates a first spectral pattern in accordance with a measurement result. The controller predicts a processed cross-sectional shape by applying a parameter to a shape function indicating an ion flux amount in accordance with an etching depth in a case where the predetermined pattern is processed in dry etching processing, determines a second spectral pattern in accordance with the processed cross-sectional shape that has been predicted, adjusts the parameter while comparing the first spectral pattern with the second spectral pattern, and reconstructs the processed cross-sectional shape of the sample in accordance with an adjustment result.

Embodiments may include methods, systems, and apparatuses for care area based swath speed for throughput and sensitivity improvement. A method may comprise receiving scan region of a die. The scan region of the die may have a first care area at a controller configured to control an inspection tool, wherein the inspection tool includes a stage having the die disposed thereon. The method may then include scanning a first portion of the scan region at a fast feed rate and the first care area at a slow feed rate. Scanning may include emitting particles in a particle beam toward the die resulting an incidence on the die. Emitting may be performed using a particle emitter. Scanning may then include detecting a portion of particles reflected from the incidence. Detecting may be performed using a detector. Scanning may then include changing a position of the stage relative to the incidence.

A method for scanning a sample by a charged particle beam tool is provided. The method includes providing the sample having a scanning area including a plurality of unit areas, scanning a unit area of the plurality of unit areas, blanking a next unit area of the plurality of unit areas adjacent to the scanned unit area, and performing the scanning and the blanking the plurality of unit areas until all of the unit areas are scanned.

A system is disclosed for the examination and inspection of integrated devices such as integrated circuits using 3-D laminography. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed. In some embodiments, the incidence angle of the x-rays is varied to gather multiple images that allow internal three-dimensional structures of the integrated device to be determined using computed laminography. In some embodiments, the recorded images are compared with reference data to enable inspection for manufacturing quality control.