A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.

An X-ray fluorescence spectrometer of the present invention includes: a determination module (21) configured to determine, with respect to every one of measurement lines that correspond to secondary X-rays having intensities to be measured, whether or not a ratio of a theoretical intensity in thin film calculated on the basis of an assumed thickness and known contents of respective components to a theoretical intensity in bulk calculated on the basis of the known contents of the respective components exceeds a predetermined threshold; and a saturation thickness quantification module (23) configured to, according to a positive determination by the determination module (21), calculate a saturation thickness with respect to each of the measurement lines, at which the theoretical intensity saturates, on the basis of the known contents of the respective components and to adopt a largest saturation thickness as a quantitative value of a thickness.

A deposition system is provided capable of measuring at least one of the film characteristics (e.g., thickness, resistance, and composition) in the deposition system. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition system in accordance with the present disclosure includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, and a target enclosing the substrate process chamber. A shutter disk including an in-situ measuring device is provided.

The purpose of the present disclosure is to provide a pattern measurement device that can accurately measure positional deviation between a center of gravity of a top surface of a pattern and a center of gravity of a bottom surface of the pattern, even when an incidence angle of a charged particle beam varies for each irradiation position of the charged particle beam. The pattern measurement device according to the present disclosure acquires an angular deviation amount corresponding to coordinates in a visual field of a pattern in accordance with a relationship between the coordinates in the visual field of the pattern and an angular deviation amount of the charged particle beam, and acquires a positional deviation amount corresponding to the coordinates in the visual field of the pattern in accordance with a relationship between the angular deviation amount and the center of gravity positional deviation amount (see FIG. 3c).

A deposition system is provided capable of measuring at least one of the film characteristics (e.g., thickness, resistance, and composition) in the deposition system. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition system in accordance with the present disclosure includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, and a target enclosing the substrate process chamber. A shutter disk including an in-situ measuring device is provided.

A system and method for analyzing a three-dimensional structure of a sample includes generating a first x-ray beam having a first energy bandwidth less than 20 eV at full-width-at-half maximum and a first mean x-ray energy that is in a range of 1 eV to 1 keV higher than an absorption edge energy of a first atomic element of interest, and that is collimated to have a collimation angular range less than 7 mrad in at least one direction perpendicular to a propagation direction of the first x-ray beam; irradiating the sample with the first x-ray beam at a plurality of incidence angles relative to a substantially flat surface of the sample, the incidence angles of the plurality of incidence angles in a range of 3 mrad to 400 mrad; and simultaneously detecting a reflected portion of the first x-ray beam from the sample and detecting x-ray fluorescence x-rays and/or photoelectrons from the sample.

A method of quantifying an antimicrobial coatings using a handheld XRF analyzer is disclosed. The method provides an estimate of the expected level of antimicrobial efficacy for a thin film comprising silicon and/or titanium by obtaining a .sub.14Si or .sub.22Ti peak intensity using XRF spectroscopy and converting the obtained .sub.14Si or .sub.22Ti peak intensity to the expected level of efficacy using a calibration curve. A properly calibrated handheld XRF analyzer allows a user to assess the viability of antimicrobial coatings in the field, such as in a hospital where various fomites may be coated with silane and/or titanium compositions.

A method, a non-transitory computer readable medium and a system for focusing an electron beam. The method may include focusing the electron beam on at least one evaluated area of a wafer, based on a height parameter of each one of the at least one evaluated area. The wafer includes a transparent substrate. The height parameter of each one of the at least one evaluated area is determined based on detection signals generated as a result of an illumination of one or more height-measured areas of the wafer with a beam of photons. The illumination occurs while one or more supported areas of the wafer contact one or more supporting elements of a chuck, and while each one of the one or more height-measured areas are spaced apart from the chuck by a distance that exceeds a depth of field of the optics related to the beam of photons.

A method includes obtaining sensor data associated with a deposition process performed in a process chamber to deposit a film stack on a surface of a substrate, wherein the film stack comprises a plurality of layers of a first material and a plurality of layers of a second material. The method further includes obtaining metrology data associated with the film stack. The method further includes training a first machine-learning model based on the sensor data and the metrology data, wherein the first machine-learning model is trained to generate predictive metrology data associated with layers of the first material. The method further includes training a second machine-learning model based on the sensor data and the metrology data, wherein the second machine-learning model is trained to generate predictive metrology data associated with layers of the second material.

A method includes receiving an x-ray signal transmitted from an x-ray transmitter through a coated separator membrane. The method also includes obtaining infrared (IR) signals from the coated separator membrane. The IR signals include two or more spectral components including peaks that include a first peak from the separator membrane. The method also includes the processor determining whether a second peak is present, and determining if at least one contaminant/additive exists in the coating present within the coated separator membrane. The method also includes calculating, by the processor, a concentration/area weight of the at least one contaminant/additive and a weight, density, or thickness of the coating.