The disclosure discloses a method and apparatus for measuring a size of a crystal grain, and a method for fabricating a poly-silicon thin film. The method for measuring the size of the crystal grain includes: obtaining a grain morphology image of a crystalline region of a crystal, and drawing a grain interface diagram according to the grain morphology image; measuring at least one crystal grain in the grain interface diagram, and determining a transverse size and a longitudinal size of each measured crystal grain; and determining a transverse size and a longitudinal size of a crystal grain of the crystal according to the transverse size and the longitudinal size of each measured crystal grain.

The disclosure discloses a method and apparatus for measuring a size of a crystal grain, and a method for fabricating a poly-silicon thin film. The method for measuring the size of the crystal grain includes: obtaining a grain morphology image of a crystalline region of a crystal, and drawing a grain interface diagram according to the grain morphology image; measuring at least one crystal grain in the grain interface diagram, and determining a transverse size and a longitudinal size of each measured crystal grain; and determining a transverse size and a longitudinal size of a crystal grain of the crystal according to the transverse size and the longitudinal size of each measured crystal grain.

A continuous alpha monitor includes an air intake mechanism, which in turn includes an air mover and an air flowrate monitor, an air intake prefilter that limits particulates in the air intake mechanism to an aerodynamic diameter of 10 microns or less, and a particle size detector mounted downstream of the air intake prefilter, the air particle size detector providing an airborne dust concentration and a first distribution of aerodynamic diameters of particulates in air passing the prefilter, the particulates including depleted uranium particulates. The monitor further includes a sample filter web that collects the particulates; a solid state detector that detects alpha radiation emitted by the collected particulates; a processor that executes machine instructions embodied on a non-transient computer-readable storage medium to compute a dust loading on the sample filter web; and the processor computes an indication of alpha concentration detected by the detector mechanism.

A continuous alpha monitor includes an air intake mechanism, which in turn includes an air mover and an air flowrate monitor, an air intake prefilter that limits particulates in the air intake mechanism to an aerodynamic diameter of 10 microns or less, and a particle size detector mounted downstream of the air intake prefilter, the air particle size detector providing a distribution of aerodynamic diameters of particulates in air passing the prefilter, the particulates including depleted uranium particulates. The monitor further includes a sample filter mechanism that collects the particulates; a detector mechanism that detects alpha radiation emitted by the collected particulates; a dust loading mechanism that computes a dust thickness on the sample filter mechanism; and an output mechanism that provides an indication of alpha concentration detected by the detector mechanism.

An X-ray fluorescence spectrometer includes: an X-ray source (3) to irradiate, with primary X-rays (6), a sample (1) that is multiple nanoparticles placed on a substrate (10); an irradiation angle adjustment unit (5) to adjust an irradiation angle at which a surface (10a) of the substrate is irradiated; a detection unit (8) to measure an intensity of fluorescent X-rays (7) from the sample (1); a peak position calculation unit (11) to generate a sample profile representing change of the intensity of the fluorescent X-rays (7) against change of the irradiation angle, and to calculate a peak irradiation angle position; a particle diameter calibration curve generation unit (21) to generate a calibration curve; and a particle diameter calculation unit (22) to calculate a particle diameter of nanoparticles of an unknown sample (1) by applying the peak irradiation angle position of the unknown sample (1) to the calibration curve.

An X-ray fluorescence spectrometer includes: an X-ray source (3) to irradiate, with primary X-rays (6), a sample (1) that is multiple nanoparticles placed on a substrate (10); an irradiation angle adjustment unit (5) to adjust an irradiation angle at which a surface (10a) of the substrate is irradiated; a detection unit (8) to measure an intensity of fluorescent X-rays (7) from the sample (1); a peak position calculation unit (11) to generate a sample profile representing change of the intensity of the fluorescent X-rays (7) against change of the irradiation angle, and to calculate a peak irradiation angle position; a particle diameter calibration curve generation unit (21) to generate a calibration curve; and a particle diameter calculation unit (22) to calculate a particle diameter of nanoparticles of an unknown sample (1) by applying the peak irradiation angle position of the unknown sample (1) to the calibration curve.

The invention relates to method and system configured for material analysis and mineralogy. At least one image based on first emission from a sample is provided. First spectra of the sample based on second emissions from the second scan locations of the image are provided. A confidence score is calculated for every first spectrum, and second scan location(s) with confidence score(s) below a threshold value are selected. Second emissions from the selected second scan location(s) are acquired to provide new image and determine new second scan locations within the respective new image.

There is provided a novel Cu bonding wire for semiconductor devices that achieves a favorable shape stability of a 2nd bonded part. The bonding wire includes: a core material of Cu or a Cu alloy; and a coating layer containing a conductive metal other than Cu formed on a surface of the core material, wherein an average size of crystal grains in a wire circumferential direction, obtained by analyzing a surface of the wire by an electron backscattered diffraction (EBSD) method, is 35 nm or more and 140 nm or less, three or more elements selected from the group consisting of Pd, Pt, Au, Ni, and Ag are contained in a region (hereinafter, referred to as a region d.sub.0-10) from the surface to a depth of 10 nm in a concentration profile in a depth direction of the wire obtained by measurement using Auger electron spectroscopy (AES), and concentration conditions (i) and (ii) below are satisfied: (i) for at least three elements out of the three or more elements contained in the region d.sub.0-10, each element have an average concentration in the region d.sub.0-10 of 5 atomic % or more, and (ii) for all elements out of the three or more elements contained in the region d.sub.0-10, each element have an average concentration in the region d.sub.0-10 of 80 atomic % or less.

Unknown particles on a surface of a semiconductor wafer are classified by applying a range of particles of known chemical composition and different sizes onto a test wafer, measuring the sizes of a plurality of the particles and spectrally analyzing a makeup of the particles by energy-dispersive x-ray spectroscopy, followed by ascertaining a substantive content therefrom; creating a best-fit curve to the size and substantive content of the particles; measuring the particle size of an unknown particle and recording its spectrum by energy-dispersive x-ray spectroscopy and classifying the unknown particle as the result of a comparison of the size and the substantive content of the unknown particle with the best-fit curve.