Methods for locating and characterizing defects can include performing a first scan of a substrate to produce a first defect map including a first set of coordinates of one or more defects of the substrate and performing a second scan of one or more regions of the substrate associated with the defects based on the first defect map to produce one or more electron channeling contrast (ECC) images of the defects. Characterization of the defects can be based on the ECC images alone or in combination with other techniques. Such methods can include determining a second set of coordinates associated with the one or more defects based on the ECC images and directing an ion beam toward the substrate and milling the substrate based on the second set of coordinates.

There is described a handheld inspection device for inspecting an infrastructure having a structure wall at least partially supported into material such as soil. The handheld inspection device generally has a portable frame; a high energy photon source mounted to said portable frame and having a radioactivity level below a threshold radioactivity level; a scattered photon detector mounted to said portable frame and having a field of view diverging towards said target region of said infrastructure and encompassing at least a portion thereof, said scattered photon detector detecting scatter events incoming from said target region during a given period of time, and generating a signal indicative of scatter events detected during said period of time; and a controller receiving said signal generated by said scattered photon detector; and generating an integrity indication associated to said target region of said infrastructure based on said received signal.

An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blend structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth.

A method for image reconstruction includes irradiating an object with a beam of radiation from a radiation source, measuring an attenuated portion of the beam, estimating a density of the object, determining a predicted attenuated portion of the beam using the density estimate, and iteratively adjusting the density estimate of the object. The predicted attenuated portion and the measured attenuated portion are compared to determine a signal difference. The density estimate of each portion of the object is adjusted by scaling the density estimate using the average signal differences of rays that intersect the portion of the object. The density estimate may be repeatedly adjusted until a difference between consecutive density estimates is below a selected threshold or a predetermined number of adjustments have been completed. The attenuated portion of the beam may include a scattered portion and a transmitted portion.

Described is a computer-implemented method for monitoring the status of a device for investigating objects, wherein the investigation of an object involves determining measurement data by measuring the object and operating data of the device is determined during the investigation of the object. The method includes: determining measurement data of the object by means of the device; determining operating data of the device during the determining measurement data of the object; determining at least one quality parameter from the measurement data; analysing the operating data and the at least one quality parameter; and determining a status characteristic value based on the analysing in order to monitor the status of the device, wherein the status characteristic value indicates a status of the device. The computer-implemented method comparatively easily monitors the functionality of devices for investigating objects during adaptive measurements.

It is possible to detect, with high accuracy, whether a structure is a good product or a defective product. This inspection apparatus for a structure comprises: X-ray emitting means (1a, 1b) for emitting X-rays through two or more paths; one or more X-ray detection means (3) for detecting the X-rays passing through the a structure (2); a multiple position distance measurement means (4) for measuring the distance from the X-ray emitting means to the structure at a plurality of positions; and an image processing means (5). The image processing means includes: a defective candidate detection means for detecting a defective candidate in two or more images acquired by the X-ray detection means; a height measurement means; an image calculation means for logically multiplying an image, on which height position information obtained by the height measurement means is recorded, by a defective candidate image obtained by the defective candidate detection means; an inspection range setting means for setting an inspection range from the distance and the thickness of the structure; and a defect determination means for determining that there is a defect when the inspection range includes the defective candidate.

The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.

A method for correction of thermal defects using tomographic scanning for additive manufacturing is provided. The method may include forming a portion of an object using an additive manufacturing system based on an intended three-dimensional (3D) model of the object that is in an additive manufacturing system format. The portion of the object is scanned using a tomographic scanner to obtain a model of the portion of the object in a tomographic scanner format. The model is converted from the tomographic scanner format into the additive manufacturing system format to obtain a converted tomographic model; and the converted tomographic model is compared to the intended 3D model to identify a defect in the portion of the object. A modified 3D model may be generated of the object correcting the intended 3D model to address the defect of the portion of the object.

Some embodiments include a radiographic inspection system, comprising: a drive mechanism configured to move along a structure; a detector attached to the drive mechanism; a radiation source attached to the drive mechanism and positionable relative to the detector such that a width of the structure casts a radiation shadow on an active area of the detector; and control logic coupled to the detector and configured to: receive an image from the detector; generate side wall loss information based on the image; and generate bottom wall loss information based on the image.

A measurement system is provided that includes a radiographic source, a detector, and at least one processor. The at least one processor is operably coupled to the detector and configured to: position the radiographic source in a first position relative to the object to image a first portion of the object, with the first position configured to maintain parallax for the first portion within a predetermined amount; obtain first imaging information of the first portion of the object in the first position; adjust the position of the radiographic source relative to the object to a second position, with the second position configured to maintain parallax for the second portion within a predetermined amount; obtain second imaging information of the second portion of the object in the second position; and generate an image of the object using the first imaging information and the second imaging information.