The present invention relates to a method for superimposing at least two images of a photolithographic mask, wherein the method comprises the following steps: (a) determining at least one first difference of at least one first image relative to design data of the photolithographic mask; (b) determining at least one second difference of at least one second image relative to design data of the photolithographic mask, or relative to the at least one first image; and (c) superimposing the at least one first image and the at least one second image taking account of the at least one first difference and the at least one second difference.

Nanowires that may be utilized in microscopy, for example atomic force microscopy (AFM), as part of an AFM probe, as well as for other uses, are disclosed. The nanowires may be formed from a Group III nitride such as an epitaxial layer that may be or include gallium nitride, indium nitride, aluminum nitride, and an alloy of these materials. During use of the AFM probe to measure a topography of a test sample surface, the nanowire can activated and caused to lase and emit a light, thereby illuminating the surface with the light. In an implementation, the light can be collected by the AFM probe itself, for example through an optical fiber to which the nanowire is attached.

Nanowires that may be utilized in microscopy, for example atomic force microscopy (AFM), as part of an AFM probe, as well as for other uses, are disclosed. The nanowires may be formed from a Group III nitride such as an epitaxial layer that may be or include gallium nitride, indium nitride, aluminum nitride, and an alloy of these materials. During use of the AFM probe to measure a topography of a test sample surface, the nanowire can activated and caused to lase and emit a light, thereby illuminating the surface with the light. In an implementation, the light can be collected by the AFM probe itself, for example through an optical fiber to which the nanowire is attached.

A new resonant-cavity-enhanced Atomic Force Microscopy (AFM) active optical probe integrates a semiconductor laser source and an aperture AFM/near-field scanning optical microscopy (NSOM) probe in either external-resonant-cavity or internal-resonant-cavity configuration to enable both conventional AFM measurements and optical imaging and spectroscopy at the nanoscale.

A new resonant-cavity-enhanced Atomic Force Microscopy (AFM) active optical probe integrates a semiconductor laser source and an aperture AFM/near-field scanning optical microscopy (NSOM) probe in either external-resonant-cavity or internal-resonant-cavity configuration to enable both conventional AFM measurements and optical imaging and spectroscopy at the nanoscale.

A probe for atomic force microscopy comprises a tip for atomic force microscopy oriented in a direction referred to as the longitudinal direction and protrudes from an edge of a substrate in the longitudinal direction, wherein the tip is arranged at one end of a shuttle attached to the substrate at least via a first and via a second structure, which structures are referred to as support structures, at least the first support structure being a flexible structure, extending in a direction referred to as the transverse direction, perpendicular to the longitudinal direction and anchored to the substrate by at least one mechanical linkage in the transverse direction, the support structures being suitable for allowing the shuttle to be displaced in the longitudinal direction. An atomic force microscope comprising at least one such probe is also provided.

Infrared (IR) vibrational scattering scanning near-field optical microscopy (s-SNOM) has advanced to become a powerful nanoimaging and spectroscopy technique with applications ranging from biological to quantum materials. However, full spatiospectral s-SNOM continues to be challenged by long measurement times and drift during the acquisition of large associated datasets. Various embodiments provide for a novel approach of computational spatiospectral s-SNOM by transforming the basis from the stationary frame into the rotating frame of the IR carrier frequency. Some embodiments see acceleration of IR s-SNOM data collection by a factor of 10 or more in combination with prior knowledge of the electronic or vibrational resonances to be probed, the IR source excitation spectrum, and other general sample characteristics.

Infrared (IR) vibrational scattering scanning near-field optical microscopy (s-SNOM) has advanced to become a powerful nanoimaging and spectroscopy technique with applications ranging from biological to quantum materials. However, full spatiospectral s-SNOM continues to be challenged by long measurement times and drift during the acquisition of large associated datasets. Various embodiments provide for a novel approach of computational spatiospectral s-SNOM by transforming the basis from the stationary frame into the rotating frame of the IR carrier frequency. Some embodiments see acceleration of IR s-SNOM data collection by a factor of 10 or more in combination with prior knowledge of the electronic or vibrational resonances to be probed, the IR source excitation spectrum, and other general sample characteristics.

Systems, apparatuses, and methods for realizing a peak-force scattering scanning near-field optical microscopy (PF-SNOM). Conventional scattering-type microscopy (s-SNOM) techniques uses tapping mode operation and lock-in detections that do not provide direct tomographic information with explicit tip-sample distance. Using a peak force scattering-type scanning near-field optical microscopy with a combination of peak force tapping mode and time-gated light detection, PF-SNOM enables direct sectioning of vertical near-field signals from a sample surface for both three-dimensional near-field imaging and spectroscopic analysis. PF-SNOM also delivers a spatial resolution of 5 nm and can simultaneously measure mechanical and electrical properties together with optical near-field signals.

Systems, apparatuses, and methods for realizing a peak-force scattering scanning near-field optical microscopy (PF-SNOM). Conventional scattering-type microscopy (s-SNOM) techniques uses tapping mode operation and lock-in detections that do not provide direct tomographic information with explicit tip-sample distance. Using a peak force scattering-type scanning near-field optical microscopy with a combination of peak force tapping mode and time-gated light detection, PF-SNOM enables direct sectioning of vertical near-field signals from a sample surface for both three-dimensional near-field imaging and spectroscopic analysis. PF-SNOM also delivers a spatial resolution of 5 nm and can simultaneously measure mechanical and electrical properties together with optical near-field signals.