Systems, apparatuses, and methods for realizing a peak-force scattering scanning near-field optical microscopy (PF-SNOM). Conventional scattering-type microscopy (s-SNOM) techniques uses tapping mode operation and lock-in detections that do not provide direct tomographic information with explicit tip-sample distance. Using a peak force scattering-type scanning near-field optical microscopy with a combination of peak force tapping mode and time-gated light detection, PF-SNOM enables direct sectioning of vertical near-field signals from a sample surface for both three-dimensional near-field imaging and spectroscopic analysis. PF-SNOM also delivers a spatial resolution of 5 nm and can simultaneously measure mechanical and electrical properties together with optical near-field signals.

To enhance the measurement sensitivity of a scanning probe microscope. In a cross sectional view, a cantilever includes a vertex portion that is a portion close to a sample and is covered by a metallic film, a ridge that is connected to the vertex portion and is covered by the metallic film, and an upper corner portion that is connected to the ridge. Here, the upper corner portion and a part of the ridge are portions to be irradiated with excitation light emitted from a light source of the scanning probe microscope.

To enhance the measurement sensitivity of a scanning probe microscope. In a cross sectional view, a cantilever includes a vertex portion that is a portion close to a sample and is covered by a metallic film, a ridge that is connected to the vertex portion and is covered by the metallic film, and an upper corner portion that is connected to the ridge. Here, the upper corner portion and a part of the ridge are portions to be irradiated with excitation light emitted from a light source of the scanning probe microscope.

Systems, apparatuses, and methods for realizing a peak-force scattering scanning near-field optical microscopy (PF-SNOM). Conventional scattering-type microscopy (s-SNOM) techniques uses tapping mode operation and lock-in detections that do not provide direct tomographic information with explicit tip-sample distance. Using a peak force scattering-type scanning near-field optical microscopy with a combination of peak force tapping mode and time-gated light detection, PF-SNOM enables direct sectioning of vertical near-field signals from a sample surface for both three-dimensional near-field imaging and spectroscopic analysis. PF-SNOM also delivers a spatial resolution of 5 nm and can simultaneously measure mechanical and electrical properties together with optical near-field signals.

Systems, apparatuses, and methods for realizing a peak-force scattering scanning near-field optical microscopy (PF-SNOM). Conventional scattering-type microscopy (s-SNOM) techniques uses tapping mode operation and lock-in detections that do not provide direct tomographic information with explicit tip-sample distance. Using a peak force scattering-type scanning near-field optical microscopy with a combination of peak force tapping mode and time-gated light detection, PF-SNOM enables direct sectioning of vertical near-field signals from a sample surface for both three-dimensional near-field imaging and spectroscopic analysis. PF-SNOM also delivers a spatial resolution of 5 nm and can simultaneously measure mechanical and electrical properties together with optical near-field signals.

The present disclosure relates to the technical field of microwave test, and discloses a method and a system for analyzing the spatial resolution of a microwave near-field probe and a microwave microscope equipped with the system, wherein in the method for analyzing the spatial resolution of the microwave near-field probe, a three-dimensional equipotential surface in a sample is drawn by using an electric field formula calculated by a quasi-static theory; an equivalent model of a probe sample is established by using finite element analysis software, so as to change material characteristics in the area outside the three-dimensional equipotential surface; by observing the influence of changing materials on the potential distribution in the sample, a near-field action range of the probe is determined, and the spatial resolution of the microwave near-field scanning microscope is analyzed and calculated.

The present disclosure relates to the technical field of microwave test, and discloses a method and a system for analyzing the spatial resolution of a microwave near-field probe and a microwave microscope equipped with the system, wherein in the method for analyzing the spatial resolution of the microwave near-field probe, a three-dimensional equipotential surface in a sample is drawn by using an electric field formula calculated by a quasi-static theory; an equivalent model of a probe sample is established by using finite element analysis software, so as to change material characteristics in the area outside the three-dimensional equipotential surface; by observing the influence of changing materials on the potential distribution in the sample, a near-field action range of the probe is determined, and the spatial resolution of the microwave near-field scanning microscope is analyzed and calculated.

An apparatus includes a support structure defining therein substantially parallel cavities extending from a first side of the support structure to a second side of the support structure. The apparatus also includes optical fiber cores each extending from the second side through a corresponding cavity and protruding axially at the first side. The axial protrusion tapers from a first diameter down to a second diameter. The apparatus additionally includes a light emitter optically connected to the optical fiber cores and configured to emit light thereinto. A cut-off size associated with the light is greater than or equal to the second diameter such that an evanescent electromagnetic wave is generated at the cut-off portion. The apparatus further includes light detectors each being optically connected at the second side to a corresponding optical fiber core and configured to measure an intensity of the light reflected from the cut-off portion.

An apparatus includes a support structure defining therein substantially parallel cavities extending from a first side of the support structure to a second side of the support structure. The apparatus also includes optical fiber cores each extending from the second side through a corresponding cavity and protruding axially at the first side. The axial protrusion tapers from a first diameter down to a second diameter. The apparatus additionally includes a light emitter optically connected to the optical fiber cores and configured to emit light thereinto. A cut-off size associated with the light is greater than or equal to the second diameter such that an evanescent electromagnetic wave is generated at the cut-off portion. The apparatus further includes light detectors each being optically connected at the second side to a corresponding optical fiber core and configured to measure an intensity of the light reflected from the cut-off portion.

A near-field detection system includes include an electric field generator configured to apply an electric field to an analysis sample, a probe configured to detect a near field that has passed through the analysis sample, a current detector connected to the probe, and a laser system irradiating a laser to each of the electric field generator and the probe. The probe includes a cantilever substrate, an antenna electrode on the cantilever substrate, an electromagnetic wave blocking layer exposing a sensing region of the cantilever substrate, the electromagnetic wave blocking layer including a conductive material, and an insulating layer interposed between the cantilever substrate and the electromagnetic wave blocking layer such that the insulating layer is between the antenna electrode and the electromagnetic wave blocking layer.