A method of performing atomic force microscopy (AFM) measurements, uses an ultrasound transducer to transmit modulated ultrasound waves with a frequency above one GHz from the ultrasound transducer to a top surface of a sample through the sample from the bottom surface of the sample. Effects of ultrasound wave scattering are detected from vibrations of an AFM cantilever at the top surface of the sample. Before the start of the measurements a drop of a liquid is placed on a top surface of the ultrasound transducer. The sample is placed on the top surface of the ultrasound transducer, whereby the sample presses the liquid in the drop into a layer of the liquid between the top surface of the ultrasound transducer and a bottom surface of the sample. The AFM measurements are started after a thickness of the layer of the liquid has stabilized.

A method of performing atomic force microscopy (AFM) measurements, uses an ultrasound transducer to transmit modulated ultrasound waves with a frequency above one GHz from the ultrasound transducer to a top surface of a sample through the sample from the bottom surface of the sample. Effects of ultrasound wave scattering are detected from vibrations of an AFM cantilever at the top surface of the sample. Before the start of the measurements a drop of a liquid is placed on a top surface of the ultrasound transducer. The sample is placed on the top surface of the ultrasound transducer, whereby the sample presses the liquid in the drop into a layer of the liquid between the top surface of the ultrasound transducer and a bottom surface of the sample. The AFM measurements are started after a thickness of the layer of the liquid has stabilized.

Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.

Atomic force microscopy system comprising an atomic force microscopy device and a substrate carrier having a carrier surface carrying a substrate. The substrate has a substrate main surface and a substrate scanning surface opposite the substrate main surface. The atomic force microscopy device comprises a scan head including a probe. The probe comprises a cantilever and a probe tip arranged on the cantilever. The atomic force device further comprises an actuator cooperating with at least one of the scan head or the substrate carrier for moving the probe tip and the substrate carrier relative to each other in one or more directions parallel to the carrier surface for scanning of the substrate scanning surface with the probe tip. A signal application actuator applies, during said scanning, an acoustic input signal to the substrate, said acoustic input signal generating a first displacement field in a first displacement direction only. A tip position detector monitors motion of the probe tip relative to the scan head during said scanning for obtaining an output signal. The tip position detector is arranged for monitoring motion of the probe tip only in a direction orthogonal to the displacement direction.

The present document relates to a method of performing defect detection on a self-assembled monolayer of a semiconductor element or semi-manufactured semiconductor element, using an atomic force microscopy system. The system comprises a probe with a probe tip, and is configured for positioning the probe tip relative to the element for enabling contact between the probe tip and a surface of the element. The system comprises a sensor providing an output signal indicative of a position of the probe tip. The method comprises: scanning the surface with the probe tip; applying an acoustic vibration signal to the element; obtaining the output signal indicative of the position of the probe tip; monitoring probe tip motion during said scanning for mapping the surface of the semiconductor element, and using a fraction of the output signal for mapping contact stiffness indicative of a binding strength.

The present document relates to a method of performing defect detection on a self-assembled monolayer of a semiconductor element or semi-manufactured semiconductor element, using an atomic force microscopy system. The system comprises a probe with a probe tip, and is configured for positioning the probe tip relative to the element for enabling contact between the probe tip and a surface of the element. The system comprises a sensor providing an output signal indicative of a position of the probe tip. The method comprises: scanning the surface with the probe tip; applying an acoustic vibration signal to the element; obtaining the output signal indicative of the position of the probe tip; monitoring probe tip motion during said scanning for mapping the surface of the semiconductor element, and using a fraction of the output signal for mapping contact stiffness indicative of a binding strength.

Method of tuning parameter settings for performing acoustic scanning probe microscopy for subsurface imaging, scanning probe microscopy system, and computer program product. This document relates to a method of tuning a scanning probe microscopy system. The method comprises: a) applying an acoustic vibration signal comprising a first frequency and a second frequency to a sample; b) at a first position of the probe tip, sweeping the first frequency across a first frequency range, and obtaining a first signal; c) at a second position of the probe tip, sweeping the first frequency across at least said first frequency range, and obtaining a second signal; d) analyzing the first and second signals to obtain a difference characteristic dependent on the first frequency. The first and second position are selected such that a subsurface structure of the sample at the first and second position is different.

Method of tuning parameter settings for performing acoustic scanning probe microscopy for subsurface imaging, scanning probe microscopy system, and computer program product. This document relates to a method of tuning a scanning probe microscopy system. The method comprises: a) applying an acoustic vibration signal comprising a first frequency and a second frequency to a sample; b) at a first position of the probe tip, sweeping the first frequency across a first frequency range, and obtaining a first signal; c) at a second position of the probe tip, sweeping the first frequency across at least said first frequency range, and obtaining a second signal; d) analyzing the first and second signals to obtain a difference characteristic dependent on the first frequency. The first and second position are selected such that a subsurface structure of the sample at the first and second position is different.

Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.

This document is directed at a method of manufacturing a semiconductor element, the method comprising manipulating a surface of a substrate using an atomic force microscope, the atomic force microscope including a probe, the probe including a cantilever and a probe tip, the substrate including at least one or more device features embedded underneath the surface. The method comprises: imaging the embedded device features, and identifying that a position of the probe tip of the atomic force microscope is aligned with the feature; and displacing the probe tip transverse to the surface for exerting a stress for performing the step of surface manipulation, as for example contact holes. Imaging is performed by applying and obtaining an acoustic signal to and from the substrate via the probe tip, including a first and a second signal component at different frequencies. The imaging and surface manipulation are performed using said same probe and probe tip.