A SPM head incorporates a probe and a cantilever on which the probe is mounted. The cantilever has a planar reflecting surface proximate a free end of the cantilever. The cantilever extends from a mechanical mount and a single-mode optical fiber is supported by the mechanical mount to provide a beam. A micromirror is mounted to reflect the beam substantially 90° to the planar reflecting surface.

A SPM head incorporates a probe and a cantilever on which the probe is mounted. The cantilever has a planar reflecting surface proximate a free end of the cantilever. The cantilever extends from a mechanical mount and a single-mode optical fiber is supported by the mechanical mount to provide a beam. A micromirror is mounted to reflect the beam substantially 90° to the planar reflecting surface.

An apparatus and method of operating an atomic force profiler (AFP), such as an AFM, using a feedforward control signal in subsequent scan lines of a large area sample to achieve large throughput advantages in, for example, automated applications.

An apparatus and method of operating an atomic force profiler (AFP), such as an AFM, using a feedforward control signal in subsequent scan lines of a large area sample to achieve large throughput advantages in, for example, automated applications.

The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.

The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.

The present invention provides an apparatus and a method for detecting the presence of and/or determining the amount of a label-free microRNA using an atomic force microscope. The method is extremely selective and/or ultrasensitive. In particular, the present invention provides a cantilever comprising a probe that selectively binds to a double strand of DNA/RNA hybrid complex. The probe comprises a hybrid binding domain (HBD) or a variant thereof.

The present invention provides an apparatus and a method for detecting the presence of and/or determining the amount of a label-free microRNA using an atomic force microscope. The method is extremely selective and/or ultrasensitive. In particular, the present invention provides a cantilever comprising a probe that selectively binds to a double strand of DNA/RNA hybrid complex. The probe comprises a hybrid binding domain (HBD) or a variant thereof.

A method of stimulating a MicroElectroMechanical Systems (MEMS) structure (e.g. a cantilever), and an optical sensor for use in such a method, using optical radiation pressure instead of electrostatic pressure, or the like. An optical pulse creates optical radiation pressure which stimulates movement of the MEMS structure and then movement of the MEMS structure may be measures. An interrogating light may be input after the optical pulse to measure movement of the MEMS structure. Advantageously, the same light source can be utilised to stimulate movement of the MEMS structure and to measure movement of the MEMS structure.

A method of stimulating a MicroElectroMechanical Systems (MEMS) structure (e.g. a cantilever), and an optical sensor for use in such a method, using optical radiation pressure instead of electrostatic pressure, or the like. An optical pulse creates optical radiation pressure which stimulates movement of the MEMS structure and then movement of the MEMS structure may be measures. An interrogating light may be input after the optical pulse to measure movement of the MEMS structure. Advantageously, the same light source can be utilised to stimulate movement of the MEMS structure and to measure movement of the MEMS structure.