A torsional probe for a metrology instrument includes a cantilever coupled to a support structure via a torsion bar. The cantilever, support structure, and arms of torsion bar have substantially the same thickness.

A detector device is presented for use in a surface probing system. The detector device comprises an integral semiconductor structure configured to define a cantilever and tip probe assembly, comprising at least one tip formed on the cantilever, wherein an apex portion of said at least one tip is configured as an apertured photodetector comprising a layered structure formed with an aperture of subwavelength dimensions and defining at least one depletion region and an electrical circuit, said subwavelength aperture allowing collection of evanescent waves created at a surface region and interaction of collected evanescent waves with the at least one depletion region thereby causing direct conversion of the collected evanescent waves into electric signals being read by the electrical circuit within said tip apex portion, said integral semiconductor structure being thereby capable of concurrently monitoring topographic and optical properties of the surface being scanned by the tip.

A detector device is presented for use in a surface probing system. The detector device comprises an integral semiconductor structure configured to define a cantilever and tip probe assembly, comprising at least one tip formed on the cantilever, wherein an apex portion of said at least one tip is configured as an apertured photodetector comprising a layered structure formed with an aperture of subwavelength dimensions and defining at least one depletion region and an electrical circuit, said subwavelength aperture allowing collection of evanescent waves created at a surface region and interaction of collected evanescent waves with the at least one depletion region thereby causing direct conversion of the collected evanescent waves into electric signals being read by the electrical circuit within said tip apex portion, said integral semiconductor structure being thereby capable of concurrently monitoring topographic and optical properties of the surface being scanned by the tip.

An atomic force microscopy device arranged for determining sub-surface structures in a sample comprises a scan head with a probe including a flexible carrier and a probe tip arranged on the flexible carrier. Therein an actuator applies an acoustic input signal to the probe and a tip position detector measures a motion of the probe tip relative to the scan head during scanning, and provides an output signal indicative of said motion, to be received and analyzed by a controller. At least an end portion of the probe tip tapers in a direction away from said flexible carrier towards an end of the probe tip. The end portion has a largest cross-sectional area Amax at a distance Dend from said end, the square root of the largest cross-sectional area Amax is at least 100 nm and the distance Dend is in the range of 0.2 to 2 the value of said square root.

Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning, tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.

Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning, tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.

The disclosure is related to a method for performing SPM measurements, wherein a sample is attached to a cantilever and scanned across a tip. The tip is one of several tips present on a substrate comprising at least two different types of tips on its surface, thereby enabling performance of multiple SPM measurements requiring a different type of tip, without replacing the cantilever. The at least two different types of tips are different in terms of their material, in terms of their shape or size, and/or in terms of the presence or the type of active or passive components mounted on or incorporated in the substrate, and associated to tips of one or more of the different types. The disclosure is equally related to a substrate comprising a plurality of tips suitable for use in the method of the disclosure.

The disclosure is related to a method for performing SPM measurements, wherein a sample is attached to a cantilever and scanned across a tip. The tip is one of several tips present on a substrate comprising at least two different types of tips on its surface, thereby enabling performance of multiple SPM measurements requiring a different type of tip, without replacing the cantilever. The at least two different types of tips are different in terms of their material, in terms of their shape or size, and/or in terms of the presence or the type of active or passive components mounted on or incorporated in the substrate, and associated to tips of one or more of the different types. The disclosure is equally related to a substrate comprising a plurality of tips suitable for use in the method of the disclosure.

A large radius probe for a surface analysis instrument such as an atomic force microscope (AFM). The probe is microfabricated to have a tip with a hemispherical distal end or apex. The radius of the apex is the range of about a micron making the probes particularly useful for nanoindentation analyses. The processes of the preferred embodiments allow such large radius probes to be batch fabricated to facilitate cost and robustness.

A large radius probe for a surface analysis instrument such as an atomic force microscope (AFM). The probe is microfabricated to have a tip with a hemispherical distal end or apex. The radius of the apex is the range of about a micron making the probes particularly useful for nanoindentation analyses. The processes of the preferred embodiments allow such large radius probes to be batch fabricated to facilitate cost and robustness.