A plurality of test pads are formed on a first substrate or a second substrate. A plurality of first solder joints are reserved on a first surface of the first substrate, and each of the first solder joints is coupled to at least a test pad or to another first solder joint through at least a first trace. A plurality of second solder joints are reserved on a second surface of the second substrate. Each of the second solder joints is coupled to at least a test pad or to another second solder joint through at least a second trace. A plurality of dummy solder balls are formed between the first solder joints and the second solder joints. Probes are coupled to the test pads to measure circuit characteristics between the test pads.

Probe systems for testing a device under test are disclosed herein. The probe systems include a platen that defines an upper surface, an opposed lower surface, and a platen aperture. The probe systems also include a chuck that defines a support surface configured to support a device under test. The probe systems further include a lower enclosure extending from the lower surface of the platen and an upper enclosure extending from the upper surface of the platen. The upper enclosure includes a side wall that defines a side wall aperture, and the side wall and the platen define an intersection angle of at least 30 degrees and at most 60 degrees. The probe systems also include a manipulator, a probe shaft arm, a probe assembly, a test head, and an electrical conductor.

A test lead for an electrical meter is provided. The test lead comprises a flexible elongate member comprising a current sensing coil at least partially disposed about a flexible core along the length of the member. A first connector is disposed at one end of the member for coupling a respective end of the current sensing coil to a test port of an electrical meter. A second connector is disposed at an opposing end of the member for coupling a respective end of the current sensing coil to an electrically conductive member, to provide an electrical path, via the sensing coil, from the electrically conductive member to the first connector.

A test lead for an electrical meter is provided. The test lead comprises a flexible elongate member comprising a current sensing coil at least partially disposed about a flexible core along the length of the member. A first connector is disposed at one end of the member for coupling a respective end of the current sensing coil to a test port of an electrical meter. A second connector is disposed at an opposing end of the member for coupling a respective end of the current sensing coil to an electrically conductive member, to provide an electrical path, via the sensing coil, from the electrically conductive member to the first connector.

Provided is a current sensing device including an electrical conductor made of electrically conductive metal; and voltage sensing terminals provided on the electrical conductor. Each voltage sensing terminal is formed by inserting bar-like metal into a through-hole formed in the electrical conductor, and the voltage sensing terminal includes a first terminal portion that is stored in the through-hole and a second terminal portion that protrudes from the through-hole.

A testing method for testing wafer level chip scale packages formed on a wafer including a wafer substrate and spaced-apart contact electrodes disposed on the wafer substrate, includes: providing a test device including a probe card formed with a plurality of parallel probe holes having a uniform cross-sectional dimension, and a plurality of probes respectively received in the probe holes and extending respectively in the probe holes along axes of the probe holes; and electrically connecting the contact electrodes to the probes. A distance between the axes of two adjacent ones of the probe holes is equal to a smallest spacing between two adjacent ones of the contact electrodes and is not greater than 0.5 mm.

Provided is a jig enabling detachment and attachment of a probe head from and to an electric connecting apparatus without using a special holding device. A jig (50) is applied to an electric connecting apparatus (10) electrically connecting a device under test to a testing apparatus for the device under test. The electric connecting apparatus includes a wiring substrate (22) and a probe head (28) secured to the wiring substrate with a plurality of set screws (26) and including a plurality of probes (34) made of a magnetic body. The jig (50) includes a plate (52) and a magnet (54) attached to the plate. The plate can detachably be attached to the probe head, and the magnet is opposed to a lower end portion (34b) of each of the probes.

A contact-making device (10) is used for a resistance measurement on a test object (30). The test object (30) comprises a threaded hole (31), which has an internal thread (32). The contact-making device (10) is designed to be mechanically coupled to the internal thread (32) of the threaded hole (31). The contact-making device (10) comprises a first contact (11) and a second contact (12), in order to make electrical contact with the test object (30) at, at least, two points when the contact-making device (10) is mechanically coupled to the internal thread (32). The first contact (11) and the second contact (12) are electrically insulated from one another by an insulating material (15-17) in the contact-making device (10).

The present disclosure discloses a conductivity sensor including a basic body of sintered ceramic having at least two cavities disposed on a frontal face and a metal electrodes disposed in each cavity. Each electrode is about one fifth the length of the basic body. Electrical cables extend from a rear face of the basic body into holes in each cavity and contact the electrodes. A solder paste or an electrically conductive adhesive disposed in each hole connects each cable with the respective metal electrode electrically and mechanically.

A semiconductor wafer evaluation apparatus brings a contact maker (mercury liquefied at room temperature), as a Schottky electrode, into contact with a semiconductor wafer, intermittently applies a voltage from a pulse power supply, and evaluates the state (kinds, density) of point defects by an evaluation means based on the status of the electrostatic capacity of the semiconductor wafer. In this manner, the state (kinds, density) of the point defects in the plane of a large-diameter semiconductor wafer is directly evaluated using a large table.