A probe for use with a measuring instrument. The probe is a wired probe assembly comprising a housing with an integrated user interface. The wired probe assembly further comprises a measuring component for contacting a device to be measured and a cord component connecting the measuring component to the measuring instrument. The user interface can indicate a status of an electrical parameter and allow an operator to provide inputs remotely to the measuring device.

The present invention aims to reduce the leakage current that flows when measuring a high voltage and includes: a voltage detector that detects a voltage and outputs a detection voltage; a current supplier that supplies a measurement current across a pair of input terminals via a protective resistor; and a processor that executes a voltage measurement process, which measures the voltage based on data indicating the detection voltage, and a resistance measurement process, which measures a resistance connected between the input terminals based on the voltage and the current. A first switch is connected in parallel to the protective resistor and the processor executes the voltage measurement process in a state where the first switch has been set open to measure the terminal voltage, and executes the resistance measurement process by setting the first switch shorted when the voltage is equal to or below the reference voltage value.

The present invention aims to reduce the leakage current that flows when measuring a high voltage and includes: a voltage detector that detects a voltage and outputs a detection voltage; a current supplier that supplies a measurement current across a pair of input terminals via a protective resistor; and a processor that executes a voltage measurement process, which measures the voltage based on data indicating the detection voltage, and a resistance measurement process, which measures a resistance connected between the input terminals based on the voltage and the current. A first switch is connected in parallel to the protective resistor and the processor executes the voltage measurement process in a state where the first switch has been set open to measure the terminal voltage, and executes the resistance measurement process by setting the first switch shorted when the voltage is equal to or below the reference voltage value.

Embodiments relate to sensing a current provided by a power supply circuit. The current sensing circuit includes a sense transistor for sensing the current provided by a main transistor, a driver for controlling a bias provided to the sense transistor and the main transistor, and a sense resistor for converting the sensed current to a voltage value. Moreover, the current sensing circuit includes a controller that modifies at least one of: (a) a resistance of the main transistor by adjusting the bias voltage provided by the driver, (b) a gain ratio between a load current and a sensing current by adjusting a number of individual devices that are active in the sense transistor, and (c) a resistance of the sense resistor.

A control apparatus that controls a resolution according to a signal of a motor is provided. The apparatus comprises a measurement unit configured to measure a voltage and an electric current of the signal, an amplification unit comprising a first variable resistor, and a micro control unit (MCU) comprising first, second, and third lookup tables. The amplification unit is configured to amplify the signal according to a first gain corresponding to a resistance value and generate an output signal. The MCU is configured to set the resolution, divide the signal, generate the output signal, set a measurement range corresponding to a first gain, and control the resistance value. The MCU is configured to control the resistance value according to a comparison between the set measurement range, comprising a range of voltages proportional to a magnitude of the gain, and a range of possible measurement set corresponding to the signal.

A radio frequency (RF) power detector with a variable threshold for dynamic power detection. The RF power detector includes stacked transistors of an input stage and stacked transistors of an output stage. A DC bias voltage plus an input RF signal are applied to a control electrode on the input stage and the same DC bias voltage plus an additional DC bias voltage are applied to a control electrode on the output stage. Depending on the input power of the RF signal, a current is generated in the output stage, and the output capacitor is either charged or discharged, and the output capacitor voltage is compared to a threshold to generate an output signal. The output signal may be averaged over time by two capacitors, miller capacitor and output capacitor. The output voltage of the RF power detector is an integration over time of the input RF power.

A radio frequency (RF) power detector with a variable threshold for dynamic power detection. The RF power detector includes stacked transistors of an input stage and stacked transistors of an output stage. A DC bias voltage plus an input RF signal are applied to a control electrode on the input stage and the same DC bias voltage plus an additional DC bias voltage are applied to a control electrode on the output stage. Depending on the input power of the RF signal, a current is generated in the output stage, and the output capacitor is either charged or discharged, and the output capacitor voltage is compared to a threshold to generate an output signal. The output signal may be averaged over time by two capacitors, miller capacitor and output capacitor. The output voltage of the RF power detector is an integration over time of the input RF power.

Embodiments relate to sensing a current provided by a power supply circuit. The current sensing circuit includes a sense transistor for sensing the current provided by a main transistor, a driver for controlling a bias provided to the sense transistor and the main transistor, and a sense resistor for converting the sensed current to a voltage value. Moreover, the current sensing circuit includes a controller that modifies at least one of: (a) a resistance of the main transistor by adjusting the bias voltage provided by the driver, (b) a gain ratio between a load current and a sensing current by adjusting a number of individual devices that are active in the sense transistor, and (c) a resistance of the sense resistor.

The invention concerns a method by which an electrical raw input signal (102) is reshaped to a formatted electrical input signal (104) according to the input requirements of a signal processing device (106). According to the method the following steps are conducted: feeding a parameter to a programmable device (108) according to the expected raw input signal format in order that, the programmable device (108) may deliver one or more output control signals (110,111) in dependency of the parameter whereby, each control signal (110,111) is served at each its switching device (Q10-A; Q10-B) provided in a signal line between the raw input signal (102) and ground potential (114) wherein, the control signals (110,111) allow switching devices (Q10-A; Q10-B) to connect the raw input signal (102) to ground potential (114) through a resistor of predetermined size (R32, R28), to create the formatted input signal (4) at the resistor (R32, R28).

An object is to provide a new electronic control unit that can improve detection accuracy of a sense current even in a region where the current value of the sense current is small. Provided is a sense current detection unit including a plurality of sense transistors that have different current flow rates and that are connected to current output transistors controlling a current flowing in a coil load. The current in the sense current detection unit is input to an analog/digital converter, and the current value of the current flowing in the sense current detection unit is converted into a digital value. The current value of the current flowing in the sense current detection unit is increased through a combination or a selection of the plurality of sense transistors of the sense current detection unit in a region where the current value of the main current of the current output transistors is small compared to a region where the current value of the main current is large.