A semiconductor substrate includes a first portion and a second portion. The first portion of the substrate has a first deformation-stress sensor capable of supplying a first stress signal. The second portion of the substrate has a second deformation-stress sensor capable of supplying a second stress signal. The first stress signal and second stress signal are processed by a circuit to produce a compensation signal. The compensation signal is applied in feedback to one of the first and second stress signals to compensate for variations induced in said one of the first and second stress signals by stresses in the semiconductor substrate.

A semiconductor substrate includes a first portion and a second portion. The first portion of the substrate has a first deformation-stress sensor capable of supplying a first stress signal. The second portion of the substrate has a second deformation-stress sensor capable of supplying a second stress signal. The first stress signal and second stress signal are processed by a circuit to produce a compensation signal. The compensation signal is applied in feedback to one of the first and second stress signals to compensate for variations induced in said one of the first and second stress signals by stresses in the semiconductor substrate.

A branch current monitor that includes reconfiguration.

A branch current monitor that includes reconfiguration.

In a sensor device, a bias circuit includes a bias voltage generation circuit, a regulator circuit, an impedance calculation circuit, and a bias voltage correction circuit. The bias voltage generation circuit generates a bias voltage required to operate the bridge circuit. The regulator circuit applies the bias voltage to the bridge circuit and monitors a bias current supplied to the bridge circuit. The impedance calculation circuit receives a value of the bias voltage and a value of the bias current and calculates an impedance of the bridge circuit. Based on the impedance, the bias voltage correction circuit causes the bias voltage to be corrected to a voltage that compensates for a change in characteristics of the bridge circuit.

In a sensor device, a bias circuit includes a bias voltage generation circuit, a regulator circuit, an impedance calculation circuit, and a bias voltage correction circuit. The bias voltage generation circuit generates a bias voltage required to operate the bridge circuit. The regulator circuit applies the bias voltage to the bridge circuit and monitors a bias current supplied to the bridge circuit. The impedance calculation circuit receives a value of the bias voltage and a value of the bias current and calculates an impedance of the bridge circuit. Based on the impedance, the bias voltage correction circuit causes the bias voltage to be corrected to a voltage that compensates for a change in characteristics of the bridge circuit.

A current sensor includes a first busbar, a second busbar, and a third busbar, a first sensor unit, a second sensor unit and a calculating unit. The first, second and third busbars extend in a first direction apart from each other and are arranged in a second direction orthogonal to the first direction. Three-phase alternating currents flow through the first, second and third busbars. The first sensor unit is located between remaining two busbars other than one busbar to be measured among the first, second and third busbars. The second sensor unit measures one of the remaining two busbars other than the one busbar to be measured and is located between the one busbar to be measured and the other one of the remaining two busbars. The calculating unit calculates current values of the first, second and third busbars from output values of the first and second sensor units.