Each of multiple plasma processing chambers has an RF power input line connected to receive RF power from a common RF power source. An RF control module is connected to distribute RF power from the common RF power source to the RF power input lines of the multiple chambers. A voltage sensor and a current sensor are connected to a corresponding RF power input line. Each voltage sensor measures an instantaneous electrical voltage present on its RF power input line. Each current sensor measures an instantaneous electrical current present on its RF power input line. An analog multiplier module is connected to receive as inputs the instantaneous electrical voltage from its corresponding voltage sensor and the instantaneous electrical current from its corresponding current sensor. Each analog multiplier module generates an output signal that indicates an instantaneous RF power present on the corresponding RF power input line of the corresponding chamber.

The present invention relates generally to the field of sensors for beam imaging and, in particular, to a new and useful beam imaging sensor for use in determining, for example, the power density distribution of a beam including, but not limited to, an electron beam or an ion beam. In one embodiment, the beam imaging sensor of the present invention comprises, among other items, a circumferential slit that is either circular, elliptical or polygonal in nature. In another embodiment, the beam imaging sensor of the present invention comprises, among other things, a discontinuous partially circumferential slit. Also disclosed is a method for using the various beams sensor embodiments of the present invention.

The present disclosure relates to a VI sensor and a method for monitoring a plasma state, and includes a collector configured to collect, as sensing data, RF voltages, RF currents, incident wave powers, and reflected wave powers generated during a plasma process, and a processor configured to train an artificial intelligence algorithm by applying the sensing data and setting values of plasma equipment identified at the time when the sensing data is generated, and to derive prediction data capable of monitoring a plasma state and a plasma process state using the trained artificial intelligence algorithm, and other embodiments are also applicable.

An amplifier device for receiving currents, comprising a first current path for measuring smaller currents of less than 100 pA, an input amplifier device included in the first current path, having at least one first amplifier, an output, an inverting input, a first feedback path connecting the output to the inverting input, and a feedback element included in the first feedback path, wherein the first amplifier has at least one protective element, a second current path for measuring larger currents with a maximum current of at least 10 times the current to be received in the first current path, characterized in that at least one of the protective elements of the amplifier is part of the second current path.