A system for controlling the impact of process and temperature in passive signal detector includes a voltage level detector, a first transistor with a drain electrically connected to a first input of the voltage level detector, and a second transistor with a drain electrically connected to a second input of the voltage level detector. The first transistor has a threshold voltage of a first voltage value. The threshold voltage corresponds to a minimum gate-to-source voltage to create a conducting path between source and drain terminals of a transistor. The second transistor has a threshold voltage of the first voltage value. An offset voltage is applied across a gate of the first transistor and a source of the second transistor, and applied across a gate of the second transistor and a source of the first transistor. A difference between a threshold voltage and the offset voltage is constant.

A circuit for measurement of a voltage comprises a passive sensing element configured to be coupled between a measurement point and a reference point. The passive sensing element has a voltage-dependent impedance. Further, the circuit comprises an impedance detector and a reference circuit. The impedance detector is configured to detect the impedance of the passive sensing element by providing a probe signal to the passive sensing element and evaluating a response to the probe signal from the passive sensing element and a reference response from the reference circuit. Further, the circuit comprises a converter circuit configured to convert a result of evaluating the response and the reference response to a voltage level information.

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, a device configured to monitor electrical overstress (EOS) events includes a pair of spaced conductive structures configured to electrically arc in response to an EOS event, wherein the spaced conductive structures are formed of a material and have a shape such that arcing causes a detectable change in shape of the spaced conductive structures, and wherein the device is configured such that the change in shape of the spaced conductive structures is detectable to serve as an EOS monitor.

A current detection circuit includes an N-type first transistor configured to supply a first current to an output terminal, an N-type second transistor that constitutes a current mirror circuit with the first transistor, a comparison circuit configured to output a detection result showing whether or not the first current is larger than a predetermined threshold based on a current flowing through the second transistor, a ground fault detection circuit configured to output a result detecting a ground fault of the output terminal, and a logical circuit configured to output a current detection signal showing whether or not the first current is an overcurrent based on the detection result of the comparison circuit and the ground fault detection result of the ground fault detection circuit.

A technique of reducing errors in measurement of a charging/discharging current in a battery module including a plurality of secondary batteries. A current measuring apparatus according to the present disclosure is included in a battery pack including a bus bar on a charging/discharging path to measure a current flowing through the charging/discharging path.

The present invention provides a voltage monitoring apparatus capable of stable operation even in a low-voltage region.

The voltage monitoring apparatus (1) includes: an inner voltage generating portion (40), lowering an input voltage (VIN) to generate an inner voltage (Vreg); an input voltage monitoring portion (30), receiving a power supply from an output terminal of the inner voltage generating portion (40) to operate; a switch portion (50), disposed between an input terminal of the input voltage (VIN) and the output terminal of the inner voltage generating portion (40); and a switch driving portion (60), turning on the switch portion (50) when the input voltage (VIN) is lower than a threshold voltage (for example, Vy<Vref), and turning off the switch portion (50) when the input voltage (VIN) is higher than the threshold voltage (for example, Vy>Vref). Furthermore, the threshold voltage is preferably set as, for example, turning off the switch portion (50) upon the inner voltage generating portion (40) changing to a state capable of outputting the inner voltage (Vreg) that is at least higher than a minimum operating voltage of the input voltage monitoring portion (30).

Disclosed are an apparatus and method of diagnosing a failure of a switch element used to switch on or off external connection of a battery. The apparatus according to the present disclosure is an apparatus for diagnosing a failure of a switch element provided on a first line between a first electrode of a battery and a first external terminal, the apparatus including a current measuring unit configured to measure a current flowing through a second line between a second electrode of the battery and a second external terminal, a diagnosis resistor and a diagnosis switch provided on a third line to connect an outer node of the switch element and an outer node of the current measuring unit, and connected to each other in series, and a controller configured to apply a control signal for turning on or off the switch element, to the switch element, to turn on the diagnosis switch after the control signal is applied and then receive a measured current value from the current measuring unit, to determine a level of the current flowing through the second line, by using the measured current value, and to diagnose a failure of the switch element by comparing the current level to a reference current level.

A voltage detector includes a first voltage detection circuit, a second voltage detection circuit, and a voltage divider circuit having a first node for providing a first divided voltage, and a second node for providing a second divided voltage. The second voltage detection circuit has a comparator circuit including a first input end connected to the first node and a second input end connected to a reference voltage. The first voltage detection circuit has a first NMOS transistor including a gate to which the second divided voltage is applied, and a constant current source with one end connected to the first NMOS transistor. The first NMOS transistor is configured to turn on in response to the second divided voltage being higher than a second threshold voltage and turn off in response to the second divided voltage being lower than the second threshold voltage.

Techniques for autozero to an offset value for a slope detector for voltage droop monitoring are described herein. An aspect includes generating a first offset voltage by a circuit. Another aspect includes generating a second offset voltage by the circuit, the second offset voltage being distinct from the first offset voltage. Another aspect includes, based on a first comparator of the circuit entering an autozero mode, connecting a first terminal of the first comparator to the first offset voltage. Another aspect includes connecting a second terminal of the first comparator to the second offset voltage. Yet another aspect includes performing an autozero operation in the first comparator, wherein a trip point of the first comparator is set to a difference between the first offset voltage and the second offset voltage by the autozero operation.

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, a device configured to monitor electrical overstress (EOS) events includes a pair of spaced conductive structures configured to electrically arc in response to an EOS event, wherein the spaced conductive structures are formed of a material and have a shape such that arcing causes a detectable change in shape of the spaced conductive structures, and wherein the device is configured such that the change in shape of the spaced conductive structures is detectable to serve as an EOS monitor.