A current sensor assembly can include: a coil structure having a first coil and a second coil connected in series, the coil structure configured to generate a differential magnetic field responsive to an electrical current passing through the first and second coils; a first magnetic field sensing element disposed proximate to the first coil and operable to generate a first signal responsive to the differential magnetic field passing through the first magnetic field sensing element in a first direction; a second magnetic field sensing element disposed proximate to the second coil and operable to generate a second signal responsive to the differential magnetic field passing through the second magnetic field sensing element in a second direction; and a circuit operable to subtract the first and second signals to generate a differential signal proportional to the electrical current.

Circuit test devices and methods are provided. The method includes measuring a voltage between first and second conductor points (CPs) of a circuit under test (CUT), and determining if the measured voltage is less than a low voltage threshold value (LVTV) indicative of electrical continuity (EC) between the first and second CPs. In response to determining that the measured voltage is less than the LVTV, the method includes: transmitting a test signal (TS) to the first or second CP, and determining if the test signal is received after being transmitted. In response to determining that the TS is received, a presence of EC between the first and second conductor points is reported, and in response to determining that the TS is not received, absence of EC between the first and second CPs, or a lack of electrical contact between the VMC and the first and/or second CP(s), is reported.

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.

A self-referenced on-die voltage droop detector generates a reference voltage from the supply voltage of an integrated circuit's power distribution network, and compares this reference voltage to the transient supply voltage in order to detect voltage droops. The detector responds to detected occurrences of voltage droop with low latency by virtue of being located on-die. Also, by generating the reference voltage from the integrated circuit's power domain rather than using a separate reference voltage source, the detector does not introduce noise and distortion associated with a separate power domain.

A device includes a power control analog subsystem of a universal serial bus-power delivery (USB-PD) compatible power supply device. The power control analog subsystem includes a programmable current sensing circuit and a current sense resistor coupled to the power control analog subsystem. The power control analog subsystem is configured to concurrently compare a current flow through the current sense resistor with at least three different reference values, e.g., compare a sensed voltage with at least three different reference voltages.

Embodiments of the present disclosure relate to a multi-function circuit. The circuit comprises a low side circuit that is comprised with a first set of enhancement mode transistors. The half bridge circuit also includes a high side circuit that is comprised of a second set of transistors. Each of the enhancement mode transistors of the first set and second set of enhancement mode transistors are Gallium Nitride (GaN) transistors. In some embodiments, the GaN transistors are High Electron Mobility Transistors (HEMTs). In additional embodiments, the GaN transistors are configured and operated as saturated switches. In further embodiments, the half bridge circuit is designed as a discrete circuit. Additionally, each of the first set and second set of transistors, diodes, resistors, and all passive elements are discrete components arranged to form a half bridge circuit. In fact, the entire half bridge circuit is built from discrete components.

The present disclosure provides a semiconductor integrated circuit. The semiconductor integrated circuit includes a set pin. An external resistor and an external capacitor are connected in parallel between the set pin and an external fixed voltage line. A parameter acquisition circuit is connected to the set pin to obtain a first parameter and a second parameter defined by a resistive value of the external resistor and a capacitive value of the external capacitor.

Disclosed are an apparatus and method of diagnosing a failure of a switch element used to switch on or off external connection of a battery. The apparatus according to the present disclosure is an apparatus for diagnosing a failure of a switch element provided on a first line between a first electrode of a battery and a first external terminal, the apparatus including a current measuring unit configured to measure a current flowing through a second line between a second electrode of the battery and a second external terminal, a diagnosis resistor and a diagnosis switch provided on a third line to connect an outer node of the switch element and an outer node of the current measuring unit, and connected to each other in series, and a controller configured to apply a control signal for turning on or off the switch element, to the switch element, to turn on the diagnosis switch after the control signal is applied and then receive a measured current value from the current measuring unit, to determine a level of the current flowing through the second line, by using the measured current value, and to diagnose a failure of the switch element by comparing the current level to a reference current level.

A load detection circuit includes a variable current source circuit having a first input connected to a power supply, a second input, and a first output connected to an output load; a switched capacitor circuit having a third input connected to an external voltage reference signal, a fourth input connected to the first output of the variable current source, a fifth input connected to ground, a sixth input, and a second output; a comparator having a seventh input connected to the second output of the switched capacitor circuit, an eighth input connected to the first output of the variable current source, and a third output; an edge detector having a ninth input connected to the third output of the comparator, and a fourth output; and a digital controller having a fifth output connected to the variable current source and a sixth output connected to the switched capacitor circuit.

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, a device configured to monitor electrical overstress (EOS) events includes a pair of spaced conductive structures configured to electrically arc in response to an EOS event, wherein the spaced conductive structures are formed of a material and have a shape such that arcing causes a detectable change in shape of the spaced conductive structures, and wherein the device is configured such that the change in shape of the spaced conductive structures is detectable to serve as an EOS monitor.