This abnormality detection circuit is configured so as to detect abnormality of a first half bridge including a first switching element and a second switching element. The abnormality detection circuit includes: a series circuit of a first switch and a first resistor provided between a first node which is a connection node for the first switching element and the second switching element and a second node configured so as to have a first constant voltage applied thereto; and a first comparator configured so as to compare a first reference voltage and a voltage corresponding to the voltage of the first node.

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.

The present disclosure relates generally to control of systems with modular devices. In one embodiment, a device is disclosed, comprising: a plurality of electrical contacts; and at least one processor, wherein the plurality of electrical contacts are configured to be coupled to one of: a first voltage source or a second voltage source, wherein the at least one processor is configured to determine an identification (ID) value for the device by determining voltage values that are based on a coupling configuration of the plurality of electrical contacts.

An apparatus and method for limiting inrush current to an end device provides an alternating current (AC) to the end device via a power cord including first and second current carrying conductors. A voltage sensor enclosed by a housing attached to a power cord and connected to the conductors senses an input voltage. A current sensor within the housing senses an inrush current via the first conductor. A microcontroller unit (MCU) within the housing receives the sensed input voltage and inrush current. Based on the sensed input voltage, the MCU determines a voltage drop across a negative temperature coefficient (NTC) thermistor serially connected (with a switching device) to the first conductor. When the sensed inrush current and/or the sensed input voltage reaches a threshold level, the MCU engages the NTC thermistor to limit inrush current by opening the switching device.

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes;

An abnormality detection device includes: first resistance elements; a second resistance element; and a control device. The control device includes one or more processors, and one or more memories coupled to the processors. The processor is configured to execute processes including deriving a first current value of the current flowing through one or more the first resistance elements among the multiple first resistance elements, deriving a second current value of the current flowing through the second resistance element, and determining whether there is a characteristic abnormality in the first resistance element, based on a comparison result between the first current value and the second current value.

An overload detector circuit includes first logic circuitry and second logic circuitry. The first logic circuitry to receive a bitstream from a sigma-delta modulator (SDM) of a receiver channel, the first logic circuitry to compare a current bit of the bitstream with a previous bit of the bitstream and output an indication of as match. The second logic circuitry to track a number of consecutive matches in the bitstream and output an indication of a first overload condition responsive to the number of consecutive matches satisfying a first threshold criterion.

An overcurrent monitoring method which can be implemented by computer program instructions executed by one or more hardware processors. In some embodiments, the method can include providing in a semiconductor device tester a device under test, controlling testing signals to the device under test by operation of an electromechanical switch electrically coupled to the device under test, monitoring for an overcurrent condition in the electromechanical switch by directly measuring a testing signal from the electromechanical switch during the operation thereof using a current measurement sensor directly serially connected to the electromechanical switch and determining whether the overcurrent condition has been detected using a detection circuitry electrically coupled to the current measurement sensor. The method can make use of monitoring circuitry to generate excess current signals.

A power supply supplies power to a load connected between high-voltage and low-voltage power terminals. A high-side current-sensing unit connected to the high-voltage power terminal senses a first output current that the power supply pours to the load, generating a high-side sensing signal. A low-side current-sensing unit connected to the low-voltage power terminal senses a second output current that the power supply drains from the load, generating a low-side sensing signal. One of the high-side current-sensing unit and the low-side current-sensing unit includes a power switch. A power control circuit converts the high-side sensing signal and the low-side sensing signal into high-side sensing value and low-side sensing value respectively, compares the high-side sensing value with the low-side sensing value, and turns OFF the power switch if a difference between the high-side sensing value and the low-side sensing value reaches a predetermined abnormal threshold.