G01R27/26

CAPACITANCE SENSING SYSTEMS AND METHODS
20220334160 · 2022-10-20 ·

Systems, methods, and apparatuses for measuring capacitance of a load. An apparatus includes a ground connector, an output connector configured to couple to the load, and a time-varying signal source configured to inject a time-varying voltage signal onto a conduction path between the ground connector and the output connector. A DC power source is configured to apply a DC offset to the time-varying voltage signal, and a current monitor is configured to measure time-varying current in the conduction path. A capacitance module is configured to determine the capacitance based upon at least one of the time-varying current and a frequency of the time-varying voltage signal.

CAPACITANCE SENSING SYSTEMS AND METHODS
20220334160 · 2022-10-20 ·

Systems, methods, and apparatuses for measuring capacitance of a load. An apparatus includes a ground connector, an output connector configured to couple to the load, and a time-varying signal source configured to inject a time-varying voltage signal onto a conduction path between the ground connector and the output connector. A DC power source is configured to apply a DC offset to the time-varying voltage signal, and a current monitor is configured to measure time-varying current in the conduction path. A capacitance module is configured to determine the capacitance based upon at least one of the time-varying current and a frequency of the time-varying voltage signal.

ELECTROMAGNETIC NON-DESTRUCTIVE QUALITY TESTING METHOD, AND TESTING CIRCUIT AND SYSTEM THEREFOR

A first-order resistor-inductor (RL) circuit is allowed to alternate a direct-current excitation response and a zero-input response so that a direct-current magnetic field generated by an inductor magnetizing coil changes alternately in magnetic field intensity with a change in magnitude of current. After a testing object is placed in the direct-current magnetic field changing alternately in magnetic field intensity, the testing object is magnetized and also causes a change in inductance of the magnetic field. Whether a change occurs in electromagnetic properties of the testing object can be determined and detected by detecting the inductance change of the magnetizing coil or detecting electrical characteristic change caused by the inductance change of the magnetizing coil, thereby determining whether quality defects such as steel wire cracks and wire breakage in a steel wire rope occur. Alternatively, the properties such as a sectional area or a zinc layer thickness can be analyzed.

NON-INVASIVE CONTINUOUS CAPACITANCE LEVEL DETECTOR

The present invention relates to a non-invasive Capacitance Level Detector useful for continuous detection of the level and/or mass of a non-conductive or weakly-conductive bulk material in a vessel, and methods of using the detector.

APPARATUS FOR DETECTING STACKING DIRECTION OF INTERNAL ELECTRODE OF MULTILAYER CAPACITOR AND DETECTING METHOD THEREOF

An apparatus for detecting a stacking direction of internal electrodes of a multilayer capacitor includes a capacitor moving unit having a supply unit in which a plurality of multilayer capacitors are continuously supplied ad moving the supplied multilayer capacitors in one direction, a sensor unit including a coil, installed on the capacitor moving unit, and detecting inductance of the coil when each of the multilayer capacitors approaches the coil to determine a stacking direction of internal electrodes of the multilayer capacitor based on the detected inductance of the coil, and a separating unit installed on the capacitor moving unit and separating a multilayer capacitor selected as an unsuitable multilayer capacitor by the sensor unit.

Touch screen sensor

A touch screen sensor includes a visible light transparent substrate and an electrically conductive micropattern disposed on or in the visible light transparent substrate. The micropattern includes a first region micropattern within a touch sensing area and a second region micropattern. The first region micropattern has a first sheet resistance value in a first direction, is visible light transparent, and has at least 90% open area. The second region micropattern has a second sheet resistance value in the first direction. The first sheet resistance value is different from the second sheet resistance value.

Electric characteristic acquisition apparatus
11620758 · 2023-04-04 · ·

In an electrical characteristic acquisition apparatus, a condition under which an electrical characteristic of a target object is acquired can be inputted by an operator, and an electrical characteristic of the target object is acquired under the input condition. In a case where a condition is inputted as a condition under which an electrical characteristic of the target object is acquired, an erroneous determination is made due to the different conditions that the target object is not an electrical component which complies with the nominal value, or, in a case where a difference between a value representing an electrical characteristic of the target object and a nominal value of the target object is larger than a permissible tolerance, an erroneous determination is made that the target object is defective. Here, these erroneous determinations are prevented from being made.

PSEUDO-DIFFERENTIAL PHASE MEASUREMENT AND QUALITY FACTOR COMPENSATION

A system may include a resistive-inductive-capacitive sensor, a driver configured to drive the resistive-inductive-capacitive sensor with a plurality of driving signals, each driving signal of the plurality of driving signals having a respective driving frequency, and a measurement circuit communicatively coupled to the resistive-inductive-capacitive sensor and configured to measure a first value of a physical quantity associated with the resistive-inductive-capacitive sensor in response to a first driving signal of the plurality of driving signals, wherein the first driving signal has a first driving frequency; measure a second value of the physical quantity associated with the resistive-inductive-capacitive sensor in response to a second driving signal of the plurality of driving signals, wherein the second driving signal has a second driving frequency; measure a third value of the physical quantity associated with the resistive-inductive-capacitive sensor in response to the first driving signal; measure a fourth value of the physical quantity associated with the resistive-inductive-capacitive sensor in response to the second driving signal; determine a first difference between the third value and the first value; determine a second difference between the fourth value and the second value; and based on the first difference and the second difference, determine if a change in a resonant property of the resistive-inductive-capacitive sensor has occurred, and determine if a change in a quality factor of the resistive-inductive-capacitive sensor has occurred.

Device and method for measuring microwave surface resistance of dielectric conductor deposition interface
20230152360 · 2023-05-18 ·

A device for measuring a microwave surface resistance of a dielectric conductor deposition interface includes: a test platform, a calibration component, a sealing cavity and a support plate; wherein the test platform comprises: a shielding cavity having an open bottom, a dielectric rod, an input coupling structure, an output coupling structure, and a dielectric supporter; the dielectric conductor test sample and the test platform form a TE.sub.0m(n+δ) mode dielectric resonator; the calibration component and the dielectric conductor test sample are mounted on the test platform to measure corresponding quality factors, thereby calculating the microwave surface resistance of the deposition interface of the dielectric conductor test sample. The present invention requires no pre-measurement of relative permittivity and loss tangent of the dielectric conductor test sample. After calibration, the microwave surface resistance of the dielectric conductor deposition interface can be obtained by only one non-destructive measurement.

Transistor characterization

A method of characterizing a field-effect transistor, including: a step of application, to the transistor gate, of a single voltage ramp; and a step of interpretation both of gate capacitance variations and of drain current variations of the transistor.