A method and apparatus are for monitoring a secondary power device and for accurately checking a state of the secondary power device, and an electronic system includes the apparatus. The method of monitoring a secondary power device includes setting a first reference parameter by using a voltage of at least one capacitor of the secondary power device, setting a second reference parameter by using the voltage of the at least one capacitor and the first reference parameter, and setting a reference level for checking of the state of the secondary power device by using the second reference parameter, wherein the reference level is used in checking of the state of the secondary power device.

A method and apparatus are for monitoring a secondary power device and for accurately checking a state of the secondary power device, and an electronic system includes the apparatus. The method of monitoring a secondary power device includes setting a first reference parameter by using a voltage of at least one capacitor of the secondary power device, setting a second reference parameter by using the voltage of the at least one capacitor and the first reference parameter, and setting a reference level for checking of the state of the secondary power device by using the second reference parameter, wherein the reference level is used in checking of the state of the secondary power device.

A waveguide interface is disclosed. The disclosed waveguide interface comprises: an inner boundary region extending peripherally around a cavity, a recessed region extending peripherally around the inner boundary region, and a plurality of protrusions extending from the recessed region.

Methods and systems for multi-level RF pulse monitoring and RF pulsing parameter optimization at a manufacturing system are provided. A radio frequency (RF) signal is pulsed within a processing chamber in accordance with a set of RF pulsing parameters. Sensor data is received from one or more sensors that indicates a multi-level RF pulse waveform detected within the processing chamber based on the RF signal pulsing. One or more peaks are identified in the detected multi-level RF pulse waveform. Each identified peak corresponds to at least one RF signal pulse of the RF signal pulsing within the processing chamber. A determination is made, based on the identified one or more peaks, whether the detected multi-level RF pulse waveform corresponds to the target multi-level RF pulse waveform. An indication of whether the detected multi-level RF pulse waveform corresponds to the target multi-level RF pulse waveform is provided to a client device.

Methods and systems for multi-level RF pulse monitoring and RF pulsing parameter optimization at a manufacturing system are provided. A radio frequency (RF) signal is pulsed within a processing chamber in accordance with a set of RF pulsing parameters. Sensor data is received from one or more sensors that indicates a multi-level RF pulse waveform detected within the processing chamber based on the RF signal pulsing. One or more peaks are identified in the detected multi-level RF pulse waveform. Each identified peak corresponds to at least one RF signal pulse of the RF signal pulsing within the processing chamber. A determination is made, based on the identified one or more peaks, whether the detected multi-level RF pulse waveform corresponds to the target multi-level RF pulse waveform. An indication of whether the detected multi-level RF pulse waveform corresponds to the target multi-level RF pulse waveform is provided to a client device.

Systems and methods of testing cables are provided. An exemplary testing system for testing radio frequency (RF) cables in a telecommunication system including a cable under test includes a termination element configured to be coupled to a distal end of the cable under test; and a controller in communication with the termination element, wherein the controller switches the termination element between two or more termination states selected from the group consisting of an open termination state, a short termination state, a load termination state, and a through state.

A test and measurement device includes one or more ports configured to connect to a device under test (DUT), a time domain reflectometry (TDR) source configured receive a source control signal and to produce an incident signal to be applied to the DUT, one or more analog-to-digital converters (ADC) configured to receive a sample clock and sample the incident signal from the TDR source and a time domain reflection (TDR) signal or a time domain transmission (TDT) signal from the DUT to produce an incident waveform and a TDR/TDT waveform, one or more processors configured to execute code to cause the one or more processors to: control a clock synthesizer to produce the sample clock and the source control signal, and use a period of the TDR source, a period of the sample clock, and the number of samples to determine time locations for samples in the incident waveform and the TDR/TDT waveform, and a display configured to display the incident waveform and the TDR/TDT waveform. A method of sampling a waveform using a real-equivalent-time oscilloscope having a time domain reflectometry source, comprising: controlling a clock synthesizer to produce a sample clock and a source control signal; using a time domain reflectometry (TDR) source to receive the source control signal and to produce an incident signal to be applied to a device under test (DUT); receiving the sample clock at one or more analog-to-digital converters (ADC) and sampling the incident signal from the TDR source and a TDR/TDT signal from the DUT to produce an incident waveform and a TDR/TDT waveform; determining time locations for samples in the incident waveform and the TDR/TDT waveform, using a period of the TDR source, a period of the sample clock, and a number of samples; and displaying the incident waveform and the TDR/TDT waveform.

A vector network analyzer configured to analyze a high-frequency signal received is described. The vector network analyzer includes three or more reflectometers, each reflectometer operating at a respective frequency range and having a first terminal and a second terminal. The reflectometers are connected with each other in series such that a combined frequency range of the vector network analyzer is established. A first reflectometer is connected to one of a load or a signal source via its first terminal. A last reflectometer is connected to a test port via its second terminal. At least two reflectometers are interconnected with each other by an interposed frequency selective absorptive filter.

A high-frequency component test device including a test key and a test module is provided. The test key includes a front-level key and a back-level key which are arranged symmetrically and have the same electrical length and characteristic impedance. The test module is used to measure an S parameter of the front-level key and the back-level key connected directly and an S parameter of a structure where a device under test (DUT) is added between the front-level key and the back-level key. The test module performs S parameter calculation in the frequency domain and converts the S parameter into an ABCD parameter matrix, and then obtains an ABCD parameter of a de-embedded DUT using a matrix root-opening operation and an inverse matrix operation.

A high-frequency component test device including a test key and a test module is provided. The test key includes a front-level key and a back-level key which are arranged symmetrically and have the same electrical length and characteristic impedance. The test module is used to measure an S parameter of the front-level key and the back-level key connected directly and an S parameter of a structure where a device under test (DUT) is added between the front-level key and the back-level key. The test module performs S parameter calculation in the frequency domain and converts the S parameter into an ABCD parameter matrix, and then obtains an ABCD parameter of a de-embedded DUT using a matrix root-opening operation and an inverse matrix operation.