The method may be used for measuring an electric property of a magnetic tunnel junction used in an embedded MRAM memory for example. The method uses a multi point probe with a plurality of probe tips for contacting a designated area of the test sample, which is electrically insulated from the part of the test sample which is to be tested. Electrically connections are placed underneath the magnetic tunnel junction and goes to the designated area.

Methods for assessing the quality of a semiconductor structure having a charge trapping layer to, for example, determine if the structure is suitable for use as a radiofrequency device are disclosed. Embodiments of the assessing method may involve measuring an electrostatic parameter at an initial state and at an excited state in which charge carriers are generated.

An inspection system includes: an inspection section provided with an inspection part having a plurality of inspection units each including a tester that performs an electrical inspection of an inspection target, and a probe card provided between the tester and the inspection target; and a loader section including an arrangement part in which a storage container for the inspection target is disposed, and a loader that delivers the inspection target between the storage container and the inspection section. The inspection part includes a plurality of inspection unit rows that are formed by arranging the plurality of inspection units in one horizontal direction and arranged in a plurality of tiers in a vertical direction. The arrangement part is provided on an end part side in one direction of the inspection part.

A method of estimating a nitrogen site carbon concentration, in a first epitaxial layer made of carbon-doped gallium nitride of an electronic component, including steps of: estimating an electric capacitance of a stack interposed between the first layer and a first electrode of the component; heating the component; measuring an offset of a threshold voltage of the component; and deducing therefrom a nitrogen site carbon surface concentration in the first layer.

A measurement apparatus for measuring dimensions within a semiconductor device includes an illumination source configured to direct light onto a stage configured to hold the semiconductor device, and a detection assembly configured to receive light diffracted by the semiconductor device, in which the detection assembly includes a detector configured to receive light diffracted by the semiconductor device and determine a measurement of a periodic structure within the semiconductor device based on the received diffracted light, and a diffraction pattern filter configured to permit light diffracted by the periodic structure to be measured to reach the detector and block at least a portion of light diffracted by other structures in the semiconductor device from reaching the detector. Embodiments include methods of measuring a semiconductor device using the measurement apparatus and methods of making the diffraction pattern filter.

The disclosed technology generally relates to characterization of semiconductor structures, and more particularly to optical characterization of high-k dielectric materials. A method includes providing a semiconductor structure comprising a semiconductor and a high-k dielectric layer formed over the semiconductor, wherein the dielectric layer has electron traps formed therein. The method additionally includes at least partially transmitting an incident light having an incident energy through the high-k dielectric layer and at least partially absorbing the incident light in the semiconductor. The method additionally includes measuring a nonlinear optical spectrum resulting from the light having the energy different from the incident energy, the nonlinear optical spectrum having a first region and a second region, wherein the first region changes at a different rate in intensity compared to the second region. The method further includes determining from the nonlinear optical spectrum one or both of a first time constant from the first region and a second time constant from the second region, and determining a trap density in the high-k dielectric layer based on the one or both of the first time constant and the second time constant.

The present disclosure relates to a steady-state microwave conductivity method that includes modulating a light beam to form an amplitude modulated light having a modulation frequency ω.sub.1, producing a microwave waveform, exposing a sample to the amplitude modulated light and a first portion of the microwave waveform to produce an amplitude modulation signal on the first portion of the microwave waveform, and mixing a second portion of the microwave waveform and the amplitude modulation signal to produce a first signal and a second signal.

A method for non-contact measurement of stress in a thin-film deposited on a substrate is disclosed. The method may include measuring first topography data of a substrate having a thin-film deposited thereupon. The method may also include comparing the first topography data with second topography data of the substrate that is measured prior to thin-film deposition. The method may further include obtaining a vertical displacement of the substrate based on the comparison between the first topography data and the second topography data. The method may also include detecting a stress value in the thin-film deposited on the substrate based on a fourth-order polynomial equation and the vertical displacement.

An electric connection inspection device includes: a cooling plate; an insulating plate provided on the cooling plate; a first measurement electrode provided on the insulating plate; and a second measurement electrode and a third measurement electrode provided above the first measurement electrode and located apart from the first measurement electrode. The insulating plate includes a variable thermal resistance mechanism. A semiconductor device can be installed between the first measurement electrode and the second measurement electrode and between the first measurement electrode and the third measurement electrode.

[Object] To provide a semiconductor device capable of improving a discharge starting voltage when measuring electric characteristics, and widening a pad area of a surface electrode or increasing the number of semiconductor devices (number of chips) to be obtained from one wafer, and a method for manufacturing the same. [Solution Means] A semiconductor device 1 includes an n-type SiC layer 2 having a first surface 2A, a second surface 2B, and end faces 2C, a p-type voltage relaxing layer 7 formed in the SiC layer 2 so as to be exposed to the end portion of the first surface 2A of the SiC layer 2, an insulating layer 8 formed on the SiC layer 2 so as to cover the voltage relaxing layer 7, and an anode electrode 9 that is connected to the first surface 2A of the SiC layer 2 through the insulating layer 8 and has a pad area 95 selectively exposed.