An inspection system includes: an inspection section provided with an inspection part having a plurality of inspection units each including a tester that performs an electrical inspection of an inspection target, and a probe card provided between the tester and the inspection target; and a loader section including an arrangement part in which a storage container for the inspection target is disposed, and a loader that delivers the inspection target between the storage container and the inspection section. The inspection part includes a plurality of inspection unit rows that are formed by arranging the plurality of inspection units in one horizontal direction and arranged in a plurality of tiers in a vertical direction. The arrangement part is provided on an end part side in one direction of the inspection part.

A method for non-contact measurement of stress in a thin-film deposited on a substrate is disclosed. The method may include measuring first topography data of a substrate having a thin-film deposited thereupon. The method may also include comparing the first topography data with second topography data of the substrate that is measured prior to thin-film deposition. The method may further include obtaining a vertical displacement of the substrate based on the comparison between the first topography data and the second topography data. The method may also include detecting a stress value in the thin-film deposited on the substrate based on a fourth-order polynomial equation and the vertical displacement.

A direction detecting device according to an exemplary embodiment of the present invention includes; a structure having at least two through-holes passing through an upper surface and a lower surface thereof; and at least two electrode units inserted into the at least two through-holes and each including a dielectric layer, a first electrode layer disposed on an upper surface of the dielectric layer and exposed at the upper surface of the structure, and a second electrode layer disposed on a lower surface of the dielectric layer and exposed at the lower surface of the structure.

Methods for assessing the quality of a semiconductor structure having a charge trapping layer to, for example, determine if the structure is suitable for use as a radiofrequency device are disclosed. Embodiments of the assessing method may involve measuring an electrostatic parameter at an initial state and at an excited state in which charge carriers are generated.

A system for characterizing a semiconductor sample is disclosed. The system comprises a measurement subsystem, a data analysis subsystem, and a statistical analysis subsystem coupled to each other via an interconnection. The measurement subsystem excites a semiconductor sample by shining light on one or more points in the semiconductor sample to generate electron hole pairs, which creates a change in conductivity of the semiconductor sample. The measurement subsystem measures one or more voltage decay curves corresponding to the one or more points in the semiconductor sample based on the changes in conductivity, and transmits the measured voltage decay curves to the data analysis subsystem. The data analysis subsystem extracts one or more normalized decay curves from the transmitted measured voltage decay curves, which the data analysis subsystem then transmits to the statistical analysis subsystem. The statistical analysis subsystem analyzes the transmitted normalized decay curves.

A semiconductor device, its manufacturing method, and a radiation measurement method are presented, relating to semiconductor techniques. The semiconductor device includes: a substrate comprising a base area and a collector area adjacent to each other; a plurality of semiconductor fins on the substrate, wherein the plurality of semiconductor fins comprises at least a first semiconductor fin and a second semiconductor fin on the base area and separated from each other, the first semiconductor fin comprises an emission area adjacent to the base area, and the second semiconductor fin comprises a first region adjacent to the base area; a first gate structure on the second semiconductor fin; and a first source and a first drain at two opposite sides of the first gate structure and at least partially in the first region. Radiation in a semiconductor apparatus can be measured through this semiconductor device.

An electrostatic encoder (40) detects the rotation angle of a rotor (42) with great accuracy based on the change in the capacitance between electrodes arranged on a stator (41) and the rotor (42). Detection electrodes (44a to 44d) and transmission electrodes (45a to 45d) are arranged circumferentially and alternately on the stator (41). Detection signals (phase A, phase B) amplitude-modulated based on the rotation of the rotor (42) and having a mutual phase difference of 90 degrees are output from adjacent ones of the detection electrodes. Modulated signals (V1, V2) are generated by demodulating the detection signals having a mutual phase difference of 90 degrees. Applying resolver-digital (RD) conversion processing to the modulated signals allows obtaining the rotation angle of the rotor.

A method for non-contact measurement of stress in a thin-film deposited on a substrate is disclosed. The method may include measuring first topography data of a substrate having a thin-film deposited thereupon. The method may also include comparing the first topography data with second topography data of the substrate that is measured prior to thin-film deposition. The method may further include obtaining a vertical displacement of the substrate based on the comparison between the first topography data and the second topography data. The method may also include detecting a stress value in the thin-film deposited on the substrate based on a fourth-order polynomial equation and the vertical displacement.

A method for determining a two-dimensional spectrum of a specified carrier having a specified mobility and density in a material of an electronic device, the method including performing a magnetic field-dependent Hall measurement on the material of the electronic device; determining, using the magnetic field-dependent Hall measurement, a probability density function of a conductance of the material of the electronic device, wherein the probability density function describes a spectrum of a plurality of m-carriers, wherein the plurality of m-carriers includes the specified carrier having the specified mobility and density; and determining an electrical transport of a plurality of electrons and holes inside the material of the electronic device by observing a variation of the probability density function with any of the specified mobility and density of the specified carrier.

A device is provided for electrically measuring surface characteristics of a sample. The device comprises at least one group of three electrodes: a first and second electrode spaced apart from each other and configured to be placed onto the surface of the sample, and a third electrode between the first two but isolated from these two electrodes by a one or more first insulators, wherein a second insulator further isolates the central electrode from the sample when the device is placed thereon. The three electrodes and the insulators are attached to a single or to multiple holders with conductors incorporated therein for allowing the coupling of the electrodes to power sources or measurement tools. The placement of the device onto a semiconductor sample creates a transistor with the sample surface acting as the channel. The device thereby allows the determination of the transistor characteristics of the sample in a straightforward way.