A method that is disclosed that includes the operations outlined below. Dies are arranged on a test fixture, and each of the dies includes first antennas and at least one via array, wherein the at least one via array is formed between at least two of the first antennas to separate the first antennas. By the first antennas of the dies, test processes are sequentially performed on an under-test device including second antennas that positionally correspond to the first antennas, according to signal transmissions between the first antennas and the second antennas.

Systems, devices, and methods for performing a non-contact electrical measurement (NCEM) on a NCEM-enabled cell included in a NCEM-enabled cell vehicle may be configured to perform NCEMs while the NCEM-enabled cell vehicle is moving. The movement may be due to vibrations in the system and/or movement of a movable stage on which the NCEM-enabled cell vehicle is positioned. Position information for an electron beam column producing the electron beam performing the NCEMs and/or for the moving stage may be used to align the electron beam with targets on the NCEM-enabled cell vehicle while it is moving.

The present disclosure relates to a steady-state microwave conductivity method that includes modulating a light beam to form an amplitude modulated light having a modulation frequency ω.sub.1, producing a microwave waveform, exposing a sample to the amplitude modulated light and a first portion of the microwave waveform to produce an amplitude modulation signal on the first portion of the microwave waveform, and mixing a second portion of the microwave waveform and the amplitude modulation signal to produce a first signal and a second signal.

A method for detecting defects in a GaN high electron mobility transistor is disclosed. The method includes steps of measuring a plurality of electrical characteristics of a GaN high electron mobility transistor, measuring the plurality of electrical characteristics after performing a deterioration test on the GaN high electron mobility transistor, irradiating the GaN high electron mobility transistor in turns with a plurality of light sources with different wavelengths and measuring the plurality of electrical characteristics after each irradiation of the GaN high electron mobility transistor by each of the plurality of light sources, and comparing changes of the plurality of electrical characteristics measured in the above steps to determine the defect location of the GaN high electron mobility transistor.

The present disclosure describes a probe design to measure cycles of microdevices. In particular, the probe comprises, electrodes, dielectric, stimulating capacitor, voltage stimulating source for time varying stimulating voltage signal and a series switch to control biasing condition. The probe structure further has a probe tip and resting pads (ring shape or otherwise) along with a leveling mechanism and apparatus. The disclosure also describes a method to measure cycles of microdevices using the probe structure.

The present disclosure describes a probe design to measure cycles of microdevices. In particular, the probe comprises, electrodes, dielectric, stimulating capacitor, voltage stimulating source for time varying stimulating voltage signal and a series switch to control biasing condition. The probe structure further has a probe tip and resting pads (ring shape or otherwise) along with a leveling mechanism and apparatus. The disclosure also describes a method to measure cycles of microdevices using the probe structure.

A calibration method includes transmitting first data comprising a calibration data and a first checksum to the storage device according to each of a plurality of training parameter sets; recording a plurality of error indicators respectively which are corresponding to the plurality of training parameter sets and from the storage device; and identifying one of the plurality of training parameter sets as a predetermined parameter set according to the plurality of error indicators respectively corresponding to the plurality of training parameter sets; wherein each error indicator indicates whether transmitting the first data according to the corresponded training parameter set is successful.

A calibration method includes transmitting first data comprising a calibration data and a first checksum to the storage device according to each of a plurality of training parameter sets; recording a plurality of error indicators respectively which are corresponding to the plurality of training parameter sets and from the storage device; and identifying one of the plurality of training parameter sets as a predetermined parameter set according to the plurality of error indicators respectively corresponding to the plurality of training parameter sets; wherein each error indicator indicates whether transmitting the first data according to the corresponded training parameter set is successful.

A method for estimating at least one electrical property of a semiconductor device is provided. The method includes forming the semiconductor device and at least one testing unit on a substrate, irradiating the testing unit with at least one electron beam, estimating electrons from the testing unit induced by the electron beam, and estimating the electrical property of the semiconductor device according to intensity of the estimated electrons from the testing unit.

An optical testing circuit on a wafer includes an optical input configured to receive an optical test signal and photodetectors configured to generate corresponding electrical signals in response to optical processing of the optical test signal through the optical testing circuit. The electrical signals are simultaneously sensed by a probe circuit and then processed. In one process, test data from the electrical signals is simultaneously generated at each step of a sweep in wavelength of the optical test signal and output in response to a step change. In another process, the electrical signals are sequentially selected and the sweep in wavelength of the optical test signal is performed for each selected electrical signal to generate the test data.