An optical testing circuit on a wafer includes an optical input configured to receive an optical test signal and photodetectors configured to generate corresponding electrical signals in response to optical processing of the optical test signal through the optical testing circuit. The electrical signals are simultaneously sensed by a probe circuit and then processed. In one process, test data from the electrical signals is simultaneously generated at each step of a sweep in wavelength of the optical test signal and output in response to a step change. In another process, the electrical signals are sequentially selected and the sweep in wavelength of the optical test signal is performed for each selected electrical signal to generate the test data.

An inspection system includes a light source, a mirror, Galvano mirrors, a casing that holds the mirror and the Galvano mirrors inside and includes an attachment portion for attaching an optical element, and a control unit that controls a deflection angle of the Galvano mirrors, wherein the control unit controls the deflection angle so that an optical path optically connected to a semiconductor device is switched between a first optical path passing through the Galvano mirrors and the mirror, and a second optical path passing through the Galvano mirrors and the attachment portion, and controls the deflection angle so that the deflection angle when switching to the first optical path has been performed and the deflection angle when switching to the second optical path has been performed do not overlap.

A fault detector for an anti-parallel thyristor includes: a power supply unit configured to supply power to the first and second thyristors; a first current sensor configured to output a first current measurement value that flows through the first thyristor; a second current sensor configured to output a second current measurement value that flows through the second thyristor; and a detector which notifies a fault of a thyristor when the first and second current measurement values satisfy a set fault condition,

An inspection method includes a step S20 of electrically connecting electrical signal terminals of a semiconductor device to electric connectors, and optically connecting optical signal terminals of the semiconductor device to optical connectors, a step S30 of measuring a test light output signal output from a monitoring element provided in an inspection object in response to a test input signal having been input to the monitoring element while adjusting conditions of a position and an inclination of the inspection object, and extracting conditions in which an optical intensity of the test light output signal is a predetermined determination value or greater as inspection conditions, and a step S40 of inspecting the semiconductor device under the inspection conditions.

An observation apparatus includes a laser light source, a scanning optical system irradiating a semiconductor device with laser light output from the laser light source, a bias power supply applying a reverse bias voltage of a predetermined voltage between electrodes of the semiconductor device, a sensor detecting an electrical property occurring in the semiconductor device in response to the laser light, and a control system generating an electrical property image of the semiconductor device based on a detection signal from the sensor. The bias power supply gradually increases a magnitude of the predetermined voltage until the predetermined voltage reaches a voltage at which avalanche amplification occurs in the semiconductor device. When the predetermined voltage is increased, the scanning optical system irradiates with the laser light, the sensor detects the electrical property, and the control system generates the electrical property image.

An inspection system includes a light source, a mirror, Galvano mirrors, a casing that holds the mirror and the Galvano mirrors inside and includes an attachment portion for attaching an optical element, and a control unit that controls a deflection angle of the Galvano mirrors, wherein the control unit controls the deflection angle so that an optical path optically connected to a semiconductor device is switched between a first optical path passing through the Galvano mirrors and the mirror, and a second optical path passing through the Galvano mirrors and the attachment portion, and controls the deflection angle so that the deflection angle when switching to the first optical path has been performed and the deflection angle when switching to the second optical path has been performed do not overlap.

Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.

An inspection apparatus includes a light sensor that detects light from a semiconductor device to which an electric signal has been input, an optical system that guides light from the semiconductor device to the light sensor, and a control device electrically connected to the light sensor. The control device includes a measurement unit that acquires waveform data obtained by optical measurement for each of a plurality of positions on a defective semiconductor device and waveform data obtained by the optical measurement for each of a plurality of positions on a non-defective semiconductor device, a calculation unit that calculates a degree of correspondence between the waveform data of the defective semiconductor device and the waveform data of the non-defective semiconductor device, and an analysis unit that analyzes a defective part of the defective semiconductor device on the basis of the degree of correspondence for each of the plurality of positions.

According to various examples, a method for non-destructive detection of defects in a semiconductor die is described. The method may include positioning an emitter above the semiconductor die. The method may include generating an emitted wave using the emitter that is directed to a focal point on a surface of the die. The method may include generating a reflected wave from the focal point. The focal point may act as a point source reflecting the emitted wave. The method may include positioning a receiver above the die to receive the reflected wave. The method may also include measuring the reflected wave to detect modulations in amplitude in the reflected wave.

Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.