The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.

A measurement system for determining a noise figure of a device under test is described. The measurement system determines a first total error power based on the output signal by a first noise canceling technique, wherein the first total error power includes systematic errors originating in the device under test and in the measurement system. The measurement system determines a second total error power based on the output signal by a different, second noise canceling technique. The second total error power includes systematic errors originating in the measurement system. The second total error power further includes noise originating in the device under test and in the measurement system outside of the measurement instrument. The measurement system is configured to subtract the first total error power from the second total error power, thereby obtaining an external noise power.

A test arrangement for testing a power electronics controller. An intermediate network current in the electrical intermediate network is reduced in that the intermediate network current flowing in the intermediate network is determined by the controller and the controller changes at least one control value of at least one of the load-side power electronics modules in such a way that the intermediate network current is reduced when the interface of the load-side power electronics module is applied with the modified control value.

A method of operating an electrical test prediction apparatus includes determining a relationship between first electrical test (ET) data, corresponding to at least one shot region comprising a subset of a plurality of semiconductor chips of a wafer, and electrical die sorting (EDS) data, obtained by measuring a state of each chip on the wafer by a testing device, and predicting second ET data, corresponding to an region of the wafer other than the at least one shot region by performing machine learning on the relationship.

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes;

Example circuitry is usable in testing a device under test (DUT). The circuitry includes test inputs; a resistor ladder including resistors electrically connected in series, with the resistor ladder being electrically connected to each of the test inputs; and first operational amplifiers, with each first operational amplifier including a first input and a first output, with each first input being electrically connected to the resistor ladder, and with each first output to electrically connect to the DUT. The circuitry includes floating circuitry which includes a second operational amplifier. The second operational amplifier includes a second input electrically connected to the resistor ladder and a reference input; a first power input to receive a first voltage; and a second power input to receive a second voltage. The floating circuitry is configured to apply the first voltage and the second voltage to power inputs of each of the first operational amplifiers.

A method of testing a bonded wire on a wire bonding machine is provided. The method includes the steps of: (a) bonding a portion of a wire to a bonding location using a wire bonding tool on a wire bonding machine to form a bonded portion of the wire; (b) moving the wire bonding tool away from the bonded portion of the wire after step (a) with the wire engaged with the wire bonding tool; and (c) moving the wire bonding tool along a motion profile after step (b), with the wire engaged with the wire bonding tool to test the wire.