Power control arrangements for integrated circuit devices are discussed herein. In one example, an assembly includes an integrated circuit device comprising one or more processing cores and a power domain configured to distribute a supply voltage to the one or more processing cores. The assembly also includes a charge injection circuit coupled to the power domain of the integrated circuit device, and configured to selectively couple electric charge into the power domain to predictively offset at least portions of voltage transients in the power domain.

A scan chain may be formed throughout an integrated circuit in which the scan chain is coupled to a set of pins via bi-directional input/output (I/O) buffers. A test pattern may be received from an external tester using the set of I/O pins and buffers operating in parallel. The test pattern is scanned into the scan chain using a shift clock operating at a first rate. The test pattern is then provided to combinatorial logic circuitry coupled to the scan chain. A response pattern is captured in the scan chain and then scanned from the scan chain using a shift clock operating at a second rate that is slower than the first rate. The response pattern is provided to the external tester using the same set of I/O pins and buffers operating in parallel.

Adjustable integrated circuits and methods for designing the same are provided. In one embodiment, a method of designing an integrated circuit includes determining a plurality of design criteria of the integrated circuit; designing a plurality of circuit blocks of the integrated circuit in accordance with the plurality of design criteria, where one or more circuit blocks in the plurality of circuit blocks include one or more feedback paths; designing a circuit performance monitor, where the circuit performance monitor includes one or more replica feedback paths corresponding to the one or more feedback paths in the one or more circuit blocks, and where the circuit performance monitor is configured to monitor feedback path information of the one or more replica feedback paths; verifying the plurality of circuit blocks and the circuit performance monitor to meet the plurality of design criteria; and producing a verified description of the integrated circuit for manufacturing.

A semiconductor die is aligned to a test probe by placing the semiconductor die onto a flat upper surface of a test stage with solder balls of the die facing upward, fluidizing motion of the die with reference to the test stage by pulsing gas between the die and the upper surface of the test stage, and coarse aligning the die with reference to the test stage by moving the die until adjacent edges of the die contact corner guides that are disposed on the test stage. Further, the method includes raising the test stage toward the test probe until an alignment feature of the test probe engages a first solder ball of the die, and fine aligning the die with reference to the test probe by continuing to raise the test stage until a second solder ball of the die fits into a test cup of the test probe

According to one embodiment, a semiconductor integrated circuit includes a signal supply controller to supply a signal, which allows a level of a resistance value of one of the first and second switching elements to be a predetermined level, to the elements via shared signal wire, and to set a current flowing through the higher-potential side terminal in the one of the first and second switching elements to a value which causes the level of the resistance value to be the predetermined level. In a state where the level of the resistance value of the one of the first and second switching elements is set to the predetermined level, another of the first and second switching elements is brought into a conducting state.

An apparatus is described for burn-in and/or functional testing of microelectronic circuits of unsingulated wafers. A large number of power, ground, and signal connections can be made to a large number of contacts on a wafer. The apparatus has a cartridge that allows for fanning-in of electric paths. A distribution board has a plurality of interfaces that are strategically positioned to provide a dense configuration. The interfaces are connected through flexible attachments to an array of first connector modules. Each one of the first connector modules can be independently connected to a respective one of a plurality of second connector modules, thereby reducing stresses on a frame of the apparatus. Further features include for example a piston that allows for tight control of forces exerted by terminals onto contacts of a wafer.

In a general aspect, a quantum error-correction technique includes applying a first set of two-qubit gates to qubits in a lattice cell, and applying a second, different set of two-qubit gates to the qubits in the lattice cell. The qubits in the lattice cell include data qubits and ancilla qubits, and the ancilla qubits reside between respective nearest-neighbor pairs of the data qubits. After the first and second sets of two-qubit gates have been applied, measurement outcomes of the ancilla qubits are obtained, and the parity of the measurement outcomes is determined.

A spectrum analyzer for measuring an electrical response of a device under test (DUT) includes a test port for receiving radio frequency (RF) signals from the DUT in response to a test signal transmitted to the DUT, a local oscillator (LO) for generating a LO signal, a sampler connected with the LO to receive the LO signal and a receiver connected with the sampler. The sampler includes a non-linear transmission line that generates a sampler signal having a frequency that is a multiple of a frequency of the LO signal, and an input for receiving a RF signal from the test port. When a RF signal from an RF input source is received the sampler outputs an intermediate frequency (IF) signal. The receiver receives the IF signal output of the sampler.

In one implementation, a method for operating an apparatus is described. The method includes applying a bias voltage to place a transistor of a reference sensor in a known state. The reference sensor is in an array of sensors that further includes a chemical sensor coupled to a reaction region for receiving at least one reactant. The method further includes acquiring an output signal from the reference sensor in response to the applied bias voltage. The method further includes determining a defect associated with the array if the output signal does not correspond to the known state.

Monolithic three-dimensional integration can achieve higher device density compared to 3D integration using through-silicon vias. A test solution for M3D integrated circuits (ICs) is based on dedicated test layers inserted between functional layers. A structure includes a first functional layer having first functional components of the IC with first test scan chains and a second functional layer having second functional components of the IC with second test scan chains. A dedicated test layer is located between the first functional layer and the second functional layer. The test layer includes an interface register controlling signals from a testing module to one of the first test scan chains and the second test scan chains, and an instruction register connected to the interface register. The instruction register processes testing instructions from the testing module. Inter-layer vias connect the first functional components, the second functional components, and the testing module through the test layer.