An input/output (I/O) sensor for a multi-IC module. The I/O sensor includes: delay circuitry, configured to receive a data signal from an interconnected part of an IC of the multi-IC module and to generate a delayed data signal, the delay circuitry including an adjustable delay-line configured to delay an input signal by a set time duration; a comparison circuit, configured to generate a comparison signal by comparing the data signal with the delayed data signal; and processing logic, configured to set the time duration of the adjustable delay-line and, based on the comparison signal, identify a margin measurement of the data signal for determining an interconnect quality parameter.

An input/output (I/O) sensor for a multi-IC module. The I/O sensor includes: delay circuitry, configured to receive a data signal from an interconnected part of an IC of the multi-IC module and to generate a delayed data signal, the delay circuitry including an adjustable delay-line configured to delay an input signal by a set time duration; a comparison circuit, configured to generate a comparison signal by comparing the data signal with the delayed data signal; and processing logic, configured to set the time duration of the adjustable delay-line and, based on the comparison signal, identify a margin measurement of the data signal for determining an interconnect quality parameter.

The present application discloses a method for characterizing a resistance state of a programmable element of an integrated circuit. The method includes the steps of setting a first programming voltage of a first polarity to program the programmable element of the integrated circuit, setting a first read voltage of the first polarity to the integrated circuit at a first temperature to obtain a first read current, and a first resistance is derived from the first read current, setting the first read voltage of the first polarity to the integrated circuit at a second temperature to obtain a second read current, the second temperature is at least 50° C. higher than the first temperature, and a second resistance is derived from the second read current, and comparing the first resistance and the second resistance to characterize the resistance state of the programmable element.

Described herein are improved techniques for measuring propagation delay of an integrated circuit that facilitate performing propagation delay measurements on-chip. Some embodiments relate to an integrated circuit comprising programmable oscillator circuitry with a plurality of oscillator stages that are switchable into and out of a delay path based on control signals from a controller, allowing the same programmable oscillator to generate many different oscillator signals according to the received control signals, for the controller to determine a central tendency and/or variance of propagation delay of the integrated circuit. Some embodiments relate to an integrated circuit including programmable delay paths configured to provide an amount of cell delay and an amount of wire delay based on control signals from a controller, allowing the same programmable delay path to generate signals for measuring delays due to cell and wire delays of the integrated circuit.

A test and measurement instrument including a voltage source configured to output a source voltage, a current sensor, and one or more processors. The one or more processors are configured to determine an estimation of a load of an unknown connected device under test based on the source voltage, the current sensor, and a voltage of the connected device under test without any prior knowledge of the connected device under test.

An image-capturing unit includes: an image-capturing chip; a power supply circuit unit that outputs electrical power to be fed to the image-capturing chip; a power supply line that feeds electrical power from the power supply circuit unit to the image-capturing chip; a disconnecting unit that is provided to the power supply line and is electrically disconnecting the power supply circuit unit and the image-capturing chip when a leakage current of the image-capturing chip is measured; and an implementation substrate on which the power supply circuit unit, the image-capturing chip, the power supply line and the disconnecting unit are implemented.

An example method provides a power MOSFET, a voltage source coupled to the power MOSFET, and a current measurement device coupled to a first non-control terminal of the power MOSFET. The voltage source, the current measurement device, and a second non-control terminal of the power MOSFET couple to ground. The method uses the voltage source to apply a voltage between a gate terminal and the second non-control terminal of the power MOSFET, the voltage greater than zero volts and less than a threshold voltage of the power MOSFET. The method also uses the current measurement device to measure a first current flowing through the first non-control terminal while applying the voltage. The method further uses the first current to predict a second current through the first non-control terminal for a voltage between the gate terminal and the second non-control terminal that is approximately zero.

An input/output (I/O) sensor for a multi-IC module. The I/O sensor includes: delay circuitry, configured to receive a data signal from an interconnected part of an IC of the multi-IC module and to generate a delayed data signal, the delay circuitry including an adjustable delay-line configured to delay an input signal by a set time duration; a comparison circuit, configured to generate a comparison signal by comparing the data signal with the delayed data signal; and processing logic, configured to set the time duration of the adjustable delay-line and, based on the comparison signal, identify a margin measurement of the data signal for determining an interconnect quality parameter.

An input/output (I/O) sensor for a multi-IC module. The I/O sensor includes: delay circuitry, configured to receive a data signal from an interconnected part of an IC of the multi-IC module and to generate a delayed data signal, the delay circuitry including an adjustable delay-line configured to delay an input signal by a set time duration; a comparison circuit, configured to generate a comparison signal by comparing the data signal with the delayed data signal; and processing logic, configured to set the time duration of the adjustable delay-line and, based on the comparison signal, identify a margin measurement of the data signal for determining an interconnect quality parameter.

The present disclosure provides methods for testing and evaluating electrical parameters of electronic circuits. An exemplary method includes providing a device-under-test electrically coupled to a testing apparatus; and determining an optimum value of a first electrical parameter and an optimum value of a second parameter by testing the device-under-test according to a set of first electrical parameter values and a set of second electrical parameter values. The optimum value of the first electrical parameter and the optimum value of the second parameter are determined based on an electrical noise response of the device-under-test.