The present disclosure provides, in part, methods for high spatiotemporal resolution self-sorted 4D MRI. These methods can be used to improve resolution of abdominothoracic MRI during breathing by facilitating the sorting of information corresponding to individual MRI pulse sequences according to phase within the respiratory cycle. An image of the anatomy for a particular phase within the respiratory cycle is then determined using both information corresponding to the particular phase and high-frequency MR imaging information corresponding to other respiratory phases. This method provides an increase in image resolution by sharing information at high frequencies in k-space, which may be less thoroughly sampled during any particular respiratory phase, between different respiratory phases. Methods herein also permit use of DC information from individual MRI pulse sequences to determine respiratory tissue motion and to use this tissue motion information to sort the individual MRI pulse sequences according to respiratory cycle phase.

The present disclosure relates to a magnetic field sensor circuit including at least one coil for measuring a magnetic field, a first stage amplifier circuit coupled to the coil and having a first transfer function with a pole at a first frequency, and a second stage amplifier circuit coupled to an output of the first stage amplifier circuit and having a second transfer function with a zero at the first frequency. In some embodiments, a temperature dependent frequency drift of the pole of the first transfer function corresponds to a temperature dependent frequency drift of the zero of the second transfer function.

According to one embodiment of the invention, a magnetic sensor includes a first element part. The first element part includes a first magnetic element, first and s second structures, a first magnetic member, and a second magnetic member. A direction from the first magnetic layer toward the first counter magnetic layer is along a first direction. The first structure includes a first side magnetic layer. The second structure includes a second side magnetic layer. The first magnetic element is between the first structure and the second structure in a second direction crossing the first direction. The first magnetic element is separated from the first side magnetic layer and the second side magnetic layer. A direction from the first side magnetic layer toward the first magnetic member is along the first direction. A direction from the second side magnetic layer toward the second magnetic member is along the first direction.

To provide a magnetic sensor which is reduced in power consumption without reducing magnetism detection sensitivity of a magnetoelectric transducing element. One end of a magnetoelectric transducing element is connected to an output electrode of a constant current circuit, and the other end thereof is connected to a power supply electrode on the positive side of one or plural signal processing circuits, and the like built in a magnetic sensor, whereby a connection relation of the magnetoelectric transducing element and the signal processing circuit is configured such that they are connected in series with a voltage source.

A magnetic sensor integrated circuit, a motor and an application apparatus are provided. The magnetic sensor integrated circuit includes an input port, a magnetic sensor, and a signal processing unit. The input port is electrically coupled to an external power source. The magnetic sensor senses a polarity of an external magnetic field and outputting a detection signal. The signal processing unit includes a switched capacitor filter unit to sample and filter the detection signal; the signal processing unit eliminating an offset of the detection signal.

A magnetic field sensor arrangement includes a magnetic field sensor element configured to provide a sensor output signal responsive to a magnetic field, wherein the sensor output signal is representative of a magnetic field amplitude; a processing module configured to provide a processed sensor output signal representative of the sensor output signal; a switching level calculation module configured to calculate a switching level, (1) during a power up mode, based on a default switching level, and (2) during a running mode, based on the processed sensor output signal; a comparator module configured to compare the processed sensor output signal with the switching level, and to provide a comparator output signal based on the comparison; and a storage module configured to store the default switching level, provide the default switching level during the power up mode, and update the default switching level during the running mode.

A system for suppressing low frequency noise of magnetoresistive sensors, includes a device for measuring a magnetic field, the device including at least one magnetoresistive sensor, the magnetoresistive sensor having a first sensitivity at a first operating point and a second sensitivity at a second operating point, the sensitivity at the second operating point being low or zero; a modulator configured to switch the at least one magnetoresistive sensor from the first operating point to the second operating point; and a signal processor for processing the signal derived from the device for measuring a magnetic field.

A system for suppressing low frequency noise of magnetoresistive sensors, includes a device for measuring a magnetic field, the device including at least one magnetoresistive sensor, the magnetoresistive sensor having a first sensitivity at a first operating point and a second sensitivity at a second operating point, the sensitivity at the second operating point being low or zero; a modulator configured to switch the at least one magnetoresistive sensor from the first operating point to the second operating point; and a signal processor for processing the signal derived from the device for measuring a magnetic field.

A magnetic field sensor uses upper and lower thresholds. The upper and lower thresholds are limited such that they have a minimum separation distance between equivalent voltage levels of the upper and lower thresholds.

A test apparatus tests a wafer under test on which devices under test each including magnetoresistive memory or a magnetic sensor are formed. In a test process, the wafer under test is mounted on a stage. In the test process, a magnetic field application apparatus applies a magnetic field B.sub.EX to the wafer under test. A test probe card is used in the test process. Multiple magnetization detection units are formed on a diagnostic wafer. In a diagnostic process of the test apparatus, the diagnostic wafer is mounted on the stage instead of the wafer under test. Each magnetization detection unit is capable of measuring a magnetic field B.sub.EX generated by the magnetic field application apparatus. In the diagnostic process, the diagnostic probe card is used instead of the test probe card.