A magnetic sensor device with an array of magnetic sensors arranged on a common semiconductor substrate to measure the multi-axis magnetic field of an arbitrary region with high spatial resolution, reduced sensing distance, higher measurement throughput, motion tolerance, temperature tolerance, and improved manufacturing yield. A multi-axis magnetic sensor array device fabricated on a common semiconductor substrate is optimized offering additional improvements to reduce measurement time, increase spatial resolution uniformity, and lower thermal compensation cost. Further, the central area of a surface is utilized to measure the normal magnetic field. A perimeter of Hall effect plates measuring the components of the magnetic field in the plane of the measuring surface, which allows for a very high density of normal field measurements allows calculation of the in-plane field components. Error along the edges can be mitigated with the in-plane measured components.

The present disclosure relates to a magnetic field sensor circuit including at least one coil for measuring a magnetic field, a first stage amplifier circuit coupled to the coil and having a first transfer function with a pole at a first frequency, and a second stage amplifier circuit coupled to an output of the first stage amplifier circuit and having a second transfer function with a zero at the first frequency. In some embodiments, a temperature dependent frequency drift of the pole of the first transfer function corresponds to a temperature dependent frequency drift of the zero of the second transfer function.

This sensor unit includes a base having a substantially-rectangular planar shape including a first side and a second side that are substantially orthogonal to each other, and a plurality of first sensors provided on the base and arranged on a first axis. The first axis is substantially parallel to the first side and passes through a center position of the base.

A high precision magnetic compass based on a Hall probe. The probe is oriented at an angle of 90 degrees to the rotation axis of the device. An oscillating component of the signal from the probe, synchronized with the device rotation, is transferred to the non-rotation frame and is used to align the axis of rotation to be parallel to the magnetic field. The device does not require prior calibration. It is insensitive to drift of the probe parameters and can provide an angle with precision equal to or better than a 0.05 degree.

A magnetic sensor array device is described that is constructed with multiple single sensor die, diced out of a wafer individually and packaged in a multi-chip module (MCM). The device comprises an array of multi-axis magnetic sensors that can measure the multi-dimensional magnetic field of an arbitrary sized two-dimensional region with high spatial resolution, reduced sensing distance, higher measurement throughput, tolerance to motion, improved temperature measurement, and improved yield when placed on a circuit card comprises part of an authentication system including a physical unclonable function (“PUF”), a substrate, a plurality of magnetized particles randomly dispersed in the substrate, and a PUF reader constructed using one or more of the magnetic sensor array devices wherein the PUF reader measures the magnetic field at multiple locations in close proximity to the magnetized particles. The measured magnetic field data may be compared to previously enrolled data to assess authenticity.

A sensor device comprises at least one test magnet which is designed to provide a magnetic test field, a first sensor element which is designed to capture a magnetic field and to provide a first sensor signal, wherein the first sensor signal comprises a first signal contribution on the basis of the magnetic test field, a second sensor element which is designed to capture a magnetic field and to provide a second sensor signal, wherein the second sensor signal comprises a second signal contribution on the basis of the magnetic test field, wherein the magnetic test field at the location of the first sensor element differs from the magnetic test field at the location of the second sensor element.

A magnetic sensor includes a piezomagnetic component which includes a first piezomagnetic element and a second piezomagnetic element that are arranged opposite to each other, a magnetostrictive component which includes a first magnetostrictive element and a second magnetostrictive element arranged opposite to each other on the same side of the first piezomagnetic element and the second piezomagnetic element, respectively, and a piezoelectric component which includes a first piezoelectric element deposited underneath the first piezomagnetic element, a second piezoelectric element deposited underneath the second piezomagnetic element, a third piezoelectric element deposited underneath the first magnetostrictive element, and a fourth piezoelectric element deposited underneath the second magnetostrictive element. The first piezoelectric element and the second piezoelectric element are electrically connected to a power supply circuit, and produce first deformation, which is applied to the first piezomagnetic element and the second piezomagnetic element to produce an alternating magnetic field.

Provided is a magnetic field measuring device which has good temperature stability and which enables an improvement by making it possible for the sensitivity of a Hall element, a magnetic impedance (MI) element or a magnetic resistance (MR) element, which are conventionally used extensively, to be set freely. This magnetic field measuring device comprises: a temperature maintaining means for maintaining an extremely low temperature state in which a superconductor adopts a superconducting state; a magnetic sensor which is provided inside the temperature maintaining means to detect a magnetic field; and a magnetic field space forming means for forming a magnetic field space specific to the superconducting state, by adopting a superconducting state inside the temperature maintaining means; wherein the magnetic sensor is disposed in the magnetic field space.

A method for determining a sensitivity of a Hall sensor element in consideration of an interdependency between the temperature dependence of the sensitivity and the temperature dependence of the operational quantity of the Hall sensor element includes: identifying a reference sensitivity and a reference value of the operational quantity of the Hall sensor element; determining an instantaneous value of the operational quantity of the Hall sensor element on the basis of a drive signal of the Hall sensor element; and determining the sensitivity of the Hall sensor element on the basis of the reference sensitivity, the reference value of the operational quantity, the identified instantaneous value of the operational quantity, and the interdependency.

A sensor device includes a silicon substrate having an active surface; a first sensing area disposed near a first edge of the active surface of the silicon substrate such that the first sensing area has at least one first magnetic sensing element is made of a first compound semiconductor material and contact pads; and a second sensing area disposed near a second edge of the active surface of the silicon substrate, such that the second edge is substantially opposite to the first edge, such that the second sensing area has at least one second magnetic sensing element made of a second compound semiconductor material and contact pads. A processing circuit is disposed of in the silicon substrate and is electrically connected via wire bonds and/or a redistribution layer with the contact pads of the first and second sensing areas.