A Hall sensor includes a Hall well, such as an implanted region in a surface layer of a semiconductor structure, and four doped regions spaced apart from one another in the implanted region. The implanted region and the doped regions include majority carriers of the same conductivity type. The sensor also includes a dielectric layer that extends over the implanted region, and an electrode layer over the dielectric layer to operate as a control gate to set or adjust the sensor performance. A first supply circuit provides a first bias signal to a first pair of the terminals, and a second supply circuit provides a second bias signal to the electrode layer.

An electromagnetic gradiometer that includes multiple torsionally operated MEMS-based magnetic and/or electric field sensors with control electronics configured to provide magnetic and/or electric field gradient measurements. In one example a magnetic gradiometer includes a first torsionally operated MEMS magnetic sensor having a capacitive read-out configured to provide a first measurement of a received magnetic field, a second torsionally operated MEMS magnetic sensor coupled to the first torsionally operated MEMS magnetic sensor and having the capacitive read-out configured to provide a second measurement of the received magnetic field, and control electronics coupled to the first and second torsionally operated MEMS magnetic sensors and configured to determine a magnetic field gradient of the received magnetic field based the first and second measurements from the first and second torsionally operated MEMS electromagnetic sensors.

A magnetic sensor includes first to fourth resistor sections and a plurality of MR elements. Each of the plurality of MR elements belongs to any of first to fourth groups. The first to fourth groups are defined based on the areas of top surfaces of the MR elements. The first resistor section, the second resistor section, the third resistor section, and the fourth resistor section are constituted of the first group, the second group, the third group, and the fourth group, respectively; the second group, the first group, the fourth group, and the third group, respectively; the first group, the fourth group, the third group, and the second group, respectively; or the third group, the second group, the first group, and the fourth group, respectively.

Systems and methods for eliminating or mitigating T-effects on Hall sensors. A system may comprise a magnet-coil arrangement for providing a relative movement therebetween to obtain a relative position, a Hall sensor for sensing the relative movement, a temperature sensor located in proximity of the Hall sensor for providing temperature sensing, and a controller having two or more channels coupled to Hall sensor and to the temperature sensor and configured to control the relative movement and to provide, based on the temperature sensing, a temperature correction input to the Hall sensor for compensating a temperature effect on the Hall sensor sensing.

A sensor device includes a silicon substrate having an active surface; a first sensing area disposed near a first edge of the active surface of the silicon substrate such that the first sensing area has at least one first magnetic sensing element is made of a first compound semiconductor material and contact pads; and a second sensing area disposed near a second edge of the active surface of the silicon substrate, such that the second edge is substantially opposite to the first edge, such that the second sensing area has at least one second magnetic sensing element made of a second compound semiconductor material and contact pads. A processing circuit is disposed of in the silicon substrate and is electrically connected via wire bonds and/or a redistribution layer with the contact pads of the first and second sensing areas.

A soft magnetic sensor comprising a soft material containing randomly distributed magnetic microparticles and a magnetometer that can estimate force and localize contact over a continuous area. A reference magnetometer can be used to filter motion and ambient noise. Methods for locating contact and determining force comprise data analysis of the magnetometer output. In some embodiments, the sensor can localize an object prior to contact.

A system and method that can automatically select a frequency of a magnetic field in a magnetic tracking system. A magnetic tracking system emits an alternating magnetic field using a set of three frequencies. In the present approach, a transmitter is capable of generating multiple sets of three frequencies. A processor selects a first set of frequencies to use and causes the receiver to measure the amplitude of the magnetic field at those frequencies. In one embodiment, the frequency set having the lowest energy is selected. The processor then compares an estimated jitter at those frequencies to the actual jitter experienced using the frequencies. If the actual jitter exceeds the estimated jitter by a predetermined amount, the processor switches to a different set of frequencies and causes the receiver to measure the magnetic field at the new set of frequencies. The process may repeat using the additional sets of frequencies.

A device includes a magnet and a magnetic field sensor configured to sense a magnetic field of the magnet. The magnet and the magnetic field sensor are arranged to be movable relative to each other. A relative movement between the magnet and the magnetic field sensor is based on a movement of a throttle controller of a vehicle. A power provided by a motor of the vehicle correlates to a position of the magnet relative to the magnetic field sensor as sensed by the magnetic field sensor.

The present disclosure relates to semiconductor structures and, more particularly, to temperature sensors with programmable magnetic tunnel junction structures and methods of manufacture. A structure includes a resistor material connected in series with a programmable magnetic tunnel junction structure in a Wheatstone bridge configuration.

Disclosed is a MTJ sensing circuit for measuring an external magnetic field and including a plurality of MTJ sensor elements connected in a bridge configuration, the MTJ sensing circuit having an input for inputting a bias voltage and generating an output voltage proportional to the external magnetic field multiplied by the bias voltage and a gain sensitivity of the MTJ sensing circuit, wherein the gain sensitivity and the output voltage vary with temperature; the MTJ sensing circuit further including a temperature compensation circuit configured to provide a modulated bias voltage that varies as a function of temperature over a temperature range, such that the output voltage is substantially constant as a function of temperature. Also disclosed is a method for compensating the output voltage for temperature.