Systems and methods include determining energy usage of a residence from a current that flows through a first main conductor and a second main conductor that transport the current into the residence. Embodiments of the present disclosure relate to sensors (130a-b) that monitor magnetic fields (150a-b) generated by the first and second main conductors (120a-b). After a resistive load (210a-b) is added for an electrical path in the residence, the first and second magnetic fields (150a-b) may be converted to generate first and second calibrating currents. A first prototype current is corrected to eliminate the influence of the second magnetic field (150b) onto the first magnetic field (150a) and a second prototype current is corrected to eliminate the influence of the first magnetic field (150a) onto the second magnetic field (150b). The energy usage of the residence is determined from the corrected currents.

The present device relates to a sensor capable of detecting changes in the electromagnetic field it generates when in proximity to either conductive or nonconductive materials. This occurs by way of oscillating a transmit coil with an electro motive force at a resonant frequency thus creating an electromagnetic field. The magnetic field passes through a target of either conductive or nonconductive material and is then intercepted by a receive coil which likewise oscillates at a resonant frequency, which when in proximity to the transmit coil and transmit coils resonant frequency produces an enhanced signal by way of the interaction of the respective resonant frequencies and receive coil output.

Ferromagnetic Group III-V semiconductor/non-magnetic Group III-V semiconductor heterojunctions, with a magnetodiode device, to detect heterojunction magnetoresistance responsive to an applied magnetic field.

Systems and methods include determining energy usage of a residence from a current that flows through a first main conductor and a second main conductor that transport the current into the residence. Embodiments of the present disclosure relate to sensors (130a-b) that monitor magnetic fields (150a-b) generated by the first and second main conductors (120a-b). After a resistive load (210a-b) is added for an electrical path in the residence, the first and second magnetic fields (150a-b) may be converted to generate first and second calibrating currents. A first prototype current is corrected to eliminate the influence of the second magnetic field (150b) onto the first magnetic field (150a) and a second prototype current is corrected to eliminate the influence of the first magnetic field (150a) onto the second magnetic field (150b). The energy usage of the residence is determined from the corrected currents.

A method for determining a two-dimensional spectrum of a specified carrier having a specified mobility and density in a material of an electronic device, the method including performing a magnetic field-dependent Hall measurement on the material of the electronic device; determining, using the magnetic field-dependent Hall measurement, a probability density function of a conductance of the material of the electronic device, wherein the probability density function describes a spectrum of a plurality of m-carriers, wherein the plurality of m-carriers includes the specified carrier having the specified mobility and density; and determining an electrical transport of a plurality of electrons and holes inside the material of the electronic device by observing a variation of the probability density function with any of the specified mobility and density of the specified carrier.

A magnetic field detecting sensor includes a bridge circuit which is connected to multiple magnetoresistive effect elements and is capable of outputting a differential voltage between specified connection points, a magnetic field generating conductor for providing the magnetoresistive effect elements with a magnetic field in a direction opposite to that of the detection magnetic field by disposing a magnetic body near the center of the bridge circuit, a differential operation circuit which the differential voltage is input in and makes a feedback current flow to the magnetic field generating conductor, wherein the feedback current generates the magnetic field in a direction opposite to that of the detection magnetic field in the magnetic field generating conductor, and a voltage converting circuit for outputting the feedback current as a voltage value. The magnetic field generating conductor and the magnetoresistive effect elements are formed in the same stacked body.

The invention relates to method for determining respective transport properties of majority as well as minority charge carriers in a sample (107) comprising the majority and the minority charge carriers that correspond to electrons and holes or vice versa. The method particularly allows to determine the charge carrier density of the majority charge carriers and the charge carrier density of the minority charge carriers. For the method, a plurality of Hall measurement trials is performed on the sample (107), wherein during each Hall measurement trial, the sample (107) is exposed to an illumination intensity I, wherein a Hall coefficient and a conductivity are acquired from each Hall measurement trial, wherein in a first Hall measurement trial, the sample (107) is exposed to a first illumination intensity I.sub.1, in the range of zero to 0.02 suns, particularly wherein the first illumination intensity is zero, and a first Hall coefficient R.sub.H(I.sub.1) and a first conductivity ?(I.sub.1) are acquired, wherein from the first Hall coefficient and the first conductivity, a carrier mobility ?.sub.1 is determined, wherein in a second measurement trial, the sample (107) is exposed to a second illumination intensity I.sub.2 and a second Hall coefficient R.sub.H(I.sub.2) and a second conductivity ?(I.sub.2) are acquired, wherein from the second Hall coefficient and the second conductivity, a second carrier mobility ?.sub.2 is determined, wherein the second illumination intensity I.sub.2 is so high that a charge carrier density of electrons and a charge carrier density of holes in the sample (107) are identical, that the second Hall coefficient asymptotically approaches zero and that a second Hall mobility obtained from the product of the second Hall coefficient and the second conductivity asymptotically approaches a constant value, wherein a third carrier mobility ?.sub.3 is determined from the first and the second carrier mobility, particularly by subtracting the second carrier mobility from the first carrier mobility if the Hall coefficient has the same sign for the first and the second illumination intensity or by adding the second carrier mobility to the first carrier mobility if the Hall coefficient changes its sign for the first and the second illumination intensity, wherein the first carrier mobility ?.sub.1 is assigned to, particularly corresponds to a mobility of the majority charge carriers, ?.sub.2 is assigned to, particularly corresponds the absolute value of the difference between hole and electron mobility, and the third carrier mobility ?.sub.3 is assigned to, particularly corresponds to a mobility o

A control device configured to communicate with a first projector which projects a first image in a first projection area, and a second projector which projects a second image in a second projection area having a first overlap area overlapping the first projection area to make the first projector and the second projector perform an edge blending process includes a reception section for receiving input of designation information including a direction in which an overlap width, a generation section for generating first overlap information including information representing first side in the first overlap area and information representing the overlap width of the first overlap area, and second overlap information including information representing second side in the first overlap area and the information, and a transmission section for transmitting the first overlap information to the first projector, and the second overlap information to the second projector.

Ferromagnetic Group III-V semiconductor/non-magnetic Group III-V semiconductor heterojunctions, with a magnetodiode device, to detect heterojunction magnetoresistance responsive to an applied magnetic field.

Ferromagnetic Group III-V semiconductor/non-magnetic Group III-V semiconductor heterojunctions, with a magnetodiode device, to detect heterojunction magnetoresistance responsive to an applied magnetic field.