Embodiments of the present disclosure generally relate to spintronic devices, and more specifically to self-cooling spintronic devices. In an embodiment, a device is provided. The device includes a spintronic device having a first side and a second side opposite the first side, a first layer disposed on the first side, and a second layer disposed on the second side, the first layer having a Seebeck coefficient that is different from a Seebeck coefficient of the second layer.

A magnetic sensor includes a first insulating layer, a second insulating layer, a third insulating layer, a lower coil element located on an opposite side of the first insulating layer from the second insulating layer, and a second MR element. The second MR element includes a magnetization pinned layer and a free layer. The magnetization pinned layer and the free layer are located on an opposite side of the third insulating layer from the second insulating layer. The first and third insulating layers each contain a first insulating material. The second insulating layer contains a second insulating material.

A spin-orbit torque (SOT) measuring apparatus includes a photoelastic modulator (PEM) configured to periodically modulate a polarization direction of linearly polarized incident light and emit a periodically modulated light, a first polarization rotator configured to rotate a polarization direction of the periodically modulated light, a voltage generator configured to generate an AC current to a sample to which light with the rotated polarization direction is to be emitted, a prism configured to split light reflected into first light and second light having different polarization directions, a balanced detector configured to output a signal corresponding to an intensity difference between the first light and the second light, a changing circuit configured to change a frequency component to the intensity difference, and an amplitude measurer configured to measure an amplitude of a frequency component corresponding to a modulation frequency of the PEM with the changed frequency component.

The present disclosure relates to integrated circuits, and, more particularly, to a magnetic field sensor using magnetic tunneling junction (MTJ) structures and passive resistors, and methods of manufacture and operation. The structure includes: a first portion of a circuit including a first MTJ structure and a first resistor coupled in series between a first voltage source and a second voltage source; and a second portion of the circuit including a second MTJ structure and a second resistor coupled in series between the first voltage source and the second voltage source. The first portion and the second portion are coupled in parallel between the first voltage source and the second voltage source.

The present application describes a waveform processor for control of quantum mechanical systems. The waveform processor may be used to control quantum systems used in quantum computation, such as qubits. According to some embodiments, a waveform processor includes a first sequencer configured to sequentially execute master instructions according to a defined order and output digital values in response to the executed master instructions, and a second sequencer coupled to the first sequencer and configured to generate analog waveforms at least in part by transforming digital waveforms according to digital values received from the first sequencer. The analog waveforms are applied to a quantum system. In some embodiments, the waveform processor further includes a waveform analyzer configured to integrate analog waveforms received from a quantum system and output results of said integration to the first sequencer.

In one aspect, a linear sensor includes at least one magnetoresistance element that includes a first spin valve and a second spin valve positioned on the first spin valve. The first spin valve includes a first set of reference layers having a magnetization direction in a first direction and a first set of free layers having a magnetization direction in a second direction orthogonal to the first direction. The second spin valve includes a second set of reference layers having a magnetization direction in the first direction and a second set of free layers having a magnetization direction in a third direction orthogonal to the first direction and antiparallel to the second direction. The first direction is neither parallel nor antiparallel to a direction of an expected magnetic field.

A spin element includes an element portion including a first ferromagnetic layer, a conducting portion that extends in a first direction as viewed in a lamination direction of the first ferromagnetic layer and faces the first ferromagnetic layer, and a current path extending from the conducting portion to a semiconductor circuit and having a resistance adjusting portion between the conducting portion and the semiconductor circuit, wherein the resistance value of the resistance adjusting portion is higher than the resistance value of the conducting portion, and the temperature coefficient of the volume resistivity of a material forming the resistance adjusting portion is lower than the temperature coefficient of the volume resistivity of a material forming the conducting portion.

A traffic monitoring system includes an electron spin defect magnetometer in a vicinity of a roadway, the electron spin defect magnetometer configured to detect magnetic field signals induced by transit entities in the vicinity of the roadway. The electron spin defect magnetometer includes an electron spin defect body including a plurality of lattice point defects, an optical source arranged to excite the plurality of lattice point defects, and a photodetector arranged to receive photoluminescence emitted by the plurality of lattice point defects.

In one aspect, a linear sensor includes at least one magnetoresistance element that includes a first spin valve and a second spin valve positioned on the first spin valve. The first spin valve includes a first set of reference layers having a magnetization direction in a first direction and a first set of free layers having a magnetization direction in a second direction orthogonal to the first direction. The second spin valve includes a second set of reference layers having a magnetization direction in the first direction and a second set of free layers having a magnetization direction in a third direction orthogonal to the first direction and antiparallel to the second direction. The first direction is neither parallel nor antiparallel to a direction of an expected magnetic field.

A method for quantum spin amplification includes spin-polarizing an ensemble of quantum spins in an initial spin state to generate a transversely-polarized sensing spin state. The quantum spins identically have an upper energy state and a lower energy state. The sensing spin state accumulates a phase shift that transforms the sensing spin state into a phase-accumulated spin state having first and second transverse polarization components. The phase-accumulated spin state is transformed into an intermediate spin state by rotating the first transverse polarization component into a longitudinal polarization component of the intermediate spin state. The ensemble is then coupled to an auxiliary mode, during which the intermediate spin state evolves such that the second transverse polarization component is amplified into an amplified transverse polarization. This amplified transverse polarization is then measured.