Patent classifications
G01R33/1284
HIGH-FREQUENCY MAGNETIC FIELD GENERATING DEVICE
A high-frequency magnetic field generating device includes two coils arranged with a predetermined gap in parallel with each other, the two coils (a) in between which electron spin resonance material is arranged or (b) arranged at one side from electron spin resonance material; a high-frequency power supply that generates microwave current that flows in the two coils; and a transmission line part connected to the two coils, that sets a current distribution so as to locate the two coils at positions other than a node of a stationary wave.
System and method for cryogenic hybrid technology computing and memory
A system and method for high-speed, low-power cryogenic computing are presented, comprising ultrafast energy-efficient RSFQ superconducting computing circuits, and hybrid magnetic/superconducting memory arrays and interface circuits, operating together in the same cryogenic environment. An arithmetic logic unit and register file with an ultrafast asynchronous wave-pipelined datapath is also provided. The superconducting circuits may comprise inductive elements fabricated using both a high-inductance layer and a low-inductance layer. The memory cells may comprise superconducting tunnel junctions that incorporate magnetic layers. Alternatively, the memory cells may comprise superconducting spin transfer magnetic devices (such as orthogonal spin transfer and spin-Hall effect devices). Together, these technologies may enable the production of an advanced superconducting computer that operates at clock speeds up to 100 GHz.
Quantum sensor based on rare-earth-ion doped optical crystal and use thereof
Provided is a quantum sensor based on a rare-earth-ion doped optical crystal, having: a rare-earth-ion doped optical crystal; a low temperature providing unit, which provides a low temperature operating environment to the rare-earth-ion doped optical crystal; a constant magnetic field generation unit, which applies a constant magnetic field to the rare-earth-ion doped optical crystal; a light field generation unit, which provides a light field performing optical pumping on the rare-earth-ion doped optical crystal to prepare the rare-earth-ions in an initial spin state, and a light field for exciting Raman scattering of the rare-earth-ion doped optical crystal; a pulsed magnetic field generation unit, which applies a pulsed magnetic field perpendicular to the constant magnetic field to the rare-earth-ion doped optical crystal to make the rare-earth-ion doped optical crystal generate a spin echo; and a heterodyne Raman scattering light field detection and analysis unit, which detects and analyzes a Raman scattering light field radiated from the rare-earth-ion doped optical crystal. Further provided are uses of this quantum sensor for magnetic field sensing and electric field sensing as well as a sensing method.
SPIN ELEMENT AND MAGNETIC MEMORY
A spin element includes an element portion including a first ferromagnetic layer, a conducting portion that extends in a first direction as viewed in a lamination direction of the first ferromagnetic layer and faces the first ferromagnetic layer, and a current path extending from the conducting portion to a semiconductor circuit and having a resistance adjusting portion between the conducting portion and the semiconductor circuit, wherein the resistance value of the resistance adjusting portion is higher than the resistance value of the conducting portion, and the temperature coefficient of the volume resistivity of a material forming the resistance adjusting portion is lower than the temperature coefficient of the volume resistivity of a material forming the conducting portion.
Ferrimagnetic Oscillator Magnetometer
Ferrimagnetic oscillator magnetometers do not use lasers to stimulate fluorescence emission from defect centers in solid-state hosts (e.g., nitrogen vacancies in diamonds). Instead, in a ferrimagnetic oscillator magnetometer, the applied magnetic field shifts the resonance of entangled electronic spins in a ferrimagnetic crystal. These spins are entangled and can have an ensemble resonance linewidth of approximately 370 kHz to 10 MHz. The resonance shift produces microwave sidebands with amplitudes proportional to the magnetic field strength at frequencies proportional to the magnetic field oscillation frequency. These sidebands can be coherently averaged, digitized, and coherently processed, yielding magnetic field measurements with sensitivities possibly approaching the spin projection limit of 1 attotesla/√{square root over (Hz)}. The encoding of magnetic signals in frequency rather than amplitude relaxes or removes otherwise stringent requires on the digitizer.
MAGNETORESISTANCE EFFECT ELEMENT
A magnetoresistance effect element includes a underlayer, a protective layer, a laminated body located between the underlayer and the protective layer and including a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer in order from a side closest to the underlayer, and an intermediate layer located between the underlayer and the first ferromagnetic layer, or between the second ferromagnetic layer and the protective layer, wherein, one ferromagnetic layer selected from the first ferromagnetic layer and the second ferromagnetic layer and be in contact with the intermediate layer is a Heusler alloy having a Co basis, and a main component of the intermediate layer is an element other than Co among elements constituting the Heusler alloy having the Co basis.
Fabricating planarized coil layer in contact with magnetoresistance element
In one aspect, a method includes forming a coil in a coil layer, performing planarization on the coil layer, and depositing a magnetoresistance (MR) element on the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element. In another aspect, a magnetic field sensor includes a substrate, a planarized coil layer comprising a coil on the substrate, a magnetoresistance (MR) element in contact with the planarized coil layer, and a capping layer deposited over the MR element and the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element.
SPIN TORQUE OSCILLATOR (STO) SENSORS USED IN NUCLEIC ACID SEQUENCING ARRAYS AND DETECTION SCHEMES FOR NUCLEIC ACID SEQUENCING
Disclosed herein are methods and apparatuses for sequencing nucleic acids using a detection device, the detection device comprising a plurality of spin torque oscillators (STOs) and at least one fluidic channel. In some embodiments of a method, a nucleotide precursor is labeled with a magnetic nanoparticle (MNP), and the labeled nucleotide precursor is added to the fluidic channel of the detection device. It is determined whether at least one of the plurality of STOs is generating a signal. Based at least in part on the determination of whether the at least one of the plurality of STOs is generating the signal, it is determined whether the labeled nucleotide precursor has been detected.
Magnetic Tunnel Junction Devices
In an embodiment, a device includes: a magnetoresistive random access memory cell including: a bottom electrode; a reference layer over the bottom electrode; a tunnel barrier layer over the reference layer, the tunnel barrier layer including a first composition of magnesium and oxygen; a free layer over the tunnel barrier layer, the free layer having a lesser coercivity than the reference layer; a cap layer over the free layer, the cap layer including a second composition of magnesium and oxygen, the second composition of magnesium and oxygen having a greater atomic concentration of oxygen and a lesser atomic concentration of magnesium than the first composition of magnesium and oxygen; and a top electrode over the cap layer.
Ferrimagnetic oscillator magnetometer
Ferrimagnetic oscillator magnetometers do not use lasers to stimulate fluorescence emission from defect centers in solid-state hosts (e.g., nitrogen vacancies in diamonds). Instead, in a ferrimagnetic oscillator magnetometer, the applied magnetic field shifts the resonance of entangled electronic spins in a ferrimagnetic crystal. These spins are entangled and can have an ensemble resonance linewidth of approximately 370 kHz to 10 MHz. The resonance shift produces microwave sidebands with amplitudes proportional to the magnetic field strength at frequencies proportional to the magnetic field oscillation frequency. These sidebands can be coherently averaged, digitized, and coherently processed, yielding magnetic field measurements with sensitivities possibly approaching the spin projection limit of 1 attotesla/√{square root over (Hz)}. The encoding of magnetic signals in frequency rather than amplitude relaxes or removes otherwise stringent requires on the digitizer.