Patent classifications
G01R33/1284
CHIRALITY DETECTION DEVICE, CHIRALITY DETECTION METHOD, SEPARATION DEVICE, SEPARATION METHOD, AND CHIRAL SUBSTANCE DEVICE
A chirality detector of the present invention for detecting chirality of chiral material, includes: a first electrode and a second electrode that are configured to apply a voltage to a subject containing the chiral material; a spin detection layer configured to be in contact with the subject; a power supply; and a control section. The power supply and the control section are configured to generate an electric field at the subject by applying the voltage between the first electrode and the second electrode. The control section is configured to detect a voltage generated in the spin detection layer in a direction that goes across a direction of the electric field or a voltage generated between the spin detection layer and the subject, and also is configured to detect chirality of the chiral material on the basis of the detected voltage.
LINEAR SENSOR WITH DUAL SPIN VALVE ELEMENT HAVING REFERENCE LAYERS WITH MAGNETIZATION DIRECTIONS DIFFERENT FROM AN EXTERNAL MAGNETIC FIELD DIRECTION
In one aspect, a linear sensor includes at least one magnetoresistance element that includes a first spin valve and a second spin valve positioned on the first spin valve. The first spin valve includes a first set of reference layers having a magnetization direction in a first direction and a first set of free layers having a magnetization direction in a second direction orthogonal to the first direction. The second spin valve includes a second set of reference layers having a magnetization direction in the first direction and a second set of free layers having a magnetization direction in a third direction orthogonal to the first direction and antiparallel to the second direction. The first direction is neither parallel nor antiparallel to a direction of an expected magnetic field.
NANOSCALE STRAIN ENGINEERING OF GRAPHENE DEVICES WITH TUNEABLE ELECTRONIC CORRELATION FOR QUANTUM VALLEYTRONICS AND SPINTRONICS
A strain engineered material including a monolayer graphene sheet comprising an array of wrinkles induced by deformations in the graphene sheet, the deformations formed by a lattice of underlying nanostructures on a substrate. The lattice of nanostructures comprises rows of the nanostructures and each of the wrinkles comprise a ridge aligned on top of a different one of the rows and along an alignment direction defined by the rows. The deformations pattern a strain distribution in the graphene sheet that induces a periodically varying pseudo magnetic field distribution ranging between a positive value and a negative values, The periodically varying pseudo magnetic field distribution has field magnitude minima located parallel to and between the ridges and field magnitude maxima located near to and parallel to each of the ridges and can be designed for various valleytronic and spintronic device applications.
Scanning sensor having a spin defect
A sensor device includes a carrier, a force feedback sensor, and a probe containing a spin defect, the probe being connected to the force feedback sensor either directly or indirectly via a handle structure. In order to couple the spin defect to a microwave field in an efficient and robust manner, the sensor device includes an integrated microwave antenna arranged at a distance of less than 500 micrometers from the spin defect. The sensor device can be configured as a self-contained exchangeable cartridge that can easily be mounted in a sensor mount of a scanning probe microscope.
Spin element and magnetic memory
A spin element includes an element portion including a first ferromagnetic layer, a conducting portion that extends in a first direction as viewed in a lamination direction of the first ferromagnetic layer and faces the first ferromagnetic layer, and a current path extending from the conducting portion to a semiconductor circuit and having a resistance adjusting portion between the conducting portion and the semiconductor circuit, wherein the resistance value of the resistance adjusting portion is higher than the resistance value of the conducting portion, and the temperature coefficient of the volume resistivity of a material forming the resistance adjusting portion is lower than the temperature coefficient of the volume resistivity of a material forming the conducting portion.
Sensor with magnetic shield
A magnetic sensor is disclosed. The magnetic sensor can include a sensing element and a magnetic shield. The sensing element and the magnetic shield can be vertically stacked with one another. The magnetic shield can be a magnetic shield plate that includes ferromagnetic portions spaced laterally by a non-ferromagnetic material. The sensing element can have a first side and a second side opposite the first side. The magnetic shield that can be vertically stacked over the first side of the sensing element. The magnetic shield can be spaced apart from the sensing element by an isolation layer. A passivation layer can cover at least a portion of the sensing element or the magnetic shield. The sensing element can be configured to sense a magnetic field property of a magnetic field source that is positioned on the second side of the sensing element.
Magnetic field sensor using acoustically driven ferromagnetic resonance
An acoustically driven ferromagnetic resonance (ADFMR) device includes a piezoelectric element, a pair of transducers arranged to activate the piezoelectric element to generate an acoustic wave, a magnetostrictive element arranged to receive the acoustic wave, and a readout circuit to detect one of either a change in the magnetostrictive element or a change in the acoustic wave.
Quantum spin magnetometer
This disclosure relates to a magnetometer for measuring a magnetic field. The magnetometer comprises a solid state quantum system with at least two quantum spin states. A control signal generator sets the quantum system into a quantum state that accumulates a phase over time depending on the magnetic field. A detector measures a signal from the quantum system indicative of the accumulated phase at a measurement time after the setting of the quantum state. A processor determines a magnetic field measurement based on the signal measured by the detector. Importantly, the quantum system is mounted on a rotator that is configured to rotate the quantum system about a rotation axis that defines an angle with the direction of the magnetic field and at a rotation rate that modulates the magnetic field over the measurement time.
APPARATUS AND METHOD FOR CONTROL OF AN ELECTROPERMANENT MAGNETIC SYSTEM
An apparatus and method are provided for implementing feedback control of the electropermanent magnets and also collecting information about magnetic fields emanating from a volume of interest containing a living being
Sensitive component for device for measuring electromagnetic field by thermofluorescence, corresponding measurement and manufacturing methods
A component sensitive to an electromagnetic field, which includes a first absorbent material, able to partially absorb energy of a given electromagnetic field and converting the absorbed energy into heat. The sensitive component includes a second fluorescent and thermosensitive material, placed in contact with the first material in order to store the heat converted by the first material. The second material is able to re-emit, under the action of a predetermined excitation light, a light by fluorescence with light intensity dependent on the stored heat.